Revision Date: 3/23/2012
New Product
NPN Power Silicon Transistor
2N5240
Maximum Ratings (TA= 25 °C)
Features
• High Voltage: Vceo(sus) = 300 V (min)
• Wide Area of Safe Operation
• Designed for use in series regulators, power
amplifiers, inverters, deflection circuits, switching
regulators, and high-voltage bridge amplifiers.
• TO-3 (TO-204AA) Package
Ratings Symbol Value Units
Collector - Base Voltage VCBO 375 Vdc
Collector - Emitter Voltage (RBE < 50 Ω)V
CER(sus) 350 Vdc
Collector - Emitter Voltage VCE0(sus) 300 Vdc
Emitter - Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC5Adc
Base Current IB2Adc
Collector Power Dissipation PC100 W
Junction Temperature TJ+200 °C
Storage Temperature Range Tstg -65 to +200 °C
Electrical Characteristics
TC = 25°C unless otherwise specified
Symbol Parameter Conditions Mimimum Typical Maximum Units
VCEO(SUS) Collector-Emitter Sustaining Voltage lC= 0.2 A; IB= 0 300 -- -- V
VCEO(SUS) Collector-Emitter Sustaining Voltage lC= 0.2 A; RBE < 50 Ω350 -- -- V
V(BR)EBO Emitter-Base Breakdown Voltage lE= 0.02 A; lC= 0 6 -- -- V
VCE(sat)-1 Collector-Emitter Saturation Voltage lC= 2 A; 18 = 0.25 A -- -- 2.5 V
VCE(sat)-2 Collector-Emitter Saturation Voltage lC= 4.5 A; IB = 1.125 A -- -- 5.0 V
VBE(on) Base-Emitter On Voltage lC= 2 A; VCE = 10 V -- -- 3.0 V
lCEV Collector Cutoff Current VBE = 375 V; VBE = -1.5 V -- -- 2 mA
VBE = 300 V; VBE = -1.5V; TC= 150°C -- -- 3
ICEO Collector Cutoff Current VBE = 200 V; IB= 0 -- -- 2 mA
lESO Emitter Cutoff Current VBE = 6 V; lC= 0 -- -- 5 mA
IS/B Forward Bias, Second Breakdown tp=1 sec, VCE =100 Vdc 80 -- -- A
Collector Current
hfe AC Forward Current Transfer Ratio F = 1 KHz; VCE = 10 Vdc, lC= 0.4 A 20 -- --
hFe-1 DC Current Gain lC= 0.4 A; VCE = 10 V 20 -- 80
hFe-2 DC Current Gain lC= 2 A; VCE = 10 V 20 -- 80
hFe-3 DC Current Gain lC= 4.5 A; VCE = 10 V 5 -- --
fTCurrent-Gain - Bandwidth Product lC= 0.2 A; VCE = 10 V 2 -- -- MHz
COB Output Capacitance lE= 0; VCB = 10 V; ftest = 1.0 MHz -- -- 250 pF