SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
1 Version: T2005
400W, 5V - 188V Surface Mount Transient Voltage Suppressor
FEATURES
● Ideal for automated placement
● Glass passivated junction
● Excellent clamping capability
● Fast response time: Typically less than
1.0ps from 0 V to BV min
● Typical IR less than 1μA above 10V
● Moisture sensitivity level: level 1, per J-STD-020
● AEC-Q101 qualified available:
ordering code with suffix “H”
● 400 W peak pulse power capability with a 10 / 1000 μs
waveform(300W above 78V)
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: DO-214AC (SMA)
● Molding compound meets UL 94V-0 flammability rating
● Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Weight: 0.060 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
VWM
5 - 188
V
VBR
6.4 - 255
V
PPPM
tp = 10/1000 μs waveform
400
W
TJ MAX
150
°C
Package
DO-214AC (SMA)
Configuration
Single die
DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
SYMBOL
VALUE
UNIT
PPK
400
W
PD
1
W
IFSM
40
A
VF
3.5
V
TJ
-55 to +150
°C
TSTG
-55 to +150
°C
Note:
1. Non-repetitive current pulse per Fig. 3 and derated above TA = 25°C per Fig. 2
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types SMAJ5.0 - Types SMAJ188
2. Electrical characteristics apply in both directions
SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
2 Version: T2005
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Part number
Marking
code
Breakdown
voltage
VBR@IT (1)
(V)
Test
current
IT
(mA)
Working
stand-off
voltage
VWM
(V)
Maximum reverse
leakage current
IR@VWM (1) (µA)
Maximum peak
impulse current
IPPM (A) (2)
Maximum clamping
voltage
VC@IPPM (V) (2)
Min.
Max.
SMAJ5.0
AD
6.4
7.30
10
5
800
41.7
9.6
SMAJ5.0A
AE
6.4
7.00
10
5
800
43.5
9.2
SMAJ6.0
AF
6.67
8.15
10
6
800
35.1
11.4
SMAJ6.0A
AG
6.67
7.37
10
6
800
38.8
10.3
SMAJ6.5
AH
7.22
8.82
10
6.5
500
32.5
12.3
SMAJ6.5A
AK
7.22
7.98
10
6.5
500
35.7
11.2
SMAJ7.0
AL
7.78
9.51
10
7
200
30.1
13.3
SMAJ7.0A
AM
7.78
8.60
10
7
200
33.3
12.0
SMAJ7.5
AN
8.33
10.30
1
7.5
100
28.0
14.3
SMAJ7.5A
AP
8.33
9.21
1
7.5
100
31.0
12.9
SMAJ8.0
AQ
8.89
10.90
1
8
50
26.7
15.0
SMAJ8.0A
AR
8.89
9.83
1
8
50
29.4
13.6
SMAJ8.5
AS
9.44
11.50
1
8.5
10
25.2
15.9
SMAJ8.5A
AT
9.44
10.40
1
8.5
10
27.8
14.4
SMAJ9.0
AU
10.0
12.20
1
9
5
23.7
16.9
SMAJ9.0A
AV
10.0
11.10
1
9
5
26.0
15.4
SMAJ10
AW
11.1
13.60
1
10
5
21.3
18.8
SMAJ10A
AX
11.1
12.30
1
10
5
23.5
17.0
SMAJ11
AY
12.2
14.90
1
11
1
19.9
20.1
SMAJ11A
AZ
12.2
13.50
1
11
1
22.0
18.2
SMAJ12
BD
13.3
16.30
1
12
1
18.2
22.0
SMAJ12A
BE
13.3
14.70
1
12
1
20.1
19.9
SMAJ13
BF
14.4
17.60
1
13
1
16.8
23.8
SMAJ13A
BG
14.4
15.90
1
13
1
18.6
21.5
SMAJ14
BH
15.6
19.10
1
14
1
15.5
25.8
SMAJ14A
BK
15.6
17.20
1
14
1
17.2
23.2
SMAJ15
BL
16.7
20.40
1
15
1
14.9
26.9
SMAJ15A
BM
16.7
18.50
1
15
1
16.4
24.4
SMAJ16
BN
17.8
21.80
1
16
1
13.9
28.8
SMAJ16A
BP
17.8
19.70
1
16
1
15.4
26.0
SMAJ17
BQ
18.9
23.10
1
17
1
13.1
30.5
SMAJ17A
BR
18.9
20.90
1
17
1
14.5
27.6
SMAJ18
BS
20.0
24.40
1
18
1
12.4
32.2
SMAJ18A
BT
20.0
22.10
1
18
1
13.7
29.2
SMAJ20
BU
22.2
27.10
1
20
1
11.2
35.8
SMAJ20A
BV
22.2
24.50
1
20
1
12.3
32.4
SMAJ22
BW
24.4
29.80
1
22
1
10.2
39.4
SMAJ22A
BX
24.4
26.90
1
22
1
11.3
35.5
SMAJ24
BY
26.7
32.60
1
24
1
9.3
43.0
SMAJ24A
BZ
26.7
29.50
1
24
1
10.3
38.9
SMAJ26
CD
28.9
35.30
1
26
1
8.6
46.6
SMAJ26A
CE
28.9
31.90
1
26
1
9.5
42.1
SMAJ28
CF
31.1
38.00
1
28
1
8.0
50.0
SMAJ28A
CG
31.1
34.40
1
28
1
8.8
45.4
SMAJ30
CH
33.3
40.7
1
30
1
7.5
53.5
SMAJ30A
CK
33.3
36.8
1
30
1
8.3
48.4
SMAJ33
CL
36.7
44.9
1
33
1
6.8
59.0
SMAJ33A
CM
36.7
40.6
1
33
1
7.5
53.3
SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
3 Version: T2005
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Part number
Marking
code
Breakdown
voltage
VBR@IT (1)
(V)
Test
current
IT
(mA)
Working
stand-off
voltage
VWM
(V)
Maximum reverse
leakage current
IR@VWM (1) (µA)
Maximum peak
impulse current
IPPM (A) (2)
Maximum clamping
voltage
VC@IPPM (V) (2)
Min.
Max.
SMAJ36
CN
40.0
48.9
1
36
1
6.2
64.3
SMAJ36A
CP
40.0
44.2
1
36
1
6.9
58.1
SMAJ40
CQ
44.4
54.3
1
40
1
5.6
71.4
SMAJ40A
CR
44.4
49.1
1
40
1
6.2
64.5
SMAJ43
CS
47.8
58.4
1
43
1
5.2
76.7
SMAJ43A
CT
47.8
52.8
1
43
1
5.8
69.4
SMAJ45
CU
50.0
61.1
1
45
1
5.0
80.3
SMAJ45A
CV
50.0
55.3
1
45
1
5.5
72.7
SMAJ48
CW
53.3
65.1
1
48
1
4.7
85.5
SMAJ48A
CX
53.3
58.9
1
48
1
5.2
77.4
SMAJ51
CY
56.7
69.3
1
51
1
4.4
91.1
SMAJ51A
CZ
56.7
62.7
1
51
1
4.9
82.4
SMAJ54
RD
60.0
73.3
1
54
1
4.2
96.3
SMAJ54A
RE
60.0
66.3
1
54
1
4.6
87.1
SMAJ58
RF
64.4
78.7
1
58
1
3.9
103
SMAJ58A
RG
64.4
71.2
1
58
1
4.3
93.6
SMAJ60
RH
66.7
81.5
1
60
1
3.7
107
SMAJ60A
RK
66.7
73.7
1
60
1
4.1
96.8
SMAJ64
RL
71.1
86.9
1
64
1
3.5
114
SMAJ64A
RM
71.1
78.6
1
64
1
3.9
103
SMAJ70
RN
77.8
95.1
1
70
1
3.2
125
SMAJ70A
RP
77.8
86
1
70
1
3.5
113
SMAJ75
RQ
83.3
102
1
75
1
3.0
134
SMAJ75A
RR
83.3
92.1
1
75
1
3.3
121
SMAJ78
RS
86.7
106
1
78
1
2.9
139
SMAJ78A
RT
86.7
95.8
1
78
1
3.2
126
SMAJ85
RU
94.4
115
1
85
1
2.0
151
SMAJ85A
RV
94.4
104
1
85
1
2.2
137
SMAJ90
RW
100
122
1
90
1
1.9
160
SMAJ90A
RX
100
111
1
90
1
2.1
146
SMAJ100
RY
111
136
1
100
1
1.7
179
SMAJ100A
RZ
111
123
1
100
1
1.9
162
SMAJ110
SD
122
149
1
110
1
1.6
196
SMAJ110A
SE
122
135
1
110
1
1.7
177
SMAJ120
SF
133
163
1
120
1
1.4
214
SMAJ120A
SG
133
147
1
120
1
1.6
193
SMAJ130
SH
144
176
1
130
1
1.3
231
SMAJ130A
SK
144
159
1
130
1
1.5
209
SMAJ150
SL
167
204
1
150
1
1.1
266
SMAJ150A
SM
167
185
1
150
1
1.3
243
SMAJ160
SN
178
218
1
160
1
1.0
287
SMAJ160A
SP
178
197
1
160
1
1.2
259
SMAJ170
SQ
189
231
1
170
1
1.0
304
SMAJ170A
SR
189
209
1
170
1
1.1
275
SMAJ188
ST
209
255
1
188
1
0.9
344
SMAJ188A
SS
209
231
1
188
1
0.9
328
Note:
1. Pulse test with PW=30 ms
2. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2
3. Peak pulse power waveform is 10/1000µs
4. For bi-directional devices having VR of 10 V and under, the IR limit is double.
SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
4 Version: T2005
ORDERING INFORMATION
ORDERING CODE
(Note 1,2,3)
PACKAGE
PACKING
SMAJxxxAHR3G
SMA
1,800 / 7” reel
SMAJxxxAHM2G
SMA
7,500 / 13” reel
SMAJxxxAHR3
SMA
1,800 / 7” reel
SMAJxxxAHM2
SMA
7,500 / 13” reel
SMAJxxxA R3G
SMA
1,800 / 7” reel
SMAJxxxA M2G
SMA
7,500 / 13” reel
SMAJxxxA R3
SMA
1,800 / 7” reel
SMAJxxxA M2
SMA
7,500 / 13” reel
SMAJxxxAHE3G
Clip SMA
1,800 / 7” reel
SMAJxxxAHE2G
Clip SMA
7,500 / 13” reel
SMAJxxxAHE3
Clip SMA
1,800 / 7” reel
SMAJxxxAHE2
Clip SMA
7,500 / 13” reel
SMAJxxxA E3G
Clip SMA
1,800 / 7” reel
SMAJxxxA E2G
Clip SMA
7,500 / 13” reel
SMAJxxxA E3
Clip SMA
1,800 / 7” reel
SMAJxxxA E2
Clip SMA
7,500 / 13” reel
SMAJxxxAHF3G
Folded SMA
1,800 / 7” reel
SMAJxxxAHF4G
Folded SMA
7,500 / 13” reel
SMAJxxxAHF3
Folded SMA
1,800 / 7” reel
SMAJxxxAHF4
Folded SMA
7,500 / 13” reel
SMAJxxxA F3G
Folded SMA
1,800 / 7” reel
SMAJxxxA F4G
Folded SMA
7,500 / 13” reel
SMAJxxxA F3
Folded SMA
1,800 / 7” reel
SMAJxxxA F4
Folded SMA
7,500 / 13” reel
Note 1:
"xxx" defines voltage from 5V (SMAJ5.0) to 188V (SMAJ188)
Note 2:
"H" means AEC-Q101 qualified
Note 3:
“G” means green compound (halogen free)
SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
5 Version: T2005
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve
Fig.2 Pulse Derating Curve
Fig.3 Clamping Power Pulse Waveform
Fig.4 Maximum Non-repetitive Forward Surge
Current
0.1
1
10
100
0.1 1 10 100 1000 10000
tp, PULSE WIDTH, (μs)
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
0
25
50
75
100
125
025 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3
t, TIME (ms)
td
Peak value
IPPM
Rise time tr=10μs to 100% of IPPM
Half value-IPPM/2
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10/1000μs, waveform
0
10
20
30
40
50
110 100
NUMBER OF CYCLES AT 60 Hz
8.3ms single half sine wave
IFSM, PEAK FORWARD SURGE CURRENT (A)
PEAK PULSE CURRENT (%)
PPPM, PEAK PULSE POWER, KW
PEAK PULSE POWER(PPP) OR CURRENT (IPP)
DERATING IN PERCENTAGE (%)
SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
6 Version: T2005
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Typical Junction Capacitance
V(BR), BREAKDOWN VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
A
10
100
1000
10000
110 100
f=1.0MHz
Vsig=50mVp-p
MEASURED AT
ZERO BIAS
MEASURED at
STAND-OFF
VOLTAGE,Vwm
SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
7 Version: T2005
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
SMA(1) Folded and ClipSMA(1)
P/N = Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
Note(1): Cathode band for unidirectional products only
SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
8 Version: T2005
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.