1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN2222
VN2224
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FET s are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Applications
❏Motor controls
❏Converters
❏Amplifiers
❏Switches
❏Power supply circuits
❏Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Features
❏Free from secondary breakdown
❏Low power drive requirement
❏Ease of paralleling
❏Low CISS and fast switching speeds
❏Excellent thermal stability
❏Integral Source-Drain diode
❏High input impedance and high gain
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Note: See Package Outline section for dimensions.
1
10
2
3
4
5
6
7
8
9
20
11
19
18
17
16
15
14
13
12
top view
TO-92
S G D
20-pin Ceramic DIP
Ordering Information Order Number / Package
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92 20-Pin C-Dip
220V 1.25Ω5.0A — VN2222NC
240V 1.25Ω5.0A VN2224N3 —
S
S
S
G1
G2
G3
G4
S
S
S
S
S
NC
D1
D2
D3
D4
NC
S
S
2
Symbol Parameter Min Typ Max Unit Conditions
BVDSS VV
GS = 0V, ID = 5mA
VGS(th) Gate Threshold Voltage 1.0 3.0 V VGS = VDS, ID = 5mA
∆VGS(th) Change in VGS(th) with Temperature -4 -5 mV/°CV
GS = VDS, ID = 5mA
IGSS Gate Body Leakage 1 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 50 µAV
GS = 0V, VDS = Max Rating
5mA V
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 2 VGS = 5V, VDS = 25V
510 V
GS = 10V, VDS = 25V
RDS(ON) 1.0 1.5 VGS = 5V, ID = 2A
0.9 1.25 VGS = 10V, ID = 2A
∆RDS(ON) Change in RDS(ON) with Temperature 1.0 1.4 %/°CV
GS = 10V, ID = 2A
GFS Forward Transconductance 1.0 2.2 VDS = 25V, ID = 2A
CISS Input Capacitance 300 350
COSS Common Source Output Capacitance 85 150 pF
CRSS Reverse Transfer Capacitance 20 35
td(ON) Turn-ON Delay Time 6 15
trRise Time 16 25
td(OFF) Turn-OFF Delay Time 65 90
tfFall Time 30 60
VSD Diode Forward Voltage Drop 0.8 1.0 V VGS = 0V, ISD = 100mA
trr Reverse Recovery Time 500 ns VGS = 0V, ISD = 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 540mA 5.0A 1.0W 125 170 540mA 5.0A
*ID (continuous) is limited by max rated Tj.
Thermal Characteristics
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Electrical Characteristics (@ 25°C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
A
VN2222/VN2224
Ω
Static Drain-to-Source
ON-State Resistance
Ω
VDD = 25V
ID = 2A
RGEN = 10Ω
VGS = 0V, VDS = 25V
f = 1 MHz
ns
VN2224 240
VN2222 220
3
Typical Performance Curves
VN2222/VN2224
Output Characteristics
10
8
6
4
2
0
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
10
8
6
4
2
0
V
DS
(volts)
Maximum Rated Safe Operating Area
1 100010010
10
1
0.1
0.01
0.001
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001 100.01 0.1 1
t
p
(seconds)
Transconductance vs. Drain Current
5
4
3
2
1
00105
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0 15010050
10
5
0
1257525
T
C
(°C)
P
D
(watts)
TO-92
T
C
= 25°C
P
D
= 1W
TO-92
T
A
= -55°C
V
DS
= 25V
0102030 5040
4V
3V
0246 108
V
GS
= 10V
6V
4V
3V
T
A
= 25°C
T
A
= 125°C
V
GS
= 10V
6V
8V
8V
TO-92 (DC)
TC = 25°C
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
VN2222/VN2224
Gate Drive Dynamic Characteristics
QG (nanocoulombs)
VGS (volts)
Tj (°C)
VGS(th) (normalized)
RDS(ON) (normalized)
V(th) and RDS Variation with Temperature
On-Resistance vs. Drain Current
RDS(ON) (ohms)
BVDSS (normalized)
Tj (°C)
Transfer Characteristics
VGS (volts)
ID (amperes)
Capacitance vs. Drain-to-Source Voltage
400
C (picofarads)
VDS (volts)
ID (amperes)
BVDSS Variation with Temperature
010203040
300
200
0
0246810
10
5
-50 0 50 100 150
1.1
1.0
5
2
1.4
1.0
0.4
10
8
6
4
2
0246810
-50 0 50 100 150
300 pF
VDS = 40V
VDS = 10V
V
GS
= 5V
V
GS
= 10V
T
A
= -55°C
V
DS
= 25V
125°C
0246 108
0
3
4
f = 1MHz
CISS
COSS
CRSS
0.9
733 pF
0.6
0.8
1.2
2.4
2.0
1.6
1.2
0.8
0.4
V
th
@ 5mA
25°C
0
100
0
1
R
DS
@ 10V, 2A
