Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363 1 June 28, 1999
Characteristics
T
A
=25°C
Parameters Sym Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V
F
— 1.2 1.5 V
I
F
=10 mA
Reverse Current
I
R
——10µA
V
R
=3.0 V
Capacitance
C
O
—50—pF
V
R
=0, f=1.0 MHz
Detector
Forward Blocking
Voltage
V
DM
400 — — V
R
GK
=10 K
Ω
T
A
=100°C
Id=150 µA
Reverse Blocking
Voltage
V
DM
400 — — V
On-state Voltage
V
t
— 1.1 1.3 V I
T
=300 mA
Holding Current
I
H
— — 500 µA R
GK
=27 K
Ω
V
FX
=50 V
Gate Trigger
Voltage
V
GT
— 0.6 1.0 V V
FX
=100 V
R
GK
=27 K
Ω
R
L
=10 K
Ω
Forward Leakage
Current
I
R
— 150 — µA R
GK
=10 K
Ω
V
RM
=400 V
I
F
=0,
T
A
=100°C
Reverse Leakage
Current
I
R
— 150 — µA R
GK
=10 K
Ω
V
RX
=400 V
I
F
=0,
T
A
=100°C
Gate Trigger Current
I
GT
—2050µA V
FX
=100 V
R
GK
=27 K
Ω
,
R
L
=10 K
Ω
Capacitance
Anode to Gate
Gate to Cathode
——
20
350
—
pF
pF
V=0, f=1.0 MHz
Package
Turn-0n Current
H11C4/H11C5
H11C6
I
FT
——
20
30
mA
mA
V
DM
=50 V
R
GK
=10 K
Ω
Turn-0n Current
H11C4/H11C5
H11C6
I
FT
—
5.0
7.0
11
14
mA
mA
V
DM
=100 V
R
GK
=27 K
Ω
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
Dimensions in Inches (mm)
1
2
3
6
5
4
Gate
Anode
Cathode
Anode
Cathode
NC
FEATURES
• Turn On Current (
I
FT
), 5.0 mA Typical
• Gate Trigger Current (
I
GT
), 20 mA Typical
• Surge Anode Current, 5.0 A
• Blocking Voltage, 400 V Gate T rigger V oltage
(
V
GT
), 0.6 V Typical
• Isolation V oltage, 5300 V
RMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
DESCRIPTION
The H11C4/H11C5/H11C6 are optically coupled
SCRs with a Gallium Arsenide infrared emitter and
a silicon photo SCR sensor. Switching can be
achieved while maintaining a high degree of isola-
tion between triggering and load circuits. These
optocouplers can be used in SCR triac and solid
state relay applications where high blocking volt-
ages and low input current sensitivity are required.
The H11C4 and H11C5 has a maximum turn-on-cur-
rent of 11 mA. The H11C6 has a maximum of 14 mA.
Maximum Ratings
Emitter
Peak Reverse Voltage ...................................... 6.0 V
Continuous Forward Current ..........................60 mA
Peak Forward Current (1.0 ms, 1% Duty Cycle).....3.0 A
Power Dissipation at 25°C........................... 100 mW
Derate Linearly from 25°C..................... 1.33 mW/°C
Detector
Reverse Gate Voltage....................................... 6.0 V
Anode Voltage (DC or AC Peak) .....................400 V
RMS Forward Current...................................300 mA
Surge Anode Current (10 ms duration)............5.0 A
Peak Forward Current (100 µs, 1% Duty Cycle)... 10 A
Surge Gate Current (5.0 ms duration)..........200 mA
Power Dissipation, 25°C case................... 1000 mW
Derate Linearly from 25°C..................... 13.3 mW/°C
Package
Isolation Test Voltage............................... 5300 V
RMS
(between emitter and detector referred to
Standard Climate23°C/50%RH, DIN 50014)
Creepage .............................................. min.7.0 mm
Clearance............................................. min. 7.0 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ....................... 175
Isolation Resistance
V
IO
=500 V,
T
A
=25°C................................
≥
1012
Ω
V
IO
=500 V,
T
A
=100°C..............................
≥
1011
Ω
Total Package Dissipation ........................... 400 mW
Derate Linearly from 25°C....................... 5.3 mW/°C
Operating Temperature Range......–55°C to +100°C
Storage Temperature Range .........–55°C to +150°C
Lead Soldering Time at 260°C ..................... 10 sec.
H11C4/H11C5/H11C6
Photo SCR Optocoupler
gy,,
