LITE-ON SEMICONDUCTOR 1N5817 thru 1N5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere SCHOTTKY BARRIER RECTIFIERS DO-41 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability The plastic material carries UL recognition 94V-0 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications A A B C D DO-41 MECHANICAL DATA Min. Dim. A Case : JEDEC DO-41 molded plastic Polarity : Color band denotes cathode Weight : 0.012 ounces, 0.34 grams Mounting position : Any 25.4 4.10 Max. - 5.20 B 0.71 0.86 C 2.00 2.70 D All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL 1N5817 1N5818 1N5819 UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward @TA=90 C Rectified Current VRRM VRMS VDC 20 14 20 30 21 30 40 28 40 V V Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC Method) V I(AV) 1.0 A IFSM 25 A Maximum forward Voltage at 1.0A DC VF 0.450 0.550 0.600 V Maximum forward Voltage at 3.0A DC VF 0.750 0.875 0.900 V Maximum DC Reverse Current at Rated DC Blocking Voltage IR 1 10 mA Typical Junction Capacitance (Note 1) CJ 110 pF Typical Thermal Resistance (Note 2) R0JA 80 C/W TJ -55 to +125 C TSTG -55 to +150 C Operating Temperature Range Storage Temperature Range @TJ=25 C @TJ=100 C NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermal Resistance Junction to Ambient. mA REV. 2, 01-Dec-2000, KDHC01 RATING AND CHARACTERISTIC CURVES 1N5817 thru 1N5819 0.8 0.6 0.4 0.2 0.1 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 20 40 60 80 100 120 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 1.0 40 30 20 10 Pulse width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 140 1 2 AMBIENT TEMPERATURE , C 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.3 - TYPICAL JUNCTION CAPACITANCE 10 INSTANTANEOUS FORWARD CURRENT ,(A) 100 CAPACITANCE , (pF) 5 100 TJ = 25 C, f= 1MHz 10 1 4 10 REVERSE VOLTAGE , VOLTS 100 1N5817 1N5818 1N5819 1.0 TJ = 25 C PULSE WIDTH 300us 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE , VOLTS REV. 2, 01-Dec-2000, KDHC01