NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
@T
A
=
90 C
1N5817 thru 1N5819
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wh eeling,and polarity protection applications
ME CHANICAL DATA
Case : JEDEC DO -41 m olded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECT RICAL CHARACTERISTICS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capa ci tive lo ad, der a te current by 20%
1N5818
30
21
30
1N5817
20
14
20
1N5819
40
28
40
Maximum Average Forward
Re ctified Cur r ent
Peak Forward Surge Current
8.3ms si ngle half sine-wave
super impo sed on rated load (JEDEC Method )
Maximum Re c urrent Pea k R everse Vo ltag e
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum f orwar d Voltage at 1.0A DC
1.0
25
0.450
T
J
Operating Temperature Range
-55 to +125 C
T
STG
Storage Tem peratu re Range
-55 to +150 C
Typical Therm al Resistance (Note 2)
R
0JA
80
C/W
C
J
Typical Junction Capacitance (Note 1)
110
pF
I
R
@T
J
=100 C
Maximum DC Reve rse Current
at Rated DC Blocking Voltage
@T
J
=25 C 1
10
mA
mA
V
A
A
V
UNIT
V
V
All Dimensions in millimete r
Max.
Mi n.
DO-41
Dim.
A
D
C
B 25. 4 5.2 0
-
4.10
0.7 1
2.0 0 2.70
0.8 6
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
Maximum f orward Voltage at 3.0A DC
V
F
0.550 0.600
0.900
0.875
0.750
V
SCHOTTKY BARRIER RECTIF IERS
REVERSE VOLTAGE -
20
to
40
Volts
FORWARD CURRENT -
1. 0
Ampere
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDHC01
RATING AND CHARAC TERISTIC CURVES
1N5817 thru 1N5819
INSTANTANEOUS FOR WARD CURRENT ,(A)
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FOR WARD CURRENT
AMPERES
20
60 80 100 120
0.6
0.1 40
0.2
1.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
AMBIENT TEMPERATURE , C
0.8
0.4
140
NUMB ER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
1 5 10 50 100220
0
10
20
30
40
Pulse width 8.3ms
Single Half-Sine-W ave
(J EDEC METHOD)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
IN STANTANEOUS F ORWARD VOLTAG E , VO LTS
0.2 0.4
0
0.1
1.0
10
0.6 0.8 1.0 1.2
TJ= 25 C
PULSE WIDTH 300us
1N5817
1N5818
1N5819
CA PACITAN CE , ( pF )
FIG.3 - TYPICAL JUNCTION CAPACITANCE
RE VE RS E VOLT AGE , VOLTS
10
1100
100
10
100
4
T
J
= 25 C, f= 1MHz
REV. 2, 01-Dec-2000, KDHC01