CM10AD00-24H - Mitsubishi Electric

Sep. 2000

MITSUBISHI IGBT MODULES

CM10AD00-24H

MEDIUM POWER SWITCHING USE

FLAT BASE, INSULATED TYPE

CM10AD00-24H

¡IC . ................................................................... 10A

¡VCES . ....................................................... 1200V

¡Insulated Type

¡CIB Module

3φ Inverter + 3φ Converter + Brake

Thyristor + Thermistor + Current shunt

resistor

APPLICATION

AC & DC motor controls, General purpose inverters

CIRCUIT DIAGRAM

GT

(sense terminal)

PPS

LABEL

GUP

EUP

GUN

U

GVP

EVP

GVN

V

GWP

EWP

GWN

W E

R

S

T

P1 P2 P

N1 N

TH1 TH2

B

GB

t=0.6

MAIN CIRCUIT TERMINAL

t=0.6

CONTROL CIRCUIT TERMINAL

P2

GT

GWN

GVN

GUN

ETH2 GBWVU

TH1

BTSR

GWP

EWP

GVP

EVP

GUP

EUP

P

N

N1P1

(1)

0.8

1

0.6

13

53

± 0.5

12 13

10 4

90

±0.3

56

18 18

55

100

90

±0.25

2.54

8888

2.54

88887.5

2.542.54 2.54

7.627.62

8888887.5

5

φ2.5

φ6

φ2.5

φ6

2-R5

2-φ4.5

±0.25

MOUNTING HOLES

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

http://store.iiic.cc/

Sep. 2000

MITSUBISHI IGBT MODULES

CM10AD00-24H

MEDIUM POWER SWITCHING USE

FLAT BASE, INSULATED TYPE

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

G-E Short

C-E Short

TC = 25°C

PULSE (Note. 2)

TC = 25°C

PULSE (Note. 2)

TC = 25°C

Symbol Parameter

Collector Current

Emitter Current

Conditions Unit

V

A

W

Rating

1200

±20

10

20

10

20

62

VCES

VGES

IC

ICM

IE (

Note.1

)

IEM (

Note.1

)

PC (

Note.3

)

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Repetitive peak reverse voltage

Forward current

1200

±20

10

20

59

1200

10

G-E Short

C-E Short

TC = 25°C

PULSE (Note. 2)

TC = 25°C

Clamp diode part

Symbol Parameter

Collector Current

Conditions Unit

V

A

W

V

A

Rating

VCES

VGES

IC

ICM

PC (

Note.3

)

VRRM

IFM (

Note.3

)

Repetitive peak reverse voltage

Recommended AC input voltage

DC output current

Surge (non-repetitive) forward current

I2t for fusing

1600

440

10

100

42

3φ rectifying circuit

1/2 cycle at 60Hz, peak value, Non-repetitive

Value for one cycle of surge current

Symbol Parameter Conditions UnitRating V

V

A

A2s

VRRM

Ea

IO

IFSM

I2t

VDRM

VRRM

IT(AV)

PGM

PG(AV)

IFGM

VFGM

VRGM

di/dt

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Average on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate forward current

Peak gate forward voltage

Peak gate reverse voltage

Critical rate of rise of on-state Current

Symbol Parameter Conditions UnitRating V

V

A

W

A

V

A/µs

MAXIMUM RATINGS

(Tj = 25°C)

INVERTER PART

BRAKE PART

CONVERTER PART

THYRISTOR PART

Tj

Tstg

Viso—

—

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

–40 ~ +150

–40 ~ +125

2500

1.47 ~ 1.96

120

Inverter, brake, converter part

Thyristor part

AC 1 min.

Mounting M4 screw

Typical value

Symbol Parameter Conditions UnitRating °C

°C

V

N·m

g

COMMON RATING

ITSM Surge (non-repetitive)

on-state current

Single-phase, half-wave 180° conduction

IG=100mA, VD=800V, dIG/dt=1A/µs

1600

10

1

3

10

5

100

1/2 cycle at 60Hz, peak value Non-repetitive 100 A

http://store.iiic.cc/

Sep. 2000

mA

µA

nF

nC

ns

V

ns

µC

°C/W

Typ.

V

MITSUBISHI IGBT MODULES

CM10AD00-24H

MEDIUM POWER SWITCHING USE

FLAT B ASE, INSULATED TYPE

1

0.5

3.4

—

2.0

1.5

0.4

—

100

200

150

350

3.5

250

—

2.0

3.1

VCE = VCES, VGE = 0V

VGE = VGES, VCE = 0V

Tj = 25°C

Tj = 150°C

VCC = 600V , IC = 10A, VGE = 15V

VCC = 600V, IC = 10A

VGE1 = VGE2 = 15V

RG = 31Ω

Resistive load

IE = 10A, VGE = 0V

diE / dt = – 20A / µs

IGBT part, Per 1/6 module

FWDi part, Per 1/6 module

IC = 1.0mA, VCE = 10V

IC = 10A, VGE = 15V (Note.4)

VCE = 10V

VGE = 0V

—

2.7

2.45

—

50

—

0.08

—

ICES

IGES

Cies

Coes

Cres

QG

td(on)

tr

td(off)

tf

VEC(

Note.1

)

trr (

Note.1

)

Qrr (

Note.1

)

Rth(j-c)Q

Rth(j-c)R

Symbol Parameter Test conditions

VGE(th)

VCE(sat)

Collector cutoff current

Gate-emitter cutoff current

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Emitter-collector voltage

Reverse recovery time

Reverse recovery charge

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Thermal resistance

Limits

Min. Max. Unit

64.5 7.5

Collector cutoff current

Gate-emitter cutoff current

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Forward voltage drop

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Thermal resistance

V

1

0.5

3.4

—

2.0

1.5

0.4

—

3.5

2.1

3.2

VCE = VCES, VGE = 0V

VGE = VGES, VCE = 0V

Tj = 25°C

Tj = 150°C

VCC = 600V, IC = 10A, VGE = 15V

IF = 10A, Clamp diode part

IGBT part

Clamp diode part

mA

µA

nF

nC

V

°C/W

—

2.7

2.45

—

50

—

ICES

IGES

Cies

Coes

Cres

QG

VFM

Rth(j-c)Q

Rth(j-c)R

Symbol Parameter Test conditions

VGE(th)

VCE(sat)

Unit

64.5 7.5IC = 1.0mA, VCE = 10V

IC = 10A, VGE = 15V (Note.4)

VCE = 10V

VGE = 0V

Repetitive reverse current

Forward voltage drop

Thermal resistance

VR = VRRM, Tj = 150°C

IF = 10A

Per 1/6 module

mA

V

°C/W

—

IRRM

VFM

Rth(j-c)

Symbol Parameter Test conditions

8

1.7

2.6

Typ.

Limits

Min. Max.

Unit

Typ.

Limits

Min. Max.

ELECTRICAL CHARACTERISTICS

(Tj = 25°C)

INVERTER PART

BRAKE PART

CONVERTER PART

http://store.iiic.cc/

Sep. 2000

MITSUBISHI IGBT MODULES

CM10AD00-24H

MEDIUM POWER SWITCHING USE

FLAT BASE, INSULATED TYPE

IDRM

IRRM

ITM

IGT

VGT

IH

Rth(j-c)

Repetitive peak off-state current

Repetitive peak reverse current

On-state voltage

Gate trigger current

Gate trigger voltage

Holding current

Thermal resistance

THYRISTOR PART

dv/dt

VD=1600V

VR=1600V

IT=10A, instantaneous means

VD=6V, IT=1A

Tj=125°C, VD=1070V, exp. wavef orm

Critical rate of rise of off-state

Voltage

1

1.45

50

3

—

1.75

mA

V

mA

V

mA

°C/W

—

50

—

Symbol Parameter Test conditions Unit

Typ.

Limits

Min. Max.

500 — — V/µs

—

Resistance

Temperature coefficient Measured between N-N1 mΩ

%/°C

5.9

0.048

—

R—

Symbol Parameter Test conditions Unit

Typ.

Limits

Min. Max.

RESISTOR PART

—

Resistance

B Constant TC = 25°C

Resistance at 25°C, 50°C (Note.5) kΩ

K

100

4000

—

RTH

B

Symbol Parameter Test conditions Unit

Typ.

Limits

Min. Max.

THERMISTOR PART

Note.1 IE, VEC, t rr, Q rr, di E/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

2 Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

3 Junction temperature (Tj) should not increase beyond 150°C.

4 Pulse width and repetition rate should be such as to cause negligible temperature rise.

5 B = (InR1-InR2)/(1/T1-1/T2) R1 : Resistance at T1(K)

R2 : Resistance at T2(K)

*1 : Typical value is measured by using Shin-etsu Silicone “G-746”.

—

Contact thermal resistance Case to fin, Thermal compound applied*1 (1 module) °C/W0.05—

Rth(c-f)

Symbol Parameter Test conditions Unit

Typ.

Limits

Min. Max.

COMMON RATING

http://store.iiic.cc/