25C D MM 8235605 0004880 2 MMSIEG - sr35-/3 NPN Silicon Planar Transistors 2N 2218 ~ 2N 2219 STEMENS AKTIENGESELLSCHAF 2N2218A 2N2219A 2N 2218, 2N 2219, 2 N 2218A, and 2 N 2219 A are epitaxial NPN silicon planar transistors in TO 39 case (5 C 3 DIN 41873). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches of medium performance. Type Ordering code 2N 2218 Q62702-F109 2N 2219 Q62702-F133 2N2218A | 062702-S29 2N2219A | Q62702-F59 135+ 66-o4 Approx. weight 1.5 g Dimensions in mm Maximum ratings 2N 2218 2N2218A 2N 2219 2N2219A Collector-base voltage Vepo 60 75 Vv Collector-emitter voltage Veco 30 40 Vv Emitter-base voltage Vero 5 6 Vv Collector current Ic 0.8 0.8 A Junction temperature Tj 175 175 c Storage temperature range Tstg 65 to +200 C Total power dissipation (Tap S25 C) Prot 0.8 0.8 Ww Total power dissipation (Toase & 25 C) Prot 3 3 Ww Thermal resistance Junction to ambient air Ringa $188 $188 K/W Junction to case Rinse 50 $50 K/W 926 -- see 2242 F-1125C D MM 8235605 DO0484L 4 MMSIEG 290 04881 0 7.3543 2N 2218 2N 2219 ~STEMENS AKTIENGESELLSCHAF Static characteristics (T,mp = 25C) 2N 2218 2N2219 Collector-emitter saturation voltage Uc = 150 mA; Ib = 15 mA) VecEsat $0.4 so04 Vv (fo = 500 mA; Jp = 50 mA) Vcesat $1.6 21.6 Vv Base emitter saturation voltage (Ig = 150 mA; Jp = 15 mA) Vaesat 0.6 to 2 0.6 to 2 Vv (Ig = 500 mA; Jp = 50 mA) VeEsat $2.6 $26 Vv Collector cutoff current ; (Vcgo = 50 V) Iona $0.01 0.01 pA (Vcgo = 50 V; Tamb = 150C) Iczo $10 $10 HA Collector-emitter breakdown voltage Uc =10mA: Ig = 0) Vipriceo 30 30 V Collector-base breakdown voltage (Ic = 10 pA; Ie = 0) Viericao | 60 60 Vv Emitter-base breakdown voltage (fg = 10 pA; I, = 0) Vierjeso | 5 5 Vv DC current gain (Voce = 10 V; Ip = 0.1 mA) hre >20 > 35 - (Vce = 10 V; Ig = 1 mA) hee >25 >50 = (Vce = 10 V; Ig = 10 mA) hee >35 >75 - (Voce = 10 V; Ig = 150 mA) hee 40 to 120 100 to 300 | - (Vce = 10 V; Ig = 500 mA) hee >20 > 30 - 2243 F-12 - 4 + 927SIEMENS AKTIENGESELLSCHAF Static characteristics (T,,,,) = 25 C) Collector-emitter saturation voltage (Je = 150 mA; Ip =15 mA) (Ig = 500 mA; Jp = 50 mA) Base-emitter saturation voltage (fg = 150 mA; Jg = 15 mA) (Io = 500 mA; Jp = 50 mA) Emitter cutoff current (Vego = 3 V) Collector cutoff current (Vego = 60 V) Collector cutoff current (Vego = 60 V; Tamb = 150C) Collector-emitter breakdown voltage (ig = 10 mA; Ig = 0) Collector-base breakdown voltage (ic = 10 pA; Ie = 0) Emitter-base breakdown voitage Ug = 10 pA; Ig = 0) DC current gain (Voce = 10 V; Ig = 0.1 mA) (Vee = 10 V; Ie = 1 mA) (Vee = 10 V; Ip = 10 mA) (Vcg = 10 V; Ig = 10 MA; Tamb = 55 C} (Veg = 10 V; Ig = 150 mA) (Vee = 1 V; Ig = 150 mA) (Vee = 10 V; Ic = 500 mA) 928 2244 F-13 2N2218A 2N2219A 2N2218A | 2N2219A4 Veesat | $0.3 $0.3 Vv VeEsat s1 s1 Vv VeEsat 0.6 to 1,2 0.6 to 1.2 Vv Veesat $2 $2 Vv Teso $10 <10 nA Icgo $0.01 $0.01 BA Viariceo | >40 >40 V Viaricso | > 75 >75 V Vierjezo | >6 >6 Vv hee >20 > 35 - hee >25 >50 - hee >35 >75 ~ Ore >15 >35 - hee 40 to 120 100 to 300 | - hee > 20 > 50 - bre > 20 >40 -eSC D MM 8235605 0004883 & MESIEG 25C 04883 0-3/3: SIEMENS AKTIENGESELLSCHAF Dynamic characteristics (Tamp = 25 C) Transition frequency (Vce = 20 V; Ic = 20 mA; f = 100 MHz) Collector-base capacitance (Vopo = 10V; f = 100 kHz) Emitter base capacitance (Veno = 0.5 V; f = 100 kHz) Dynamic characteristics (T,,,) = 25 C) Transition frequency (Vee = 20 V; Ig = 20 mA; f = 100 MHz) Collector base capacitance (Vego = 10 V; f = 100 kHz} Emitter base capacitance (Vego = 0.5 V7 f = 100 kHz) Feedback time constant (Vop = 20 V; Ig = 20 mA; f = 31.8 MHz) Noise figure (Vce = 10 Vi Ig = 100 LA f= 1 kHz; Ag =1kQ) Switching times: Ug = 180 mA; Ig: = ~Ig2 = 15 mA, Voc = 30 V Delay time Rise time Storage time Fall time Four-pole characteristics (Veg = 10 V; Ig = 1 mA; f = 1 kHz) (Voce = 10 V; Ic = 10 mA; f = 1 kHz) (2245 F-14 2N 2218 2N 2219 2N 2218 A 2N2219A 2N 2218 2N 2219 ft > 250 > 250 MHz CcBo $8 <8 pF Cepo <30 <30 pF 2N 2218 A 2N2219A fr > 250 > 300 MHz Ccao <8 <8 pF CeBo <25 <25 pF lbb': Cy'g| < 150 <150 ps NF - <4 dB ty $10 $10 ns t $25 $25 ns ts $225 $225 ns tf <60 $60 ns Mite 1 to 3.5 2to8 kQ hi26 <5-10-+ <8-104 - hate 30 to 150 50 to 300 - ha2e 3to 15 5 to 35 LS Nite 0.2 to 1 0.25 to 1.25 | kQ hi2e 2.5 +1074 4-10-4 - hte 50 to 300 75 to 375 - h22e 10 to 100 25 to 200 BS 9292eSC D MM 42395605 0004884 T MMSTIEG 25C 04884 OT95-/3~ SIEMENS AKTIENGESELLSCHAF Total perm. power dissipation versus temperature W Prot = #(D 0 100 200 C DC current gain hre = f (Zc) VcE =1V, Vee =10V; Tamb = 26C 0 ge | fo" 10 10 10! 40? "103 mA > I, 930 2246 6-01 Permissible pulse load hnjc ~ f (td v = parameter 1 105 16% 10? tw? 107 10s Saturation vaitages Vaesat = f ich Vorsat =f (fc) mA fice = 10; Tamp = 25C 0 802 OF 06 08 10 12V Veesaty He sate5C D MM 8235605 0004885 1 MESIEG : 25C 04885 0-72 B5-/3 2N 2218 2N 2219 ~ SIEMENS AKTIENGESELLSCHAF --_- gn22184A 2N2219A Turn-on time ton = f (fc) Storage time t, = f (ie) ge = 10; Tamb = 25C: Veg = 30 V Fall time ty = f (4c); Tamp = 25C ns Vee = parameter . ns 10 10? Kyat Kate 10 10 10 10' 10 10 10? 10? mA 10! 10? 107 mA, > I, e Collector-base capacitance Transition frequency fr =f (Zc) Pf Cog =f (Vea): Tamp = 25C Miz Vee = 20V, Tam = 25C 0 Coa 10 Vv 10" 40 0 107 mA * Kea + I 10 2247 G-02 931