PD- 95154 IRLL014NPbF Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET(R) Power MOSFET l D l VDSS = 55V RDS(on) = 0.14 G ID = 2.0A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. SOT-223 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Max. Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units 2.8 2.0 1.6 16 2.1 1.0 8.3 16 32 2.0 0.1 7.2 -55 to + 150 A W W mW/C V mJ A mJ V/ns C Thermal Resistance Parameter RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. Max. Units 90 50 120 60 C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 4/20/04 IRLL014NPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance V GS(th) g fs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V (BR)DSS I GSS Qg Qgs Qgd t d(on) tr t d(off) tf C iss Coss C rss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 1.0 2.3 Typ. 0.015 9.5 1.1 3.0 5.1 4.9 14 2.9 230 66 30 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.14 VGS = 10V, ID = 2.0A 0.20 VGS = 5.0V, ID = 1.2A 0.28 VGS = 4.0V, ID = 1.0A 2.0 V VDS = VGS, I D = 250A S VDS = 25V, I D = 1.0A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 14 ID = 2.0A 1.7 nC VDS = 44V 4.4 VGS = 10V, See Fig. 6 and 9 VDD = 28V ID = 2.0A ns RG = 6.0 RD = 14, See Fig. 10 VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol 1.3 showing the A integral reverse 16 p-n junction diode. 1.0 V TJ = 25C, IS = 2.0A, VGS = 0V 41 61 ns TJ = 25C, I F = 2.0A 73 110 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by ISD 2.0A, di/dt 170A/s, VDD V(BR)DSS, VDD = 25V, starting TJ = 25C, L = 4.0mH Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 11 ) RG = 25, I AS = 4.0A. (See Figure 12) 2 TJ 150C www.irf.com IRLL014NPbF 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3.0V 1 0.1 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 20s PULSE WIDTH TJ = 25C A 1 10 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 100 0.1 1 V DS , Drain-to-Source Voltage (V) 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 25C TJ = 150C V DS = 25V 20s PULSE WIDTH 1 3.0 4.0 5.0 6.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics, Fig 1. Typical Output Characteristics, 10 10 V DS, Drain-to-Source Voltage (V) A 7.0 I D = 2.0A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLL014NPbF Ciss C, Capacitance (pF) 300 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS , Gate-to-Source Voltage (V) 400 I D = 2.0A V DS = 44V V DS = 28V 16 12 200 Coss 100 Crss 0 1 10 100 8 4 FOR TEST CIRCUIT SEE FIGURE 9 0 A 0 VDS , Drain-to-Source Voltage (V) 3 6 9 12 A 15 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 TJ = 150C TJ = 25C 1 10s 10 100s 1ms 1 10ms VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 A 1.6 TA = 25C TJ = 150C Single Pulse 0.1 1 A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLL014NPbF 10V QGS RD V DS QG VGS QGD D.U.T. RG + - VDD VG 10V Pulse Width 1 s Duty Factor 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 90% 50K .2F 12V .3F D.U.T. + V - DS 10% VGS VGS td(on) 3mA IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (ZthJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 t 1 t 0.01 1 Notes: 1. Duty factor D = t SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 1 /t 2 2 2. Peak TJ = PDM x Z thJA + T A 0.01 0.1 1 10 100 A 1000 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 15V L VDS D.U.T RG IAS 10V tp DRIVER + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp E AS , Single Pulse Avalanche Energy (mJ) IRLL014NPbF 80 TOP BOTTOM ID 1.8A 3.2A 4.0A 60 40 20 0 VDD = 25V 25 50 A 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com IRLL014NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS www.irf.com 7 IRLL014NPbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 INT ERNAT IONAL RECTIF IER LOGO PART NUMBE R T OP 8 LOT CODE FL014 314P AXXXX A = AS S EMBLY S IT E DAT E CODE CODE (YYWW) YY = YEAR WW = WEEK P = DE S IGNATES LEAD-F REE PRODUCT (OPTIONAL) BOT TOM www.irf.com IRLL014NPbF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 2.05 (.080) 1.95 (.077) TR 4.10 (.161) 3.90 (.154) 0.35 (.013) 0.25 (.010) 1.85 (.072) 1.65 (.065) 7.55 (.297) 7.45 (.294) 16.30 (.641) 15.70 (.619) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 2.30 (.090) 2.10 (.083) 7.10 (.279) 6.90 (.272) 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. 50.00 (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/04 www.irf.com 9