IRLL014NPbF
HEXFET® Power MOSFET
S
D
G
VDSS = 55V
RDS(on) = 0.14Ω
ID = 2.0A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
4/20/04
Description
lSurface Mount
lAdvanced Process Technology
lUltra Low On-Resistance
lDynamic dv/dt Rating
lFast Switching
lFully Avalanche Rated
lLead-Free
SOT-223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Parameter Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)* 90 120
RθJA Junction-to-Amb. (PCB Mount, steady state)** 50 60
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.8
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 2.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.6
IDM Pulsed Drain Current 16
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy32 mJ
IAR Avalanche Current 2.0 A
EAR Repetitive Avalanche Energy* 0.1 mJ
dv/dt Peak Diode Recovery dv/dt 7.2 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
A
PD- 95154
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IRLL014NPbF
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T
JBreakdown Voltage Temp. Coefficient 0.015 V/°C Reference to 25°C, ID = 1mA
0.14 VGS = 10V, ID = 2.0A
0.20 ΩVGS = 5.0V, ID = 1.2A
0.28 VGS = 4.0V, ID = 1.0A
VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 2.3 S VDS = 25V, ID = 1.0A
25 µA VDS = 55V, VGS = 0V
250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 nA VGS = 16V
Gate-to-Source Reverse Leakage -100 VGS = -16V
QgTotal Gate Charge 9.5 14 ID = 2.0A
Qgs Gate-to-Source Charge 1.1 1.7 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 3.0 4.4 VGS = 10V, See Fig. 6 and 9
td(on) Turn-On Delay Time 5.1 VDD = 28V
trRise Time 4.9 ns ID = 2.0A
td(off) Turn-Off Delay Time 14 RG = 6.0Ω
tfFall Time 2.9 RD = 14Ω, See Fig. 10
Ciss Input Capacitance 230 VGS = 0V
Coss Output Capacitance 66 pF VDS = 25V
Crss Reverse Transfer Capacitance 30 = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
VDD = 25V, starting TJ = 25°C, L = 4.0mH
RG = 25Ω, IAS = 4.0A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V
trr Reverse Recovery Time 41 61 ns TJ = 25°C, IF = 2.0A
Qrr Reverse RecoveryCharge 73 110 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
16
1.3
A
IRLL014NPbF
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Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10 100
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 4.0 5.0 6.0 7.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 25V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 2.0A
D
IRLL014NPbF
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
100
200
300
400
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 3 6 9 12 15
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 2.0A
V = 44V
V = 28V
D
DS
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
0.1
1
10
100
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
10µs
100µs
1ms
10ms
A
A
J
IRLL014NPbF
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Q
G
Q
GS
Q
GD
V
G
Charge
+
-
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
D.U.T. VDS
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
10V
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t , Rectangular Pulse Duration (sec)
1
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
Thermal Response (Z )
thJA
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
J
DM thJA
A
IRLL014NPbF
6www.irf.com
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
0
20
40
60
80
25 50 75 100 125 150
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
V = 25V
I
TOP 1.8A
3.2A
BOTTOM 4.0A
DD
D
Fig 12a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
10V
IRLL014NPbF
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Fig 13. For N-Channel HEXFETS
IRLL014NPbF
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SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
P = DE S I GNAT E S L E AD- F RE E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE
CODE
TOP BOTTOM
LOGO 314P AXXXX
PART NUMBE R
INT ERNAT IONAL
RECTIF IER
HEXFET PRODUCT MARKING
FL014
THIS IS AN IRFL014
LOT CODE
DAT E CODE
(YYWW)
YY = YEAR
WW = WEEK
IRLL014NPbF
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SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154) 1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
12.10 (.475)
11.90 (.469)
7.10 (.279)
6.90 (.272)
1.60 (.062)
1.50 (.059)
TYP.
7.55 (.297)
7.45 (.294)
7.60 (.299)
7.40 (.292)
2.30 (.090)
2.10 (.083)
16.30 (.641)
15.70 (.619)
0.35 (.013)
0.25 (.010)
FEED DIRECTION
TR
13.20 (.519)
12.80 (.504)
50.00 (1.969)
MIN.
330.00
(13.000)
MAX.
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
3
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
15.40 (.607)
11.90 (.469)
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/04
