BU806
BU807
MEDIUM VOLTAGE NPN FAST SWITCHING
DARLINGTON TRANSISTORS
■STMicroelec tronic s PREF ERRE D
SALESTYPES
■NPN DARLINGTONS
■LOW BASE-DRIVE REQUIREMENTS
■INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
■HORIZO NTAL DE FLECTION FOR
M ONO CH R OME TVs
DESCRIPTION
The devices are silicon Epitaxial Planar NPN
power transistors in Darlington configuration with
integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of
110 oCRT video displays. INTERNAL SCHEMATI C DIAG RAM
October 2003
ABS O LUT E MAXIM UM RATI NG S
Symbol Parameter Value Unit
BU806 BU807
VCBO Collector-base Voltage (IE = 0) 400 330 V
VCEV Collector-emitter Voltage (VBE = -6V) 400 330 V
VCEO Collector-emitter Voltage (IB = 0) 200 150 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
ICCollector Current 8 A
ICM Collector Peak Current 15 A
IDM Damper Diode Peak Forward Current 10 A
IBBase Current 2 A
Ptot Total Power Dissipation at Tcase < 25 oC60 W
Tstg Storage Temperature -65 to 150 oC
TjMax Operating Junction Temperature 150 oC
123
TO-220
®
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 2.08
70
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) for BU807 VCE = 330 V
for BU806 VCE = 400 V 100
100 µA
µA
ICEV Collector Cut-off
Current (VBE = -6V) for BU807 VCE = 330 V
for BU806 VCE = 400 V 100
100 µA
µA
IEBO Emitter Cut-off
Current (IC = 0) VEB = 6 V 3.5 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA for BU807
for BU806 150
200 V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 5A IB = 50mA 1.5 V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 5A IB = 50mA 2.4 V
VF∗Damper Diode
Forward Voltage IF = 4A 2 V
ton
toff
ts
tf
RESISTIVE LOAD
Turn-on Time
Turn-off Time
Storage Time
Fall Time
IC = 5 A VCC = 100 V
IB1 = 50 mA IB2 = -500 mA 0.35
0.4
0.55
0.2
1µs
µs
µs
µs
∗ P ulsed: Pulse durat ion = 300 µs, duty cycle < 1.5 %
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
P011CI
TO-220 MECHANICAL DATA
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich may re sult fro m its u se. N o l i cen se i s
granted by implication or otherwise under any patent or patent rights of STM icroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. S TMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectro nics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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