Continental Device India Limited Data Sheet Page 2 of 3
Base current IBmax. 1.0 A
Total power dissipation up to TC = 25°C Ptot max. 50 W
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150 º
C
THERMAL RESISTANCE
From junction to case Rth j–c 2.5
°C/W
From junction to ambient Rth j–a 70
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 533 535 537
534 536 538
Collector cutoff current
IE = 0; VCB = 45 V ICBO max. 100 – – µA
IE = 0; VCB = 60 V ICBO max. – 100 – µA
IE = 0; VCB = 80 V ICBO max. – – 100 µA
VBE = 0; VCE = 45V ICES max. 100 – – µA
VBE = 0; VCE = 60V ICES max. – 100 – µA
VBE = 0; VCE = 80V ICES max. – – 100 µA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 1.0 mA
Breakdown voltages
IC = 100 mA; IB = 0 VCEO(sus)* min. 45 60 80 V
IC = 1 mA; IE = 0 VCBO min. 45 60 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 2.0 A; IB = 0.2 A VCEsat* max. 0.8 V
IC = 6.0 A; IB = 0.6 A VCEsat* typ. 0.8 V
Base-emitter on voltage
IC = 2A; VCE = 2V VBE(on)* max. 1.5 V
D.C. current gain
IC = 10mA; VCE = 5V hFE* min. 20 20 15
IC = 500mA; VCE = 2V hFE* min. 40
IC = 2A; VCE = 2V hFE* min. 25 25 15
Transition frequency
IC = 500 mA; VCE = 1V fTmin. 3.0 MHz
hFE Groups:
IC = 2A; VCE = 2V J min. 30
max. 75
IC = 3A; VCE = 2V min. 15
IC = 2A; VCE = 2V K min. 40
max. 100
IC = 3A; VCE = 2V min. 20
* Pulsed: pulse duration = 300 µs; duty cycle = 1.5%.
BD533, BD535, BD537
BD534, BD536, BD538