Continental Device India Limited Data Sheet Page 1 of 3
BD533, 535, 537 NPN PLASTIC POWER TRANSISTORS
BD534, 536, 538 PNP PLASTIC POWER TRANSISTORS
Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS 533 535 537
534 536 538
Collector-base voltage (open emitter) VCBO max. 45 60 80 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Collector and emitter current IC, IEmax. 8.0 A
Total power dissipation up to TC = 25°C Ptot max. 50 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 2 A; IB = 0.2 A VCEsat max. 0.8 V
D.C. current gain
IC = 10 mA; VCE = 5 V hFE min. 20 20 15
RATINGS (at TA=25°C unless otherwise specified) 533 535 537
534 536 538
Collector-base voltage (open emitter) VCBO max. 45 60 80 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Collector-emitter voltage (VBE = 0) VCES max. 45 60 80 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
Collector and emitter current IC, IEmax. 8.0 A
BD533, BD535, BD537
BD534, BD536, BD538
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
O
O
K
N
L
FE
C
DIM MIN. MAX.
All dim insions in m m .
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
123
4
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
Continental Device India Limited Data Sheet Page 2 of 3
Base current IBmax. 1.0 A
Total power dissipation up to TC = 25°C Ptot max. 50 W
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150 º
C
THERMAL RESISTANCE
From junction to case Rth j–c 2.5
°C/W
From junction to ambient Rth j–a 70
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 533 535 537
534 536 538
Collector cutoff current
IE = 0; VCB = 45 V ICBO max. 100 µA
IE = 0; VCB = 60 V ICBO max. 100 µA
IE = 0; VCB = 80 V ICBO max. 100 µA
VBE = 0; VCE = 45V ICES max. 100 µA
VBE = 0; VCE = 60V ICES max. 100 µA
VBE = 0; VCE = 80V ICES max. 100 µA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 1.0 mA
Breakdown voltages
IC = 100 mA; IB = 0 VCEO(sus)* min. 45 60 80 V
IC = 1 mA; IE = 0 VCBO min. 45 60 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 2.0 A; IB = 0.2 A VCEsat* max. 0.8 V
IC = 6.0 A; IB = 0.6 A VCEsat* typ. 0.8 V
Base-emitter on voltage
IC = 2A; VCE = 2V VBE(on)* max. 1.5 V
D.C. current gain
IC = 10mA; VCE = 5V hFE* min. 20 20 15
IC = 500mA; VCE = 2V hFE* min. 40
IC = 2A; VCE = 2V hFE* min. 25 25 15
Transition frequency
IC = 500 mA; VCE = 1V fTmin. 3.0 MHz
hFE Groups:
IC = 2A; VCE = 2V J min. 30
max. 75
IC = 3A; VCE = 2V min. 15
IC = 2A; VCE = 2V K min. 40
max. 100
IC = 3A; VCE = 2V min. 20
* Pulsed: pulse duration = 300 µs; duty cycle = 1.5%.
BD533, BD535, BD537
BD534, BD536, BD538
Continental Device India Limited Data Sheet Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com www.cdil.com