STR-Y6763, STR-Y6765, and STR-Y6766
Description
The STR-Y6763, STR-Y6765, and STR-Y6766 each comprise
a power MOSFET and a multi-functional monolithic integrated
circuit (MIC) controller designed for controlling switch mode
power supplies. The quasi-resonant mode of operation, coupled
with the bottom-skip function, allows high efficiency and low
noise at low to high operational levels, while burst oscillation
mode ensures minimum power consumption at standby.
In order to sustain low power consumption under low load and
in standby mode, the controller has built-in startup and standby
circuits. This enables output power for the STR-Y6763 up
to 50 W with universal input or 80 W with a 380 VDC input,
STR-Y6765 up to 70 W with universal input or 120 W with
a 380 VDC input and for the STR-Y6766 up to 80 W with
universal input or 140 W with a 380 VDC input.
The compact 7-pin full mold package (TO220F-7L) reduces
board space by requiring a minimum of external components,
thus simplifying circuit design. This IC, including various
protection functions, is an excellent choice for standardized,
compact power supplies.
Features and Benefits
• TO–220F–7L package
• Lead (Pb) free compliance
• The built-in startup circuit reduces the number of external
components and lowers standby power consumption
• Multi-mode control allows high efficiency operation
across the full range of loads
• Auto burst oscillation mode for standby mode, for
improving low standby power at no load: input power
< 30 mW at 100 VAC and < 50 mW at 230 VAC
• Bottom-skip mode minimizes switching loss at medium to
low loads
▪ Internal MOSFET VDSS(min) is 800 V
▪ Internal MOSFET RDS(on)(max) 3.5 Ω (STR-Y6763),
2.2 Ω (STR-Y6765) or 1.7 Ω (STR-Y6766)
• Built-in soft start function reduces stress applied to the
incorporated power MOSFET and peripheral components
• Step-on burst oscillation minimizes transformer
audible noise
• Built-in leading edge blanking (LEB) function eliminates
Of f-Line Quasi-Resonant Switching Regulators
Not to scale
Package: 7-Pin TO-220F
Continued on the next page…
Typical Application
GND
Error Amp
VCC
Controller
Chip (MIC)
STR-Y6700
GND
/
OLP
FB
BD
C1
P
S
T1
D
C2 DZ
D1 R2
BD
RBD2
R
CBD
C4
PC1
C3
R
CV
PC1
D/ST
S/OCP
BD1
NF
VOUT
R3
D2
C5
OC P
R4
R5
VAC
31
6
5
4
27
The NF pin (No. 7) should be connected
to the GND pin (No. 4), which should be
at a stable ground potential, to ensure
stability of operation.
STR-Y6763-DS
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
external filter components
• Built-in Bias Assist function enables stable startup operation
• VCC operational range expanded
• Internal power MOSFET is avalanche energy guaranteed; two-
chip structure
• Protection functions
▫ Overcurrent protection (OCP): pulse by pulse basis, low
dependence on input voltage
▫ Overload protection (OLP): latched shutoff*
▫ Overvoltage protection (OVP): latched shutoff*
▫ Maximum on-time limitation
▫ Thermal shutdown protection (TSD): latched shutoff*
Features and Benefits (continued)
*Latched shutoff means the output is kept in a shutoff mode
for protection, until reset.
Selection Guide
Part Number VDSS(min)
(V)
RDS(on)(max)
(Ω)Package Packing
STR-Y6763
800
3.5
TO-220F 50 pieces per tube
STR-Y6765 2.2
STR-Y6766 1.7
STR-Y6763-DS
2
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
Absolute Maximum Ratings Unless specifically noted, TA = 25°C and VCC = 20 V
Characteristic Symbol Notes Pins Rating Unit
Drain Current1IDPEAK
STR-Y6763
Single pulse 1 – 2
6.7 A
STR-Y6765 8.9 A
STR-Y6766 10.5 A
Maximum Switching Current IDMAX
STR-Y6763
TA = 20°C to 125°C 1 – 2
6.7 A
STR-Y6765 8.9 A
STR-Y6766 10.5 A
Single Pulse Avalanche Energy2EAS
STR-Y6763 Single pulse, VDD = 99 V,
L= 20 mH, ILPEAK= 2.3 A
1 – 2
60 mJ
STR-Y6765 Single pulse, VDD = 99 V,
L= 20 mH, ILPEAK= 2.6 A 77 mJ
STR-Y6766 Single pulse, VDD = 99 V,
L= 20 mH, ILPEAK= 3.2 A 116 mJ
Input Voltage in Control Part (MIC) VCC 3 – 4 35 V
Startup (D/ST) Pin Voltage VSTARTUP 1 – 4 1.0 to VDSS V
OCP Pin Voltage VOCP 2 – 4 2.0 to 6.0 V
FB Pin Voltage VFB 5 – 4 0.3 to 7.0 V
FB Pin Sink Current3IFB 5 – 4 10.0 mA
BD Pin Voltage VBD 6 – 4 6.0 to 6.0 V
Power Dissipation in MOSFET4PD1
STR-Y6763
With an infinite heatsink 1 – 2
19.9 W
STR-Y6765 21.8 W
STR-Y6766 23.6 W
Without heatsink 1 – 2 1.8 W
Power Dissipation in Control Part (MIC) PD2 – 0.8 W
Internal Frame Temperature in Operation TF
Recommended internal frame temperature
is TF = 105°C (max). –20 to 115 °C
Operating Ambient Temperature TOP –20 to 115 °C
Storage Temperature Tstg –40 to 125 °C
Channel Temperature Tch – 150 °C
1Refer to MOSFET Safe Operating Area Curve.
2Refer to MOSFET Avalanche Energy Derating Coefficient Curve.
3The polarity value for current specifies a sink as "+ ," and a source as “,” referencing the IC.
4Refer to MOSFET Temperature versus Power Dissipation Curve.
STR-Y6763-DS
3
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
Functional Block Diagram
VCC
GND
D/ST
S/OCP
FB/OLP
BD
UVLO
Reg/Iconst
Latch
OSC
Startup
Logic
DRV
OCP/BS
FB/STB
OLP
BD
NF
3 1
2
5
6
4
7
MIC
STR-Y6700
Pin List Table
Name Number Function
1 D/ST MOSFET drain and Startup circuit input
2 S/OCP MOSFET source and overcurrent detection
signal input
3 VCC Control circuit power supply input
4 GND Ground
5 FB/OLP
Constant Voltage Control signal input,
Standby control, and overload detection
signal input
6BD
Bottom Detection signal input, Input
Compensation detection signal input
7NF
For stable operation, connect to GND pin,
using the shortest possible path
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature, TA, of 25°C, unless oth er wise stated.
STR-Y6763-DS
4
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
Electrical Characteristics of Control Part (MIC) Unless specifically noted, TA = 25°C and VCC = 20 V
Characteristic Symbol Test Conditions Pins Min. Typ. Max. Unit
Power Supply Startup Operation
Operation Start Voltage VCC(ON) 3 – 4 13.8 15.1 17.3 V
Operation Stop Voltage1VCC(OFF) 3 – 4 8.4 9.4 10.7 V
Circuit Current in Operation ICC(ON) 3 – 4 – 1.3 3.7 mA
Circuit Current in Non-Operation ICC(OFF) VCC = 13 V 3 – 4 – 4.5 50 A
Startup Circuit Operation Voltage VSTART(ON) 1 – 4 42 57 72 V
Startup Current ICC(STARTUP) VCC = 13 V 3 – 4 4.5 3.1 1.0 mA
Startup Current Supply Threshold
Voltage1VCC(BIAS) 3 – 4 9.5 11.0 12.5 V
Operation Frequency fOSC 1 – 4 18.4 21.0 24.4 kHz
Soft Start Operation Duration tSS 1 – 4 – 6.05 – ms
Normal Operation
Bottom-Skip Operation Threshold
Voltage 1 VOCP(BS1) 2 – 4 0.487 0.572 0.665 V
Bottom-Skip Operation Threshold
Voltage 2 VOCP(BS2) 2 – 4 0.200 0.289 0.380 V
Quasi-Resonant Operation Threshold
Voltage 12VBD(TH1) 6 – 4 0.14 0.24 0.34 V
Quasi-Resonant Operation Threshold
Voltage 22VBD(TH2) 6 – 4 – 0.17 – V
Maximum Feedback Current IFB(MAX) 5 – 4 320 205 120 A
Stand-by Operation
Standby Operation Threshold Voltage VFB(STBOP) 5 – 4 0.45 0.80 1.15 V
Protected Operation
Maximum On-Time tON(MAX) 1 – 4 30.0 40.0 50.0 s
Leading Edge Blanking Time tON(LEB)
STR-Y6763
1 – 4
– 470 – ns
STR-Y6765 – 455 – ns
STR-Y6766 – 455 – ns
Overcurrent Detection Threshold
Voltage (Normal Operation) VOCP(H) VBD = 0 V 2 – 4 0.820 0.910 1.000 V
Overcurrent Detection Threshold
Voltage (Input Compensation in
Operation)
VOCP(L) VBD = –3 V 2 – 4 0.560 0.660 0.760 V
Overcurrent Detection Threshold
Voltage (Latched shutoff)3VOCP(La.OFF) 2 – 4 1.65 1.83 2.01 V
Continued on the next page…
STR-Y6763-DS
5
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
Electrical Characteristics of MOSFET Unless specifically noted, TA = 25°C and VCC = 20 V
Characteristic Symbol Test Conditions Pins Min. Typ. Max. Unit
Voltage Between Drain and Source VDSS 1 – 2 800 – – V
Drain Leakage Current IDSS 1 – 2 – – 300 A
On-Resistance RDS(on)
STR-Y6763 1 – 2 – – 3.5
STR-Y6765 1 – 2 – – 2.2
STR-Y6766 1 – 2 – – 1.7
Switching Time tf
STR-Y6763
1 – 2
– – 250 ns
STR-Y6765 – – 300 ns
STR-Y6766 – – 300 ns
Thermal Resistance Rch-F
STR-Y6763 Between a channel
of the MOSFET
and the internal
leadframe
1 – 2
– 2.8 3.2 °C/W
STR-Y6765 – 2.3 2.6 °C/W
STR-Y6766 – 1.9 2.2 °C/W
Electrical Characteristics of Control Part (MIC) (Continued) Unless specifically noted, TA = 25°C and VCC = 20 V
Characteristic Symbol Test Conditions Pins Min. Typ. Max. Unit
BD Pin Source Current IBD(O) 6 – 4 250 83 30 A
OLP Bias Current IFB(OLP) 5 – 4 15 10 5A
OLP Threshold Voltage VFB(OLP) 5 – 4 5.50 5.96 6.40 V
OVP Threshold Voltage VCC(OVP) 3 – 4 28.5 31.5 34.0 V
FB Pin Maximum Voltage in Feedback
Operation VFB(MAX) 5 – 4 3.70 4.05 4.40 V
Thermal Shut Down Temperature TJ(TSD) – 135 – – °C
Note: The polarity value for current specifies a sink as "+ ," and a source as “,” referencing the IC.
1The relation of VCC(BIAS) > VCC(OFF) is maintained.
2The relation of VBD(TH1) > VBD(TH2) is maintained in each product.
2The latch circuit means a circuit operated OVP, OLP, OCP (latch-off), or TSD.
STR-Y6763-DS
6
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
10
1
0.1
0.01
0.001
Transient Thermal Resistance, Rch-c (°C/W)
Transient Thermal Resistance Curve
Time (s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
Ambient Temperature, TA (°C)
30
25
20
15
10
5
0
With infinite heatsink
19.9
1.8 Without heatsink
0 25 50 75 125100 150
MOSFET Temperature versus Power Dissipation Curve
Allowable Power Dissipation, PD1 (W)
115
Channel Temperature, Tch (°C)
100
80
60
40
20
0
25 50 75 125100 150
EAS
Temperature Derating Coefficient (%)
MOSFET Avalanche Energy Derating Coefficient Curve
Drain-to-Source Voltage, VDS (V)
10
1
0.1
0.01
MOSFET Safe Operating Area Curve
Drain current limited
by on-resistance
1 ms
0.1 ms
Drain Current, ID (A)
To use this graph, apply the S.O.A
temperature derating coefficient
taken from the graph at the left
TA = 25°C
Single pulse
10010 1000
Channel Temperature, Tch (°C)
100
80
60
40
20
00 25 50 75 125100 150
Safe Operating Area
Temperature Derating Coefficient (%)
S. O. A. Temperature Derating Coefficient Curve
115
Characteristic Performance (STR-Y6763)
STR-Y6763-DS
7
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
10
1
0.1
0.01
0.001
Transient Thermal Resistance, Rch-c (°C/W)
Transient Thermal Resistance Curve
Time (s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
Ambient Temperature, TA (°C)
30
25
20
15
10
5
0
With infinite heatsink
21.8
1.8 Without heatsink
0 25 50 75 125100 150
MOSFET Temperature versus Power Dissipation Curve
Allowable Power Dissipation, PD1 (W)
115
Channel Temperature, Tch (°C)
100
80
60
40
20
0
25 50 75 125100 150
EAS
Temperature Derating Coefficient (%)
MOSFET Avalanche Energy Derating Coefficient Curve
Drain-to-Source Voltage, VDS (V)
10
1
0.1
0.01
MOSFET Safe Operating Area Curve
Drain current limited
by on-resistance
1 ms
0.1 ms
Drain Current, ID (A)
To use this graph, apply the S.O.A
temperature derating coefficient
taken from the graph at the left
TA = 25°C
Single pulse
10010 1000
Channel Temperature, Tch (°C)
100
80
60
40
20
00 25 50 75 125100 150
Safe Operating Area
Temperature Derating Coefficient (%)
S. O. A. Temperature Derating Coefficient Curve
115
Characteristic Performance (STR-Y6765)
STR-Y6763-DS
8
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
10
1
0.1
0.01
0.001
Transient Thermal Resistance, Rch-c (°C/W)
Transient Thermal Resistance Curve
Time (s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
Ambient Temperature, TA (°C)
30
25
20
15
10
5
0
With infinite heatsink
23.6
1.8 Without heatsink
0 25 50 75 125100 150
MOSFET Temperature versus Power Dissipation Curve
Allowable Power Dissipation, PD1 (W)
115
Channel Temperature, Tch (°C)
100
80
60
40
20
0
25 50 75 125100 150
EAS
Temperature Derating Coefficient (%)
MOSFET Avalanche Energy Derating Coefficient Curve
Drain-to-Source Voltage, VDS (V)
100
10
1
0.1
MOSFET Safe Operating Area Curve
Drain current limited
by on-resistance
1 ms
0.1 ms
Drain Current, ID (A)
To use this graph, apply the S.O.A
temperature derating coefficient
taken from the graph at the left
TA = 25°C
Single pulse
10010 1000
Channel Temperature, Tch (°C)
100
80
60
40
20
00 25 50 75 125100 150
Safe Operating Area
Temperature Derating Coefficient (%)
S. O. A. Temperature Derating Coefficient Curve
115
Characteristic Performance (STR-Y6766)
STR-Y6763-DS
9
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
Package Outline Drawing
b
a
STR
（5.6）
±0.2
（At base of pin）
（At base of pin）
（At tip of pin）
Front view Side view
（At tip of pin）
±0.3
＝5.85±0.15
5×P1.17±0.15
5±0.5
±0.2
（1.1）
±0.2
7
6
5
4
3
2
1
10
15
±0.510.4
7-0.55 +0.2
-0.1
7-0.62 ±0.15
2±0.15
2.8 +0.2
4.2
2.6
±0.12.6
R-end
5±0.5
R-end
-0.1
+0.2
0.45 2.54±0.6
5.08±0.6
0.50.5 0.50.5
Gate burr
Unit: mm
b: Lot number
1
st
letter: Last digit of year
2
nd
letter: Month
Jan to September: Numeric
October: O
November: N
December: D
3
rd
and 4
th
letter: Date
01 to 31: Numeric
5
th
letter: Internal use control number
Package: TO-220F
(Sanken leadform #3051)
Leadframe material: Cu
Weight: Approximately 1.45 g
a: Part # Y676x
Ø3.2 ±0.2
"Gate Burr" shows area
where 0.3 mm (max) gate
burr may be present
Pin treatment: Solder dip
Pin treatment Pb-free. Device composition
compliant with the RoHS directive.
STR-Y6763-DS
10
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
540 ± 2
ANTISTATIC
620
125
185
14.5
4.5
34.5
4.8 ± 0.3
1.5 ± 0. 3 2.1
17.3 15. 6± 0.3
611(15.9)
50 pieces per tube
Tube dimensions (mm)
Carton dimensions (mm)
36 tubes per carton (maximum)
1800 pieces maximum per carton
Packing Specifications
STR-Y6763-DS
11
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
Because reliability can be affected adversely by improper storage
environments and handling methods, please observe the following
cautions.
Cautions for Storage
• Ensure that storage conditions comply with the standard
temperature (5°C to 35°C) and the standard relative humidity
(around 40% to 75%); avoid storage locations that experience
extreme changes in temperature or humidity.
• Avoid locations where dust or harmful gases are present and
avoid direct sunlight.
• Reinspect for rust on leads and solderability of products that have
been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and other
standard test periods, protect the products from power surges
from the testing device, shorts between the product pins, and
wrong connections.
Remarks About Using Silicone Grease with a Heatsink
• When silicone grease is used in mounting this product on a
heatsink, it shall be applied evenly and thinly. If more silicone
grease than required is applied, it may produce excess stress.
• Volatile-type silicone greases may crack after long periods of
time, resulting in reduced heat radiation effect. Silicone grease
with low consistency (hard grease) may cause cracks in the mold
resin when screwing the product to a heatsink.
• Our recommended silicone greases for heat radiation purposes,
which will not cause any adverse effect on the product life, are
indicated below:
Type Suppliers
G746 Shin-Etsu Chemical Co., Ltd.
YG6260 MOMENTIVE Performance Materials, Inc.
SC102 Dow Corning Toray Co., Ltd.
Heatsink Assembly
• Attachment torque should be in the range 0.588 to 0.785 N•m
(6 to 8 kgf•cm).
Soldering
• The leadframe temperature should never exceed
TF = 105°C(max).
• When soldering the products, please be sure to minimize the
working time, within the following limits:
260±5°C 10 s
350±5°C 3 s (solder iron)
• Soldering iron should be at a distance of at least 2.0 mm from the
body of the products.
Electrostatic Discharge
• When handling the products, the operator must be grounded.
Grounded wrist straps worn should have at least 1 M of
resistance from the operator to ground to prevent shock hazard,
and it should be placed near the operator.
• Workbenches where the products are handled should be
grounded and be provided with conductive table and floor mats.
• When using measuring equipment such as a curve tracer, the
equipment should be grounded.
• When soldering the products, the head of soldering irons or the
solder bath must be grounded in other to prevent leak voltages
generated by them from being applied to the products.
• The products should always be stored and transported in Sanken
shipping containers or conductive containers, or be wrapped in
aluminum foil.
STR-Y6763-DS
12
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Of f-Line Quasi-Resonant Switching Regulators
STR-Y6763,
STR-Y6765, and
STR-Y6766
Copyright ©2012 Allegro MicroSystems, Inc.
The products described herein are manufactured in Ja pan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.
Sanken and Allegro reserve the right to make, from time to time, such de par tures from the detail spec i fi ca tions as may be re quired to per mit im-
prove ments in the per for mance, reliability, or manufacturability of its prod ucts. Therefore, the user is cau tioned to verify that the in for ma tion in this
publication is current before placing any order.
When using the products described herein, the ap pli ca bil i ty and suit abil i ty of such products for the intended purpose shall be reviewed at the users
responsibility.
Although Sanken undertakes to enhance the quality and reliability of its prod ucts, the occurrence of failure and defect of semi con duc tor products
at a certain rate is in ev i ta ble.
Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems
against any possible injury, death, fires or damages to society due to device failure or malfunction.
Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equip ment or apparatus
(home ap pli anc es, office equipment, tele com mu ni ca tion equipment, measuring equipment, etc.). Their use in any application requiring radiation
hardness assurance (e.g., aero space equipment) is not supported.
When considering the use of Sanken products in ap pli ca tions where higher reliability is re quired (transportation equipment and its control systems
or equip ment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written
confirmation of your spec i fi ca tions.
The use of Sanken products without the written consent of Sanken in applications where ex treme ly high reliability is required (aerospace equip-
ment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.
The information in clud ed herein is believed to be accurate and reliable. Ap pli ca tion and operation examples described in this pub li ca tion are
given for reference only and Sanken and Allegro assume no re spon si bil i ty for any in fringe ment of in dus tri al property rights, intellectual property
rights, or any other rights of Sanken or Allegro or any third party that may result from its use. The contents in this document must not be transcribed
or copied without Sanken’s or Allegro's written consent.
STR-Y6763-DS
13
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
