DATA SH EET
Product specification September1995
DISCRETE SEMICONDUCTORS
BFS17A
NPN 3 GHz wideband transistor
September1995 2
NXP Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
It is intended for RF applications such as oscillators
in TV tuners.
PINNING
PIN DESCRIPTION
1base
2 emitter
3 collector
Fig.1 SOT23.
Marking code: E2p.
handbook, halfpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the A bsolute Maxi m um Rating System (IEC 134).
Note to the Quick reference data and the Limiting values
1. Ts is the temperature at the sold ering point of the collector pin.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter 25 V
VCEO collector-emitter voltage open base 15 V
ICDC collector current 25 mA
Ptot total power dissipation up to Ts=70C; note 1 300 mW
fTtransition frequenc y IC=25mA; V
CE = 5 V; f = 500 MHz;
Tamb =25C2.8 GHz
GUM maximum unilateral power gain IC=14mA; V
CE =10V; f=800MHz 13.5 dB
F noise figure IC=2mA; V
CE = 5 V; f = 800 MHz;
Tamb =25C2.5 dB
VOoutput voltage dim =60 dB; IC=14mA; V
CE =10V;
RL=75; Tamb =25C;
f(p+qr) =793.25MHz
150 mV
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 25 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2.5 V
ICDC collector current 25 mA
ICM peak collector current 50 mA
Ptot total power dissipation up to Ts=70C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tjjunction temperature 150 C
September1995 3
NXP Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
THERMAL CHARACTE RISTI CS
Note
1. Ts is the temperature at the sold ering point of the collector pin.
CHARACTERISTICS
Tj=25C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and dB.
2. dim =60 dB (DIN 45004B); IC=14mA; V
CE =10V; R
L=75; Tamb =25C;
Vp=V
O; fp= 795.25 MHz;
Vq=V
O6dB; f
q= 803.25 MHz;
Vr=V
O6dB; f
r= 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point up to Ts=70C; note 1 260 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE=0; V
CB =10V 50 nA
hFE DC current gain IC=2mA; V
CE =1V; T
amb =25C25 90
IC=25mA; V
CE =1V; T
amb =25C25 90
fTtransition frequenc y IC=25mA; V
CE = 5 V; f = 500 MHz;
Tamb =25C2.8 GHz
Cccollector capacitance IE=0; V
CB =10V; f=1MHz;
Tamb =25C0.7 pF
Ceemitter capacita nce IC=0; V
EB = 0.5V; f=1MHz 1.25 pF
Cre feedback ca pacitance IC=0; V
CE =5V; f=1MHz 0.6 pF
GUM maximum unilateral power gain
note 1 IC=14mA; V
CE =10V; f=800MHz 13.5 dB
F noise figure IC=2mA; V
CE =5V; Z
S=60;
f=800MHz; T
amb =25C2.5 dB
VOoutput voltage note 2 150 mV
GUM 10 log S21 2
1S
11 2
–1S
22 2
–
----------------------------------------------------------
=
September1995 4
NXP Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
Fig.2 Intermodulation distortion and second ord er inte rmodulation distortion test cir cu i t.
L1 = L3 = 5 H Ferroxcube choke.
L2 = 3 turns 0.4 mm copper wir e; winding pitch 1 mm; internal diame ter 3 mm.
handbook, full pagewidth
MBB251
18 Ω
1.5 nF
10 kΩL2
L1
1 nF
75 Ω
input
270 Ω
1 nF
L3
1.5 nF
1 nF
0.68 pF
3.3 pF
DUT
75 Ω
output
VCC
VBB
Fig.3 DC current gain as a fu nction of
collector current.
VCE =1V; T
amb =25C.
handbook, halfpage
0
100
50
010 30
MEA395
20 IC (mA)
hFE
Fig.4 Collector capacitance as a function of
collector-base voltage.
IE= 0; f = 1 MHz; Tamb =25C.
handbook, halfpage MEA903
0
1
0.5
04 8 12 16
VCB (V)
Cc
(pF)
September1995 5
NXP Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
Fig.5 Transition frequency as a function of
collector current.
VCE = 5 V; f = 500 MHz; Tamb =25C.
handbook, halfpage MEA904
0
0
1
2
3
4
20 40
IC (mA)
fT
(GHz)
Fig.6 Minimum noise figure as a func tion of
collector current.
VCE =5V; Z
s=60; f = 800 MHz; Tamb =25C.
handbook, halfpage MEA902
0
5
0
1
2
3
4
10 20
F
(dB)
IC (mA)
September1995 6
NXP Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
September1995 7
NXP Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document b efore initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This doc ument contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
Product specification The information and da ta
provided in a Product data she et shall define the
specification of the product as agreed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconduc tors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
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removal or replacement of any products or rework
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Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and prod uct descriptions, at any time and
without notice. This document supersedes and replaces all
information su pplied prior to the publication hereof.
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not designed, authorized or warranted to be suitable for
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equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to res ult in personal injur y, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductor s pr od ucts in such equipment or
application s and therefore such inclusion and /or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors pro du ct is su itable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and opera ting safeguards to minimi ze the ris ks
associated with their ap plications and produ cts .
September1995 8
NXP Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semic on ductors produc ts in or de r to
avoid a default of the app lications and the products or of
the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subje ct to th e general
terms and conditio ns of commercial sale, as published at
http://www.nxp.com/profile/terms, unless other wis e
agreed in a valid written individual agreement. In case an
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purchase of NXP Semicon ductors produc ts by customer.
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Export control This document as well as the item(s)
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
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or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified prod ucts in automotive equip ment or
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In the event that customer uses the product for design-in
and use in automotive applications to automotive
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product without NXP Semiconductors’ warranty of the
product for suc h aut omo tive applications, use and
specifications, and (b) whenever customer uses the
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Semiconductors’ specifications such use sha ll be solely at
customer’s own ris k, an d (c) customer fully inde m nif i es
NXP Semiconductors for an y liability, damages or failed
product clai ms r esult ing fr om cus to mer d esi gn an d us e of
the product for automotive ap plic ations beyond NXP
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NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
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© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this do cum en t d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re liable and may be changed
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technical co ntent, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/02/pp9 Date of release: September1995
