
2SD880 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R203-013.E
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 60 V
Emitter to Base Voltage VEBO 7 V
Collector Current IC 3 A
Base Current IB 0.5 A
Power Dissipation (Derate at TC >25°C) PD 30 W
Junction Temperature TA=25 TJ 1.5 W
TC=25 30
Storage Temperature TSTG -55~+150 °C
Note: Absolute maximum ratings are thos e values beyond which the device could be permanently dam aged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage BVCEO I
C=50mA, IE=0 60 V
Collector Cut-Off Current ICBO V
CB=60V, IE=0 100 µA
Emitter Cut-Off Current IEBO V
EB=7V, IC=0 100 µA
Collector-Emitter Saturation Voltage VCE
SAT
IC=3A, IB=300mA 1 V
Base-Emitter Saturation Voltage VBE
ON
V
CE=5V, IC=500mA 1 V
DC Current Gain hFE I
C=500mA, VCE=5V 100 200
Current gain bandwidth product fT V
CE=5V, IC=500mA 3 MHZ