UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300(Max.)(VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A) *High Power Dissipation: PC=30W (Ta=25C) *Complementary to 2SB834 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL VALUE UNIT VCBO VCEO VEBO IC IB 60 60 7 3 0.5 V V V A A PD 30 W TOPR TSTG 150 -55 ~ +150 C C Maximum Voltages and currents Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Maximum Power Dissipation Total Power Dissipation Maximum Temperature Junction Temperature Range Storage Temperature Range ELECTRICAL CHARACTERISTICS(Ta=25C) PARAMETER SYMBOL TEST CONDITIONS MIN. Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Current gain bandwidth product BVCEO ICBO IEBO VCE(SAT) VBE(ON) hFE fT IC=50mA,IE=0 VCB=60V,IE=0 VEB=7V,IC=0 IC=3A, IB=300mA VCE=5V, IC=500mA IC=500mA, VCE=5V VCE =5V, IC =500mA 60 TYP. MAX. 100 100 1 1 300 60 3 UNIT V A A V V MHZ CLASSIFICATION of hFE RANK RANGE UTC O 60-120 Y 100-200 UNISONIC TECHNOLOGIES GR 150-300 CO., LTD. 1 QW-R203-013,A