UTC 2SD880 NPN EPI T AX I A L PL AN AR T R AN SI ST O R
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R203-013,A
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SD880 is designed for audio frequency power
amplifier applications.
FEATURE
*High DC Current Gain:
hFE=300(Max.)(VCE=5V,IC=0.5A)
*Low Saturation Voltage:
V
CE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)
*High Power Dissipation:
P
C=30W (Ta=25°C)
*Complementary to 2SB834
TO-220
1
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE UNIT
Maximum Voltages and currents
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 60 V
Emitter to Base Voltage VEBO 7 V
Collector Current IC 3 A
Base Current IB 0.5 A
Maximum Power Dissipation
Total Power Dissipation PD 30 W
Maximum Temperature
Junction Temperature Range TOPR 150 °C
Storage Temperature Range TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage BVCEO IC=50mA,IE=0 60 V
Collector Cut-Off Current ICBO VCB=60V,IE=0 100 µA
Emitter Cut-Off Current IEBO VEB=7V,IC=0 100 µA
Collector-Emitter Saturation Voltage VCE(SAT) IC=3A, IB=300mA 1 V
Base-Emitter Saturation Voltage VBE(ON) VCE=5V, IC=500mA 1 V
DC Current Gain hFE IC=500mA, VCE=5V 60 300
Current gain bandwidth product fT VCE =5V, IC =500mA 3 MHZ
CLASSIFICATION of hFE
RANK O Y GR
RANGE 60-120 100-200 150-300
