HIGH POWER NPN POWER TRANSISTORS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch- ing applications. Features: e Forward biased second breakdown current capability IS/b = 2.5A @ VCE=60V maximum ratings (Ta = 25C) (unless otherwise specified) 2N3772 60 VOLTS 20 AMP, 150 WATTS NPN COLLECTOR BASE zi " EMITTER CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.845(21,47) MAX r= .366(9.09) MAX 065(1.65) DIA max 7] f 7 jap SEATING PLANE 0.043(1.091 pia |b c 426(10 82) MIN 0.038(0.97) 1.050(26.68) "MAX." 0.675(17,15) 0.650(16.51) 1,197130.40) _ 177(29 90) 173(39 96) MAX CASE TEMP. REFERENCE POINT 20(5.00) BITTER BASE 0.162(4.09) pia SY 0.15(3 84) 2 HOLES 0.225(5,72) COLLECTOR 0.20515 21) (CASE) 0.440(11.18) 0,.420(10.67) RATING SYMBOL 2N3772 UNITS Collector-Emitter Voltage VcEO 60 Volts Collector-Base Voltage VcBo 100 Voits Emitter Base Voltage VEBO 7 Volts Collector Current - Continuous lo 20 A Peak lom 30 Base Current Continuous Ig 5 AD Total Power Dissipation @ To = 25C Pp 150 Watts Derate above 25C 0.855 w/?C Operating and Storage Junction Temperature Range Ty, Tsta -65 to +200 C thermal characteristics Thermal Resistance, Junction to Case Reic 1.17 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 260 C 803electrical characteristics (Tc = 25 C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX | UNIT | off characteristics Collector-Emitt taini ee oa er Sustaining Voltage VEO (sus) 60 _ _ Volts Collector-Emitter Sustaining Voltage _ _ (Ig = .2A, Vep(ott) =-1-5V, Ree = 100 Ohms) VcEX 60 Volts Collector Cutoff Current (Vcp = 100V) IcBO _ _ 5 mA Collector Cutoff Current (VcE = 50V) ICEO _ _ 10 Emitter Cutoff Current (Vep = 7V) lEBO _ _ 5 mA second breakdown | Second Breakdown with Base Forward Biased FBSOA SEE FIGURE3 on characteristics DC Current Gain hee (Io = 10A, Voce = 4V) 15 _ 60 (Ic = 20A, Voce = 4V) 5 _ _ Collector-Emitter Saturation Voltage VcE(sat) (Ic = 10A, Ig = 1.0A) _ 1.4 Vv (Ig = 20A, Ip = 4A) 4 Vv Base-Emitter Voltage VBE(on) (ic = 10A, VoE = 4V) 2.2 V 175 128 100 78 Pp, POWER DISSIPATION (WATTS) 125 Tc, CASE TEMPERATURE (C) FIGURE 1 POWER DERATING EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 804 0.02 0.05 0.17 02 05 10 20 84ctn = F(t) IC 8c = 0.875 CW MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME @ty Ta(pk) - TC = Pipk) 8c) DUTY CYCLE, D= ty/t2 ws Prpk) 50 10 20 50 100 200 500 1000 2000 TIME (ms) FIGURE 2- THERMAL RESPONSEIc, COLLECTOR CURRENT (AMP} t, TIME (5) 40 TT TI THO a NOINT S G& 140 us XN N oh | wah MN Ls 2N3772 LNCS TN CAL YS q NTS 200 us N 0 aN Sh IN | To = 25C SIN 310s 74 1.0} = BONDING WIRE LIMITED AA LL Fo om mm THERMALLY LIMITED (7S ms J 5.0F (SINGLE PULSE) + | n= SECOND BREAKDOWN LIMITED _| 5, | | | CURVES APPLY BELOW RATED VcEO \ 3.0-~SULSE CURVES APPLY 1 IN 20 FOR ALt DEVICES . | | 2N3772 7 1.0 20 30 .0 7.0 10 20 30. 50 70 100 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 3 ACTIVE-REGION SAFE OPERATING AREA Vcc =30V 5.0 tc/lg = 10 Ty = 25C VBE(off) = 2.0 10 Os 0.2 01 0.05 0.01 0.3 05 07 10 20 6030 50 70 10 20 (30 Ic, COLLECTOR CURRENT (AMP} FIGURE 5 TURN-ON TIME 2000 1000 on So ao C, CAPACITANCE (pF) ~~ s 300 200 1 0.2 05 10 2.0 vec +30V SCOPE ty, ts10 as + = DUTY CYCLE = 1.0% -4V Rg ANO Rc ARE VARIED TO. OBTAIN DESIRED CURRENT LEVELS 01 MUST BE FAST RECOVERY TYPE, eg: MBD5300 USED ABOVE tg ~100 mA MSD6100 USED BELOW Ig = 100 mA FIGURE 4 SWITCHING TIME TEST CIRCUIT 51 Dy Vec=30V Ic/tg = 10 Iet = Ip2 Ty= 25C t, TIME (us) 0305 10 2030 50 70 10 20. 30 tc, COLLECTOR CURRENT (AMP) FIGURE 6 TURN-OFF TIME 10 20 Va, REVERSE VOLTAGE (VOLTS) FIGURE 7 CAPACITANCEhee, DC CURRENT GAIN 500 300 Ty= 150C 200 25 100 70 50 30 20 10 Vee. COLLECTOR-EMITTER VOLTAGE (VOLTS) ooo .3 05 07 1.0 20 3.0 0 70 10 20 (30 Ic, COLLECTOR CURRENT (AMP) FIGURE 8 DC CURRENT GAIN 806 2.0 0.4 0 0.01 0.02 0.05 O01 02 06 10 2.0 5.0 Ic, COLLECTOR CURRENT (AMP) FIGURE 9 COLLECTOR SATURATION REGION 10