IRF620 IRF620FP N-CHANNEL 200V - 0.6 - 6A TO-220/FP PowerMeshTMII MOSFET TYPE IRF620 IRF620FP VDSS RDS(on) ID 200 V 200 V < 0.8 < 0.8 6A 6A TYPICAL RDS(on) = 0.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. 3 3 1 2 1 2 TO-220FP TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF620 VDS VDGR VGS Unit IRF620FP Drain-source Voltage (VGS = 0) 200 V Drain-gate Voltage (RGS = 20 k) 200 V Gate- source Voltage 20 V ID Drain Current (continuous) at TC = 25C 6 6 (**) ID Drain Current (continuous) at TC = 100C 3.8 3.8 (**) A Drain Current (pulsed) 24 24 A Total Dissipation at TC = 25C 70 30 W 0.56 0.24 W/C IDM (l) PTOT Derating Factor A dv/dt (1) Peak Diode Recovery voltage slope 5 5 V/ns VISO Insulation Winthstand Voltage (DC) -- 2000 V Tstg Storage Temperature Tj Max. Operating Junction Temperature (*)Pulse width limited by safe operating area August 2000 -65 to 150 C 150 C (1)ISD 6A, di/dt 300A/s, V DD V(BR)DSS, Tj TJMAX. (**) Limited only by Maximum Temperature Allowed 1/9 IRF620 / FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max TO-220 TO-220FP 1.79 4.17 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W Rthc-sink Thermal Resistance Case-sink Typ 0.5 C/W Maximum Lead Temperature For Soldering Purpose 300 C Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value Unit 6 A 160 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 Min. Typ. Max. 200 Unit V VDS = Max Rating 1 A VDS = Max Rating, TC = 125 C 50 A 100 nA Max. Unit VGS = 20 V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 3 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10 V Min. 2 Typ. 3 4 V 0.6 0.8 6 A DYNAMIC Symbol gfs (1) 2/9 Parameter Test Conditions Min. Typ. Max. Unit 1.5 4 S 350 pF Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 3A Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 Coss Output Capacitance 70 pF Crss Reverse Transfer Capacitance 35 pF IRF620 / FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 100 V, ID = 3 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 160 V, ID = 6 A, VGS = 10 V Typ. Max. Unit 18 ns 30 ns 19 27 nC 4.5 nC 7.5 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 160 V, ID = 6 A, RG = 4.7, VGS = 10 V (see test circuit, Figure 5) Typ. Max. Unit 40 ns 10 ns 65 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 6 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD =6 A, di/dt = 100 A/s VDD = 100 V, Tj = 150C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 6 A 24 A 1.5 V 155 ns 700 nC 9 A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 IRF620 / FP Thermal Impedence for TO-220 Thermal Impedence for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 IRF620 / FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 IRF620 / FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 IRF620 / FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 IRF620 / FP TO-220FP MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 B 2.5 2.7 0.098 0.181 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L5 L3 L6 F2 H G G1 F F1 L7 L2 8/9 L5 1 2 3 L4 IRF620 / FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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