OPTOELECTRONICS DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 2.54 1.27 , 0.89 TYP 0.56 C2091 0.41 DIMENSIONS IN mm PACKAGE CODE G aNoDe(1] f@]ENur. carat Feo cata [3 fe]cou. soot F_un 2085 Equivalent Circuit ss Storage temperature Operating temperature Lead temperature TOTAL INPUT 55C to 150C 55C to 100C (soldering, 10 sec.) 250C Power dissipation at 25C ambient ......... 100 mW Derate linearly from 25C ............... 1.3 mWw/C COUPLED Input to output breakdown voltage ... 2500 volts Vans Total package power dissipation @ 26C ambient.......... ccc eee eee eee 400 mw Derate linearly from 25C .............. 5.33 mW/C The MCT6X optoisolators have two channels for high density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. Two isolated channels per package m Two packages fit into a 16 lead DIP socket = Choice of 3 current transfer ratios m= Underwriters Laboratory (U.L.) recognized File E50151 AC Line/Digital Logicsolate high voltage transients B Digital Logic/Digital LogicEliminate spurious grounds Digital Logic/AC Triac ControlIsolate high voltage transients @ Twisted pair line receiverEliminate ground loop feedthrough = Telephone/Telegraph line receiverIsolate high voltage transients @ High Frequency Power Supply Feedback Control Maintain floating ground m@ Relay contact monitorlsolate floating grounds and transients m= Power Supply Monitortsolate transients INPUT DIODE (each channel) Forward current ......0 0.0... cee eee eee 60 mA Reverse voltage ................ eee eee 3.0V Peak forward current (1 us pulse, 300 pps) ...... 3A OUTPUT TRANSISTOR (each channel) Power dissipation @ 25C ambient ........ 150 mW Derate linearly from 25C ...............- 2mW/C Collector current . 0... cece eee ees 30 mA= DUAL OPTOELECTAQNICS PHOTOTRANSISTOR OPTOCOUPLERS TEST CONDITION INPUT DIODE Rated forward voltage Ve 1.25 1.50 Vv |-=20 mA Reverse voltage Va 3.0 25 v Ip=10 pA Reverse current In .001 10 pA Va=3.0 V Junction capacitance C, 50 pF V.=0V OUTPUT TRANSISTOR (I-=0) Breakdown voltage, collector to emitter BV cro 30 85 Vv l=1.0 mA Breakdown voltage, emitter to collector BVico 6 13 Vv le=100 pA Leakage current, collector to emitter leeo 5 100 nA Vce=10V Capacitance collector to emitter Coe 8 pF Voe=O0V - HA te i = : : 4 CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS TEST CONDITION COUPLED DC current transfer ratio (I,/l)=CTR MCT6 20 % Vee=10 V, -=10 mA MCT61 50 % Vce=5 V, 1-=5 mA MCT62 100 % Vce=5 V, 1=5 mA Saturation voltage collector to emitter Vor ean, MCT6, 61, 62 0.2 0.4 Vv le=2 mA, |=16 mA SYMBOL = . . TEST CONDITION SWITCHING TIMES, OUTPUT TRANSISTOR Non-saturated rise time, fall time 24 Ss le=2 MA, Vee=10 V, (Note 3) R,=1000, Non-saturated rise time, fall time 15 us le=2 MA, Vez=10 V, (Note 3) R.=1kO Saturated turn-on time (from 5.0V to 0.8) 5 Ss Ri=2KQ, |-=40 mA Saturated turn-off time (from saturation to 2.0V) 25 BS R.=2KQ, |-=40 mA Bandwidth By, 150 kHz le=2 MA, Voe=10 V, R.=1000, CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS TEST CONDITION Isolation voltage BV uo) 2500 Vaus t=1 minute Isolation resistance MCT6X Rao 10" 10 Q V.0=500 VDC Breakdown voltagechannel-to-channel CT6X 500 VDC ftelalive humidity=40% f=1 Zz Capacitance between channels 0.4 pFee DUAL OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS . 14 @ | . 1.25 T 8 13 L J Vce = 0.3V > |e VceE = 5.0V ~ T= -55C LL oe cc| = = 8.0V | > sol | Le a Se ! ae {9} uw "| Bieta vag | , 975L A B i a r d [o- 6 > 1.0 Le 2 0.50 | -_ a T=+100C "7 1 w / Z | "W) 2 | $ 0.9 | Veo > $ x 1 2 0.25 2 3 08 it z | 0102 05 1 2 5 10 20 50 100 0 FORWARD CURRENT Ir (mA) 0 5 10 15 20 C1686 IF (mA) C1679 Fig. 1. Forward Voltage vs. Fig. 2. Normalized CTR vs. Current Forward Current 1.2 T T TI 20 _ IF = 10mA-}y Voce = 0.3V |< le = 5mA} | Voce = 5.0V 18 S& ie = 20mAn | 18 al 5 ha 10 | \ 14 GS IN a ~_ sm, | t- ~ = 12 cc rt iv SS < 5 (08 aS ~ 10 1 a / / o ui / ~ 8 N 4 ; z o6l / z 4 $ 2 0.4 0 -75 -80 -25 O +25 +60 +75 +100+125 012 3 4 5 67 8 910 11 Ta (C) C1680 lp (mA) C1243 Fig. 3. Normalized CTR vs. Fig. 4. Collector Current vs. Temperature Forward Current= DUAL OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS T noe con Voce = 10V L= (See Fig. 10} RL OUTPUT NORMALIZED SWITCHING TIME 10 15 = Io (mA) C1296A Fig. 5. Switching Time vs. iC Fig. 6. Switching Time Test Circuit PULSE WIDTH = 100 us DUTY CYCLE = 10% | ton _ tot f+ 01294 Fig. 7. Switching Time Waveforms CTRo-CTR CTRo 2. The current transfer ratio (1,/I-) is the ratio of the detector collector current to the LED input current with Vex at 10 volts. 3. The frequency at which i; is 3 dB down from the 1 kHz value. 4. Rise time (t) is the time required for the collector current to increase from 10% of its final value to 90%. Fail time (t) is the time required for the collector current to decrease from 90% of ifs initial value to 10%. 1, Normalized CTR degradation =