SAMSUNG SEMICONOUCTOR_ INC: q \ MSUNG INC wye o ff eau4n42 ooorz72e.7 TIP42 SERIES we o & 7722.7 ff (TIP42/42A/42B/42C) PNP EXITAXIAL SILICON TRANSISTOR : | | s , T- Zz 3- 2/ MEDIUM POWER LINEAR ' - SWITCHING APPLICATIONS TO-220 * Complement to TIP41/41A/41B/41C : , - oy ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic . Symbol. Rating Unit Collector-Base Voitage : TIP42 Veso 40 Vv x 2 TIP42A re -60 Vv : TIP42B -80 Vv . : TiP42C , 100 V Collector-Emitter Voltage : TIP42 Voeo ~40 Vv : TIP42A |. -60 4 V~. : TIP42B . -80 Vv . >: TIP42C -100 v 1. Base 2, Collector 3. Emitter Emitter-Base Voltage Vewo -5 v Collector Current (DC) - lo ~6 A Collector Current (Pulse) Ic -10 -| A Base Current . la --2 A Cotiector Dissipation.(T.=25 C) Peo 65 W Collector Dissipation (T,=25C) Po r 2 WwW Junction Temperature Tj 150 =| C Storage Temperature Tstg / -65+150 | C ELECTRICAL CHARACTERISTICS (T.=25C) Characteristic Symbol "Test Condition Min | Max | Unit * Jollector Emitter Sustaining Voltage: TIP42 BVceo. (sus) | lo= 30mA, l=0 ~40 Vv : : TIP42A : . -60 Vv : TIP42B . 80 Vv . . : TIP42C 100] | v Coltector Cutoff Current - : TIP42/42A | ko _ | Vce=30V, la=0 -0.7 | mA : TiP42B/42C | Voe=60V, lp=0 -0.7 | mA |: Collector Cutoff Current : TIP42 lots Vce=40V, Vea=0 400] pA : TIP42A _. | Vee=-6OV, Ven=0 400 | pA : TIP42BCOC; Vce=8OV, Vea=0 -400 | pA : TIP42C Vee=100V, Veg=0 400 | pA Emitter Cutoff. Current feso Vac=5V, lo=0 -1]} mA *DC Current Gain hee Vee=4V, b= 0.3A 30 . ; Vee=4V, Io=-3A 18 75 *Colfector-Emitter Saturation Voltage Vee (sat) =6A, ls=6O0MA | -1.5] V *Base-Emitter On Voltage Vee (on) Vee=4V, b= -6A _ | -20[ Vv Current Gain Bandwidth Product fr | Vce=10V, lo=-S500mA} 3.0 MHz f=1MHz * Pulse Test: PW<300ps, Duty Cychs2% be SAMSUNG SEMICONDUCTOR 297 = - SS oe | SAMSUNG SEMICONDUCTOR INC TIP42 SERIE = ESS ee L4E O Prseease g007723-4 qT (T 1P42/42,A/42B/420) PNP EXITAXIAL SILICON TRANSISTOR 4 a BC CURRENT GAIN Ive, DC. CURRENT GAIN 3 8 a 3. og t -0.01 0.03 -0. - ~3-6 -10 L{A}, COLLECTOR CURRENT POWER DERATING Pyfw}, POWER DISSIPATION oO 100 140 160 180 200 ToC), CASE TEMPERATURE - @ I m nb Vex{sat), VerisaXV}, SATURATION VOLTAGE \ 2 T-33- BASE-EMITTER SATURATION VOL SATURATION VOLTAGE -06.03-01 -03 =1 3-5-10 0 - 100 I{A}, COLLECTOR CURRENT SAFE OPERATING AREA wad -3 -5 =10 =30 =0 -100 Veet), COLLECTOREMITTEA VOLTAGE ce SAMSUNG SEMICONDUCTOR 208SAMSUNG SEMICONDUCTGR . INC LYE OD Bo esuuzsa Goov?cy gO a TIP47/48/49/50 NPN SILICON TRANSISTOR T~ 33-1 . %, HIGH VOLTAGE AND SWITCHING APPLICATIONS 70-220 HIGH SUSTAINING VOLTAGE (Vceo(sus): 250 to 400V) 1A RETED COLLECTOR CURRENT ABSOLUTE MAXIMUM RATINGS (T,=25C) I Characteristic Symbo! Rating Unit 1 5 : Collector-Base Voltage :TIP47 | Veso 350 v * : TIP48 : 400 - Vv : -. :TIP49 450 Vv : : TIPSO 500 Vv : Collector-Emitter Voltage: TIP47 | Veo [ 250 Vv : : TIP48 ; gO] Vv : : TIP4S : 360 Vv r : TIPSO 400 v 1, Base 2. Collector 3. Emitter { Emitter-Base Voltage . Vewo 5 v [ Collector Current (DC) I 7 A | Collector Current (Pulse) Ie 2 A Base Current la 0.6 A ! Collector Dissipation (Tc=25C) | Pc 40 w Collector Dissipation (T,=25C) Pe 2 WwW : Junction Temperature Tj . 150 c ' Storage Temperature Tstg 65~150 C ELECTRICAL CHARACTERISTICS (Ta =25C) i Characteristic Symbol Test Condition Min | Max ; Unit : Collector Emitter Sustaining Voltage { Vcex(sus) : : TIP47 le=30mA, la=0 250 Vv : TIP48 300 Vv : TIP49 350 Vv : TIP50 400 Vv Collector Cutoff Current : TIP47 lceo Voe=150V, Ip=0 1 mA : TIP48 Vce=200V, =O 1 mA : TIP49 Vee=250V, Ip=0 1 | mA . : TIP5O Vce=300V, Ip=0 1 mA Collector Cutoff Current : TIP47 Ioex . Vce=350V, Vege=O0 1 mA : TIP48 . Vce=400, Vee=0 1 mA : TIP49 Vce=450V, Vee=O 1 mA : TIP50 Vce=S00V, Vee=O 1 mA Emitter Cutoff Current lego Vea=5V, In=0 1 mA *DC Current Gain bre Vece=10V, lc=0.3A 30 150 . Vee=10V, = 1A ; 10 Collector Emitter Saturation Voltage Vce(sat) Ic=TA, p=0.2A : . 1 v *Base Emitter On Voltage Vee(on) Vce=10V, lc=1A i 1.5 Vv Current Gain Bandwidth Product fr Vee=10V, le =0.2A, f=1KHz 10 MHz Turn On Time ton Vec=400V 0.5 ps Storage Time ts 5la1 =2.5ls2=l=6A 3 us Fall Time tf RL=66.72 0.3 pS * Pulse test: PW<30Dps, duty cycle < 2% Pulse 299 abe SAMSUNG SEMICONDUCTOR ._SAMSUNG SEMICONDUCTOR INC TIP47/48/49/50 % SAFE OPERATING AREA ue o PP eaeuny2 oo0r25 2 i NPN SILICON TRANSISTOR . T-33-11 COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE ov 5 Ww 2 r 2 Ba 2 & > a1 z 1 gs EB a 3 06 x 0.5 e < 9 a) 20.2 4 og s 4 gos z- 3 * o = 0.05 goos i > 0.02 0.02 oot 0.01 . 1 2 5 10 20 50 100 200: 500 1000 * 0.02 0.05 O01 2 05 1 2 4 Vee(V), GOLLECTOR-EMITTER VOLTAGE 1o(A}, COLLECTOR CURRENT DC CURRENT GAIN POWER DERATING fee, DG CURRENT GAIN PolW), POWER DISSIPATION 2 1 0.0% 0.02 0.05 O01 O02 0.5 1 2 4 tc{A), COLLECTOR CURRENT 25 60 76 100 125 180 175 200 225 250 Tc(*C}, CASE TEMPERATURE e8 samsuna SEMICONDUCTOR 300!SAMSUNG SEMICONDUCTOR IN Lue DO BeWb4b4e goo7?2b 4 | wrens . NPNCEPTIAALRAR me TIP100/101/102 . _ SILICON DARLINGTON TRANSISTOR | | | ' T-99-27 7 HIGH DC CURRENT GAIN , MIN hre=1000 @ Vce=4V, Ic=3A , _ 10-220 COLLECTOR-EMITTER. SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP105/106/107 . - ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbol Rating Unit Collector-Base Voltage : TIP100 | Vcso go. } . > TIP101- 80 Vv : TIP102 _ 100 Vv . . Collector-Emitter Voltage 1 Vero 1. Base 2. Collector 3. Emitter : : TIP100 ; 60 - Vv . > TIP101 , - 80 Vv : . . : TIP102 400 Vv : _| Emitter-Base Voltage Veso 5 Vv . Collector Current (DC) tole 8 A . c Collector Current (Pulse) Io . 15 A 0 . 7 Base Current (DC) la : 1 A . C Collector Dissipation (Ta=25C) | Pe 2 WwW Bo4 J Collector Dissipation (Tc=25C) | Po 80 w