IXFN 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS(on) = 300 V = 73 A = 45 m trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C; RGS = 1 M 300 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 73 A IDM TC = 25C, pulse width limited by TJM 292 A IAR TC = 25C 73 A EAR TC = 25C 60 mJ 2.5 J EAS dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 PD TC = 25C 10 V/ns 500 W -55 to +150 C TJM 150 C Tstg -55 to +150 C 2500 3000 V~ V~ 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 30 g TJ VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque Weight Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 300 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4.0 V 100 nA TJ = 25C TJ = 125C 25 2 A mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % 45 m miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive -faster switching * Unclamped Inductive Switching (UIS) rated * Low RDS (on) * Fast intrinsic diode * International standard package * miniBLOC with Aluminium nitride isolation for low thermal resistance * Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf) * Molding epoxies meet UL 94 V-0 flammability classification Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space savings * High power density DS98742B(1/04) (c) 2004 IXYS All rights reserved http://store.iiic.cc/ IXFN 73N30Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 * ID25, pulse test 30 55 S 5400 pF 1300 pF Crss 370 pF td(on) 37 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 36 ns td(off) RG = 1.0 (External), 82 ns 12 ns tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % t rr QRM IRM IF = 25A, -di/dt = 100 A/s, VR = 100 V Inches Min. Max. 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 42 nC 82 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 K/W G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Test Conditions Millimeter Min. Max. A B 0.05 Symbol Dim. nC 0.22 Source-Drain Diode M4 screws (4x) supplied 195 RthJC RthCK miniBLOC, SOT-227 B 73 A 292 A 1.5 V 250 ns C A 0.8 7 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 http://store.iiic.cc/ IXFN 73N30Q Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics @ 25 deg. C @ 25 Deg. C 80 180 VGS = 10V 9V 8V 7V ID - Amperes ID - Amperes 60 VGS = 10V 9V 8V 150 6V 40 20 5V 90 6V 60 30 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 3 6 V DS - Volts 9 12 15 V DS - Volts Fig. 3. Output Characteristics Fig. 4. R DS(on) Norm alized to I D25 Value vs. @ 125 Deg. C Junction Temperature 2.5 80 VGS = 10V 9V 8V 7V VGS = 10V 2.2 RDS(on) - Normalized 60 ID - Amperes 7V 120 6V 40 5V 20 1.9 1.6 ID = 73A 1.3 ID = 36.5A 1 0.7 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 V DS - Volts 0 Fig. 5. R DS(on) Norm alized to I D25 50 75 100 125 150 Fig. 6. Drain Current vs. Case Value vs. I D Tem perature 80 3.1 VGS = 10V 2.8 70 60 2.5 2.2 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade T J = 125C 1.9 1.6 1.3 50 40 30 20 T J = 25C 1 10 0.7 0 0 30 60 90 120 150 180 ID - Amperes -50 -25 0 25 50 75 100 TC - Degrees Centigrade (c) 2004 IXYS All rights reserved http://store.iiic.cc/ 125 150 IXFN 73N30Q Fig. 8. Transconductance Fig. 7. Input Adm ittance 120 150 Gfs - Siemens ID - Amperes T J = -40C 25C 125C 100 120 90 T J = -40C 25C 125C 60 30 80 60 40 20 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 30 60 V GS - Volts Voltage V GS - Volts IS - Amperes 180 210 VDS = 125V ID = 36.5A IG = 10m A 8 150 120 90 T J = 25C 6 4 2 30 0 0 0.4 0.6 0.8 1 1.2 1.4 0 50 V SD - Volts 100 150 200 QG - nanoCoulombs Fig. 12. Maxim um Transient Therm al Fig. 11. Capacitance Resistance 1 10000 C iss R(th)JC - (C/W) Capacitance - pF 150 10 180 T J = 125C 120 Fig. 10. Gate Charge Fig. 9. Source Current vs. Source-To-Drain 60 90 ID - Amperes f = 1M hz C oss 1000 0.1 C rss 100 0.01 0 10 20 V DS - Volts 30 40 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 http://store.iiic.cc/