2N6051 and 2N6052 Available PNP Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/501 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 12 amps and is military qualified up to a JANTXV level. This TO-204AA isolated package features a 180 degree lead orientation. Important: For the latest information, visit our website http://www.microsemi.com. TO-204AA (TO-3) Package FEATURES * JEDEC registered 2N6051 and 2N6052 * JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/501 * RoHS compliant versions available (commercial grade only) APPLICATIONS / BENEFITS * * * Military, space and other high reliability applications High frequency response TO-204AA case with isolated terminals o MAXIMUM RATINGS @ T C = +25 C unless otherwise noted Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Case Collector Current Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation 2N6051 2N6052 2N6051 2N6052 o @ TC = +25 C o @ TC = +100 C (1) Symbol Value TJ and TSTG R JC IC V CEO -55 to +175 1.0 -12 -80 -100 -80 -100 -5 150 75 V CBO V EBO PT Notes: 1. Derate linearly 1.0 W/oC above T C > +25 oC. T4-LDS-0306, Rev. 1 (9/6/13) Unit o C C/W A V o MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 V V W MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com (c)2013 Microsemi Corporation Page 1 of 8 2N6051 and 2N6052 MECHANICAL and PACKAGING * * * * * * CASE: Industry standard TO-204AA (TO-3), hermetically sealed, 0.040 inch diameter pins FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750 method 2026. POLARITY: PNP (see schematic) MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws WEIGHT: Approximately 15 grams See package dimensions on last page. PART NOMENCLATURE JAN 2N6051 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-RoHS Compliant JEDEC type number (see Electrical Characteristics table) Symbol IB IC IE TC V CB V CBO V CC V CE SYMBOLS & DEFINITIONS Definition Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Emitter current: The value of the dc current into the emitter terminal. Case temperature: The temperature measured at a specified location on the case of a device. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. Collector-emitter voltage: The dc voltage between the collector and the emitter. V EB Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Emitter-base voltage: The dc voltage between the emitter and the base V EBO Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. V CEO T4-LDS-0306, Rev. 1 (9/6/13) (c)2013 Microsemi Corporation Page 2 of 8 2N6051 and 2N6052 ELECTRICAL CHARACTERISTICS @ T A = +25 oC unless otherwise noted Characteristics Symbol Min. 2N6051 2N6052 V (BR)CEO -80 -100 Collector-Emitter Cutoff Current V CE = -40 V V CE = -50 V 2N6051 2N6052 I CEO -1.0 -1.0 mA Collector-Emitter Cutoff Current V CE = -80 V, V BE = 1.5 V V CE = -100 V, V BE = 1.5 V 2N6051 2N6052 I CEX -0.01 -0.01 mA I EBO -2.0 mA OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = -100 mA Emitter-Base Cutoff Current V BE = -5.0 V ON CHARACTERISTICS Forward-Current Transfer Ratio I C = -1.0 A, V CE = 3.0 V I C = -6.0 A, V CE = 3.0 V I C = -12 A, V CE = 3.0 V Collector-Emitter Saturation Voltage I C = -12 A, I B = -120 mA I C = -6.0 A, I B = -24 mA h FE Base-Emitter Saturation Voltage I C = -12 A, I B = -120 mA Base-Emitter Voltage Non-saturated V CE = -3.0 V, I C = -6 A Unit V 18,000 V CE(sat) -3.0 -2.0 V V BE(sat) -4.0 V V BE -2.8 V DYNAMIC CHARACTERISTICS Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I C = -5 A, V CE = -3.0 V, f = 1 kHz Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I C = -5 A, V CE = -3.0 V, f = 1 MHz Output Capacitance V CB = 10 V, I E = 0, f = 100 kHz f 1 MHz T4-LDS-0306, Rev. 1 (9/6/13) 1,000 1,000 150 Max. (c)2013 Microsemi Corporation hfe 1,000 |hfe| 10 C obo 250 300 pF Page 3 of 8 2N6051 and 2N6052 ELECTRICAL CHARACTERISTICS @ T C = 25 oC unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Turn-On Time V CC = -30 V, I C = -5 A; I B1 = -20 mA Turn-Off Time V CC = -30 V, I C = -5 A; I B1 = I B2 = -20 mA t on 2.0 s t off 10 s SAFE OPERATING AREA (See Figures 1 and 2 and MIL-STD-750,Test Method 3053) DC Tests T C = +25 C, +10 C, -0 C, t 1 second, 1 Cycle Test 1 V CE = -12.5 V, I C = -12 A Test 2 V CE = -30 V, I C = -5 A Test 3 V CE = -70 V, I C = -200 mA (2N6051) V CE = -90 V, I C = -155 mA (2N6052) T4-LDS-0306, Rev. 1 (9/6/13) (c)2013 Microsemi Corporation Page 4 of 8 2N6051 and 2N6052 IC = Collector Current (Amperes) SAFE OPERATING AREA V CE - Collector to Emitter Volatge (Volts) FIGURE 1 Maximum Safe Operating Area (continuous dc) T4-LDS-0306, Rev. 1 (9/6/13) (c)2013 Microsemi Corporation Page 5 of 8 2N6051 and 2N6052 IC = Collector Current (Amperes) SAFE OPERATING AREA (continued) L - Inductance (Millihenries) FIGURE 2 Safe Operating Area for Switching Between Saturation and Cutoff (unclamped inductive load). T4-LDS-0306, Rev. 1 (9/6/13) (c)2013 Microsemi Corporation Page 6 of 8 2N6051 and 2N6052 PACKAGE DIMENSIONS Ltr CD CH HR HR1 HT LD LL LL1 MHD MHS PS PS1 S1 Dimensions Inches Millimeters Min Max Min Max 0.875 22.23 0.250 0.328 6.35 8.33 0.495 0.525 12.57 13.34 0.131 0.188 3.33 4.78 0.060 0.135 1.52 3.43 0.038 0.043 0.97 1.09 0.312 0.500 7.92 12.70 0.050 1.27 0.151 0.161 3.84 4.09 1.177 1.197 29.90 30.40 0.420 0.440 10.67 11.18 0.205 0.225 5.21 5.72 0.655 0.675 16.64 17.15 Notes 3 6 4, 5, 9 4, 5, 9 5, 9 7 5 NOTES: 1. 2. 3. 4. Dimensions are in inches. Millimeters are given for information only. Millimeters are given for information only. Body contour is optional within zone defined by CD. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement shall be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. The collector shall be electrically connected to the case. 9. LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1. 10. The seating plane of the header shall be flat within .001 inch (0.03 mm), concave to .004 inch (0.10 mm), convex inside a .930 inch (23.62 mm) diameter circle on the center of the header, and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm), convex overall. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0306, Rev. 1 (9/6/13) (c)2013 Microsemi Corporation Page 7 of 8 2N6051 and 2N6052 SCHEMATIC T4-LDS-0306, Rev. 1 (9/6/13) (c)2013 Microsemi Corporation Page 8 of 8