ZXMN6A11DN8 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 60V; RDS(ON)= 0.14 ID= 2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SO8 package APPLICATIONS * DC - DC Converters * Power Management Functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN6A11DN8TA 7" 12mm 500 units ZXMN6A11DN8TC 13" 12mm 2500 units DEVICE MARKING * ZXMN 6A11D Top View ISSUE 1 - MARCH 2002 1 ZXMN6A11DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DSS Gate Source Voltage LIMIT UNIT 60 V V GS 20 V Continuous Drain Current V GS =10V; T A =25C(b) V GS =10V; T A =70C(b) V GS =10V; T A =25C(a) Pulsed Drain Current (c) ID 2.7 2.2 2.1 A I DM 8.3 A Continuous Source Current (Body Diode) (b) IS 3.2 A Pulsed Source Current (Body Diode)(c) I SM 8.3 A Power Dissipation at T A =25C (a)(d) Linear Derating Factor PD 1.25 10 mW mW/C Power Dissipation at T A =25C (a)(e) Linear Derating Factor PD 1.8 14 mW mW/C Power Dissipation at T A =25C (b)(d) Linear Derating Factor PD 2.1 17 mW mW/C Operating and Storage Temperature Range T j :T stg -55 to +150 C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(d) R JA 100 C/W Junction to Ambient (a)(e) R JA 70 C/W Junction to Ambient (b)(d) R JA 60 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction temperature. (d) For device with one active die (e) For device with two active die running at equal power. ISSUE 1 - MARCH 2002 2 ZXMN6A11DN8 CHARACTERISTICS ISSUE 1 - MARCH 2002 3 ZXMN6A11DN8 ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT 1 A 100 nA CONDITIONS. V (BR)DSS I DSS 60 Zero Gate Voltage Drain Current Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs 4.9 C iss C oss 330 pF Output Capacitance 35.0 pF Reverse Transfer Capacitance C rss 17.0 pF t d(on) tr 1.95 ns 3.5 ns t d(off) tf 8.2 ns Fall Time 4.6 ns Gate Charge Qg 3.0 nC V DS =15V, V GS =5V, I D =2.5A Total Gate Charge Qg Q gs 5.7 nC Gate-Source Charge 1.25 nC V DS =15V,V GS =10V, I D =2.5A (refer to test circuit) Gate-Drain Charge Q gd 0.86 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr STATIC Drain-Source Breakdown Voltage V 1.0 V GS =20V, V DS =0V I =250A, V DS = V GS D V GS =10V, I D =4.4A V GS =4.5V, I D =3.8A S V DS =15V,I D =2.5A V 0.14 0.25 I D =250A, V GS =0V V DS =60V, V GS =0V DYNAMIC (3) Input Capacitance V DS =40 V, V GS =0V, f=1MHz SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time V DD =15V, I D =2.5A R G =6.0,V GS =10V (refer to test circuit) SOURCE-DRAIN DIODE 0.95 V T J =25C, I S =2.8A, V GS =0V 21.5 ns 20.5 nC T J =25C, I F =2.5A, di/dt= 100A/s NOTES (1) Measured under pulsed conditions. Width300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - MARCH 2002 4 ZXMN6A11DN8 TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2002 5 ZXMN6A11DN8 TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2002 6 ZXMN6A11DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES DIM MIN MAX A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 e 0.050 BSC b 0.013 0.020 c 0.008 0.010 0 8 h 0.010 0.020 (c) Zetex plc 2002 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MARCH 2002 7