BYV29FD-600,118 - NXP Semiconductors

1. Product profile

1.1 General description

Enhanced ultrafast power diode in a SOT428 (DPAK) surface-mountable plastic package.

1.2 Features and benefits

High thermal cyclin g performance

Low on-state losses

Low thermal resi stance

Soft recovery characteristic

Surface-mountable package

1.3 Applications

Dual mode (DCM and CCM) Power

Factor Correction (PFC)

Power Factor Correction (PFC) for

Interleaved Topology

U-inverter (DC-AC converter for

individual solar panels)

1.4 Quick reference data

BYV29FD-600

Enhanced ultrafast power diode

Rev. 01 — 7 March 2011 Product data sheet

DPAK

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRRM repetitive peak

reverse voltage --600V

IF(AV) average forward

current square-wave pulse; δ=0.5;

Tmb ≤115 °C; see Figure 1;

see Figure 2

--9A

Static chara cteristics

VFforward voltage IF=8A; T

j= 25 °C; see Figure 5 - 1.45 1.9 V

IF=8A; T

j= 150 °C; see Figure 5 - 1.25 1.7 V

Dynamic characteristics

trr reverse recovery

time IF=1A; V

R=30V;

dIF/dt = 100 A/µs; Tj=25°C;

see Figure 6

-17.535ns

Product data sheet Rev. 01 — 7 March 2011 2 of 12

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

2. Pinning information

[1] It is not possible to connect to pin 2 of the SOT428 package.

3. Ordering information

4. Limiting values

Table 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphic sym bol

1 n.c. not connected

SOT428 (DPAK)

2 K cathode[1]

3 A anode

mb K mounting base; connected to cathode

001aaa020

Table 3. Ordering information

Type number Package

Name Description Version

BYV29FD-600 DPAK plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped) SOT428

Table 4. Limiting values

In accordance with the Absolute Maxi mum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse voltage - 600 V

VRWM crest working reverse voltage - 600 V

VRreverse voltage DC - 600 V

IF(AV) average forward current square-wave pulse; δ=0.5; T

mb ≤115 °C;

see Figure 1; see Figure 2 -9A

IFRM repetitive peak forward current square-wave pulse; δ=0.5; t

p= 25 µs;

Tmb ≤115 °C -18A

IFSM non-repetitive peak forward

current tp= 10 ms; sine-wave pulse; Tj(init) =25°C;

see Figure 3 -91A

tp= 8.3 ms; sine-wave pulse;

Tj(init) = 25 °C; see Figure 3 - 100 A

Tstg storage temperature -40 150 °C

Tjjunction temperature - 150 °C

Product data sheet Rev. 01 — 7 March 2011 3 of 12

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

Fig 1. Forward power dissipation as a function of

average forward curren t; square waveform;

maximum values

Fig 2. Forward power dissipation as a function of

average forward current; sinusoidal waveform;

maximum values

Fig 3. Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values

003aae718

0 5 10 15

F(AV)

(A)

tot

(W)

δ = 1

0.5

0.2

0.1

003aae719

0369

F(AV)

(A)

tot

(W) a = 1.57

1.9

2.2

2.8

4.0

003aae705

tp (s)

10-5 10-2

10-3

10-4

102

103

IFSM

(A)

101tp

Product data sheet Rev. 01 — 7 March 2011 4 of 12

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to mounting

base see Figure 4 --2.5K/W

Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse width

001aag913

−1

th(j-mb)

(K/W)

−3

−2

(s)

−6

10110

−1

−5

−3

−2

−4

δ =

Product data sheet Rev. 01 — 7 March 2011 5 of 12

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VFforward voltage IF=8A; T

j= 25 °C; see Figure 5 - 1.45 1.9 V

IF=8A; T

j= 150 °C; see Figure 5 - 1.25 1.7 V

IRreverse current VR=600V; T

j= 100 °C - - 1.5 mA

VR=600V; T

j=25°C --50µA

Dynamic character i stics

Qrrecovered charge IF=1A; V

R=30V; dI

F/dt = 100 A/µs;

see Figure 6 -13-nC

trr reverse recovery time IF=1A; V

R=30V; dI

F/dt = 100 A/µs;

Tj=25°C; see Figure 6 - 17.5 35 ns

IRM peak reverse recovery

current IF=1A; V

R=30V; dI

F/dt = 100 A/µs;

see Figure 6 -1.5-A

VFR forward recovery voltage IF=1A; dI

F/dt = 100 A/µs; see Figure 7 -3.2-V

Fig 5. Forward current as a function of forward

voltage Fig 6. Reverse recovery definitions; ramp recovery

003aad323

0123

(V)

(A)

(1) (2) (3)

003aac562

trr

time

100 %

25 %

dlF

IRIRM

Product data sheet Rev. 01 — 7 March 2011 6 of 12

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

Fig 7. Forward recovery definitions

001aab912

time

FRM

Product data sheet Rev. 01 — 7 March 2011 7 of 12

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

7. Package outline

Fig 8. Package outline SOT428 (DPAK)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT428 SC-63

TO-252

SOT42

06-02-14

06-03-16

DIMENSIONS (mm are the original dimensions)

lastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)

mounting

base

b1c

0 5 10 mm

scale

UNIT

mm 0.93

0.46

5.46

5.00

0.56

0.20

6.22

5.98

6.73

6.47

10.4

9.6

2.95

2.55

2.38

2.22

1.1

0.9

b1e1

0.89

0.71

bcD

0.9

0.5

2.285 4.57

4.0

min

4.45

min

0.5

min

HDLw

0.2

max

0.2

Product data sheet Rev. 01 — 7 March 2011 8 of 12

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

8. Soldering

Fig 9. Reflow soldering footprint for SOT428 (DPAK)

SOT428

6.15

5.80

5.90

1.80

7.00

1.30

1.50

1.40

1.65

4.57

6.00

6.125

4.725

6.50

0.30

1.00

1.15

5.65

2.302.40

2.45

3.60

6.00

5.75

4.60

solder lands

solder resist

occupied area

solder paste

Product data sheet Rev. 01 — 7 March 2011 9 of 12

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

9. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BYV29FD-600 v.1 20110307 Product data sheet - -

Product data sheet Rev. 01 — 7 March 2011 10 of 12

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

10. Legal information

10.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) desc r ibed in this document may have ch anged since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

10.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

10.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incide ntal,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or en vironmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and pro ducts using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contai ns data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document cont ains the product specification.

Product data sheet Rev. 01 — 7 March 2011 11 of 12

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to se ll product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qua lified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y

liability, damages or failed product claims result ing from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

10.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

11. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BYV29FD-600

Enhanced ultrafast power diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 7 March 2 011

Document identifier: BY V29 FD-6 00

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

12. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7

8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9

10 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

11 Contact information. . . . . . . . . . . . . . . . . . . . . .11