RPI-1040
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone, Fan herater,
Projector
Features
1) Surface Mount type
2) Optical Sensor
3) 4 Pirection Detector
4) Noise less type
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
Thin type / Surface Mount type 4 Direction Detector
DC leakage current Ileak −20 VCE=5V, IF=5mAμA
Fig.1 Forward current falloff
Fig.4 Relative output vs. ambient
temperature
Fig.3
Power dissipation / collector power
dissipation vs. ambient temperature
Fig.2 Forward current vs. forward
voltage
Fig.5 Collector current vs.
forward current
Fig.6 DC leakage current vs.
forward current
AMBIENT TEMPERATURE : Ta (°C)
FORWARD CURRENT : IF (mA)
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION : PD/PC (mW)
AMBIENT TEMPERATURE : Ta (°C)
RELATIVE COLLECTOR CURRENT : Ic (
%
)
AMBIENT TEMPERATURE : Ta (°C)
−25 0 5025 75 100
80
100
40
60
20
0
−35 −20 5 10 25 40 7055 85
120
100
80
60
20
40
0
−25 0 5025 75 100
50
60
30
40
10
20
0
COLLECTOR CURRENT : IC (mA)
FORWARD CURRENT : IF (mA)
DC LEAKAGE CURRENT : Ileak (mA)
FORWARD CURRENT : IF (mA)
0302010 5040
0
0.2
0.6
1
0.4
0.8
1.2
0
0.15
0.1
0.05
02010 4030 50
VCE=5V VCE=5V
Parameter
∗ Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
Rise time
Fall time
Symbol
VF
IR
ICEO
λ
P
IC
VCE(sat)
tr
tf
Min.
−
−
−
50 80
10
−
−
Typ.
1.1
−
−
−
10
Max.
1.3
10
0.5
−
0.4
−
Unit
VI
F=5mA
IF=50mA
VR=10V
VCE=10V
−
VCE=5V, IF=5mA
IF=5mA, IC=0.05mA
VCC=5V, Ic=0.05mA, RL=100Ω
μA
μA
μA
V
μs
−10 −μs
−950 −nm
Conditions
Maximum sensitivity wavelength
λ
P−800 −nm
Forward voltage
Reverse current
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Photo
transistor
Infrared
light
emitter
diode
Collector current
Collector-emitter saturation voltage
Response time
Dark current
FORWARD CURRENT : IF (mA)
FORWARD VOLTAGE : VF (V)
0.9 1.1 1.51.3
50
60
30
20
40
10
0
Parameter Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
−25 to +85
−30 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
V
mA
mW
°C
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input (LED)
Output
photo-
transistor
()
IF=5mA
VCE=5V
75
50
25
0
−25
°C
°C
°C
°C
°C
Dimensions (Unit : mm)
Notes:
Unspecified tolerance
shall be ±0.2 .
Fig.10 Response time measurement circuit
Fig.7 Response time vs.
load resistance Fig.9 Output characteristics
Fig.8 Dark current vs.
ambient temperature
LOAD RESISTANCE : RL (kΩ)
RESPONSE TIME : t (μs)
10%
90%
VOUT
AMBIENT TEMPERATURE : Ta (°C)
DARK CURRENT : ICEO (nA)
75−25 25
0.01
10
0.1
10000
1000
100
1
1 10 100
0
300
400
100
200
700
600
500
800
VCC=5V
IC=0.1mA
VCE=10V
tr tf
RL1
RIF
VCCinput
RL2
VOUT2
VOUT1
tr
tf
2010.04 Rev.A
0246810
0
0.4
0.3
0.2
0.1
0.5
0.6
0.7
0.8
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER VOLTAGE: VCE (V)
IF=50mA
IF=40mA
IF=30mA
IF=20mA
IF=10mA
IF=5mA
Stamp
(year, week, day of the week)
A hole
1PIN mark
Pattern
0. 8 3. 1
3. 1
2. 9
2. 9
0. 9
1. 7
0. 6
CathodeAnode
Collector 1
Emi tter 1
Collector 2
Emitter 2
Internal connecti on di agram
Detector 2 Detector 1
R1010
A
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