GaAsP photodiodes
Diffusion type photodiodes with sensitivity in the short
wavelength regions (less affected by 2nd order light)
G5842 G6262G5645
www.hamamatsu.com
Low dark current
Analytical instruments
UV detectionNarrow spectral response range
Features Applications
1
General ratings/Absolute maximum ratings
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Dimensional
outline/
Window
material
Package
Active area
size
Effective
active
area
Absolute maximum ratings
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
(mm) (mm2) (V) (°C) (°C)
G5645 /K *TO-18
0.8 × 0.8 0.58 5 -30 to +80 -40 to +85G5842 Plastic
G6262 Plastic
* Borosilicate glass
Type No.
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
1000 lx
Dark
current
ID
VR=5 V
Max.
Temp.
coeffi cient
of
ID
TCID
Rise time
tf
VR=0 V
RL=1 kΩ
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
λp
GaP
LED
560 nm
(nm) (nm)
Min.
(nA)
Typ.
(nA) (pA)
(times/°C)
(μs) (pF)
Min.
(GΩ)
Typ.
(GΩ) (W/Hz1/2)
G5645
300 to 580
470 0.28 0.05 60 90
50 1.07 3 80 10 80
2.3 × 10-15
G5842
260 to 400
370 0.06 - - 2 7.6 × 10-15
G6262
280 to 580
470 0.2 0.05 45 65 2.3 × 10-15
GaAsP photodiodes G5645, G5842, G6262
Spectral response
Photo sensitivity temperature characteristic Rise time vs. load resistance
0
0.1
0.2
0.3
0.4
0.5
200 400300 500 700600 800
(Typ. Ta=25 °C)
Wavelength (nm)
Photo sensitivity (A/W)
G5645
G6262
Wavelength (nm)
(Typ.)
Temperature coefficient (%/°C)
400200
-0.5
0
+0.5
+3.0
+2.5
+2.0
+1.5
+1.0
600 800
300 500 700
0
0.02
0.04
0.06
0.08
0.1
200 300 400
Wavelength (nm)
Photo sensitivity (A/W)
500
(Typ. Ta=25 °C)
G5842
Load resistance (Ω)
(Typ. Ta=25 °C, VR=0 V)
Rise time
103104
102
100 ns
1 µs
10 ms
1 ms
100 µs
10 µs
105106
KGPDB0029EC KGPDB0001EC
2
KGPDB0030EA KGPDB0031EA
GaAsP photodiodes G5645, G5842, G6262
3
Short circuit current linearity (G5645, G6262)
Light level (mW)
Short circuit current (mA)
12340
0
0.3
0.1
0.8
0.7
0.6
0.5
0.4
0.3
5
(Typ. Ta=25 °C, VR=0 V, RL=2 Ω, spot light size= 500 µm, λ=408 nm)
KGPDB0008EB
Dark current vs. reverse voltage Shunt resistance vs. ambient temperature
Reverse voltage (V)
(Typ. Ta=25 °C, VR=0 V)
Dark current
0.01 0.10.001
100 fA
1 pA
100 pA
10 pA
110
Ambient temperature (°C)
(Typ. VR=10 mV)
Shunt resistance
020-20
10 MΩ
1 GΩ
100 MΩ
10 TΩ
1 TΩ
100 GΩ
10 GΩ
40 60 80
KGPDB0032EA KGPDB0033EA
GaAsP photodiodes G5645, G5842, G6262
Cat. No. KGPD1004E03 Apr. 2011 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information described in this material is current as of April, 2011. Product specifications are subject to change without prior notice due to improvements or
other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
4
Dimensional outlines (unit: mm)
G5645 G5842, G6262
Borosilicate glass window may extend
a maximum of 0.1 mm beyond the
upper surface of the cap.
Connected
to case
14
2.4
3.55 ± 0.2
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
Window
3.0 ± 0.2
0.45
LEAD
(3.4)
6.5 ± 0.2
1.25 ± 0.25 1.25 ± 0.25
2.54
Active area
(3 ×) 0.5
4.0
4.0
0.65
0.1+0.2
-0.1
0.850.2
3.2
(FILTER)
4.0
4.0
4.0
3.2
(FILTER)
1.5
N/C
Cathode
Anode
Photosensitive
surface
KGPDA0012EA
KGPDA0004EA
