.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com April 2009
AH322
2W High Linearity InGaP HBT Amplifier
Product Features
• 400 – 2700 MHz
• +33 dBm P1dB
• +50 dBm Output IP3
• 13.4 dB Gain @ 2140 MHz
• 500 mA Quiescent Current
• +5 V Single Supply
• MTTF > 100 Years
• Lead-free/RoHS-compliant
SOIC-8 Package
Applications
• Final stage amplifiers for Repeaters
• High Power Amplifiers
• Mobile Infrastructure
• LTE / WCDMA / EDGE / CDMA
Product Description
The AH322 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowband-
tuned application circuits with up to +50 OIP3 and +33
dBm of compressed 1dB power. It is housed in a lead-
free/RoHS-compliant SOIC-8 package. All devices are 100%
RF and DC tested.
The AH322 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH322 is ideal for the final stage of
small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a wide
variety of other applications within the 400 to 2700 MHz
frequency band.
Functional Diagram
Function Pin No.
Iref 8
Input 3
Output / Vcc 6, 7
Vbias 1
GND Backside Paddle
GND 2, 4, 5
Specifications (1)
Parameter Units
Min Typ Max
Operational Bandwidth MHz 400 2700
Test Frequency MHz 2140
Gain dB 13.4
Input R.L. dB 14.7
Output R.L. dB 7.8
Output P1dB dBm +33
Output IP3 (2) dBm +50
WCDMA Channel Power (3)
@ -50 dBc ACLR dBm +24.1
Noise Figure dB 4.8
Vcc, Vbias V +5
Quiescent Collector Current (4) mA 500
Iref mA 30
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +21 dBm / tone separated by 1 MHz, 940
MHz. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz,
1960 MHz and 2140 MHz respectively. The suppression on the largest IM3 product is used to
calculate the OIP3 using a 2:1 rule.
3. 3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, no clipping, PAR = 10.2 dB @ 0.01%
Probability.
4. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6 and 7.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -65 to +150 °C
RF Input Power, CW, 50 Ω, T = 25ºC Input P10 dB
Device Voltage, Vcc, Vbias +8 V
Device Current 1400 mA
Device Power 8 W
Thermal Resistance, Rth 18.6 °C / W
Junction Temperature, Tj +200 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
Parameter Units Typical
Frequency MHz 940 1960 2140
Gain dB 19.4 14.1 13.4
Input Return Loss dB 18 11.3 14.7
Output Return Loss dB 8.5 11.8 7.8
WCDMA Channel Power (3)
@ -50 dBc ACLR dBm +23.6 +24.4 +24.1
Output P1dB dBm +33.0 +33.3 +33
Output IP3 (2) dBm +47.6 +50.2
+50
Noise Figure dB 8.5 4.5 4.8
Vcc, Vbias V +5
Iref mA 30
Quiescent Collector Current mA 600 500 500
Ordering Information
Part No. Description
AH322-S8G 2W High Linearity InGaP HBT Amplifier
(lead-free/RoHS-compliant SOIC-8 Pkg)
AH322-S8PCB900 920 - 960 MHz Evaluation Board
AH322-S8PCB1960 1930 - 1990 MHz Evaluation Board
AH322-S8PCB2140 2110 - 2170 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
1
2
3
4
8
7
6
5
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com April 2009
AH322
2W High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (Vcc = +5 V, Icq = 500 mA, T = 25 °C, calibrated to device leads)
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Gain and Maximum Stable Gain
-5
0
5
10
15
20
25
30
35
40
45
2.14 GHz
7.19 dB
2.14 GHz
22.7 dB
DB(MSG())
De_emebedded S_parameter
DB(|S(2,1)|)
De_emebedded S_parameter
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-
0.4
0.6
0.6
-0.
6
0.8
0.8
-0.8
S11
Swp Max
4GHz
Swp Min
0.01GHz
2.14 GHz
r 0.493722
x 0.825153
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4
.0
-4.
0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22
Swp Max
4GHz
Swp Min
0.01GHz
2.14 GHz
r 0.0838672
x 0.36526
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, [DB (S (2, 1)]. For a tuned circuit for a
particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in
the blue line [DB (GMAX)].
The impedance plots are shown from 0.01 – 4 GHz, with markers placed in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, Icq = 500 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -0.74 -174.58 29.75 109.51 -43.47 25.51 -1.15 -135.3
100 -0.53 -179.31 24.21 98.59 -43.22 17.83 -1.22 -157.31
200 -0.45 176.71 18.46 89.55 -42.49 8.135 -1.19 -170.3
400 -0.44 170.07 12.77 80.82 -42.04 5.31 -1.22 -178.39
600 -0.56 163.11 9.78 73.71 -41.41 10.52 -1.18 176.07
700 -0.61 159.9 8.73 69.49 -41.21 11.31 -1.12 173.93
800 -0.64 156.03 7.94 65.68 -40.26 12.5 -1.17 171.69
1000 -0.78 147.66 6.8 56.95 -39.65 7.88 -1.22 166.82
1200 -0.87 138.49 6.11 46.99 -38.34 2.45 -1.26 162.15
1400 -1.08 128.32 5.8 36.79 -37.99 -3.1 -1.33 157.29
1600 -1.4 117.39 5.83 25.05 -37.52 -14.57 -1.49 152.31
1800 -1.94 106.19 6.17 10.83 -37.39 -27.07 -1.46 147.31
2000 -3.2 95.9 6.8 -7.89 -37.45 -42.22 -1.41 143.05
2200 -5.84 94.01 7.36 -33.75 -38.56 -69.38 -1.21 138.4
2400 -6.52 112.96 6.5 -64.88 -41.93 -115.31 -0.9 133.24
2600 -4.45 121.06 4.77 -92.83 -41.83 167.17 -0.4 126.56
2800 -2.44 117.78 2.24 -121.06 -38.13 103.07 -0.27 119.41
3000 -1.26 108.49 -1.12 -142.85 -34.99 62.15 -0.35 112.36
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014” Getek, єr = 4.0, 4 total layers (0.062” thick) for mechanical rigidity
1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8, C5 and C2. The markers and vias are spaced in .050” increments.
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com April 2009
AH322
2W High Linearity InGaP HBT Amplifier
824 - 894 MHz Application Circuit
Typical RF Performance at 25 °
°°
°C
Frequency (MHz) units 824 848 894
Gain dB 19.7 19.7 19.7
Input Return Loss dB 16 16 13
Output Return Loss dB 7 8 12
Output P1dB dBm +33.0 +33 +32.6
Channel Power (1)
(@-55 dBc IS-95 CDMA ACPR) dBm +24.4 +24.4 +23.8
Channel Power (2)
(@ -50 dBc WCDMA ACLR) dBm +23.7 +23.7 +23
Output IP3 (3)
(21 dBm / tone, 1MHz spacing) dBm +46.2 +46.3 +45.1
Quiescent Current, Icq mA 600
Vpd (4) V +5
Vcc V +5
Notes:
1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±750 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB
@ 0.01% Prob.
2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
0.01% Probability.
3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
4. Vpd is used as device power down voltage (low = RF off).
5. The edge of L2 is placed at 265 mils from edge of AH322 RFout pin (12 º @ 850 MHz).
6. The edge of C2 is placed at 250 mils from edge of AH322 RFout pin (11 º @ 850 MHz).
7. The edge of C8 is placed at 25 mils from edge of AH322 RFout pin (1 º @ 850 MHz).
8. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
9. Zero ohm jumpers may be replaced with copper traces in the target application layout.
10. DNP implies Do Not Place.
Small Signal Performance
15
16
17
18
19
20
800 820 840 860 880 900
Frequency (MHz)
G ain (d B)
-25
-20
-15
-10
-5
0
Re tu rn L o ss (d B )
Gain S11 S22
ACLR vs. Output Power
3GPP WCDMA, TM1+64DPCH, ±5MHz offset Freq., PAR = 10.34 % @ Prob.
-60
-55
-50
-45
-40
-35
-30
20 21 22 23 24 25 26
Output Power (dBm)
ACLR (dBc)
824 MHz 848 MHz 894 MHz
ACPR vs. Output Power
IS-95 CDMA, 9 CH. Fwd., ±750 KHz offset frequency, PAR = 9.7 dB @ 0.01 % Prob
.
-70
-65
-60
-55
-50
-45
-40
20 21 22 23 24 25 26
Output Power (dBm)
ACPR (dBc)
824 MHz 848 MHz 894 MHz
OIP3 vs. Output Power
1MHz spacing, 25C
35
38
41
44
47
50
18 19 20 21 22 23 24 25 26
Output Power / tone (dBm)
OIP3 (dBm )
824 MHz 848 MHz 894 MHz
C8
C5
L2
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com April 2009
AH322
2W High Linearity InGaP HBT Amplifier
920 - 960 MHz Application Circuit (AH322-S8PCB900)
Typical RF Performance at 25 °
°°
°C
Frequency (MHz) units 920 940 960
Gain dB 19.2 19.4 19.2
Input Return Loss dB 16.6 18 15.3
Output Return Loss dB 7.8 8.5 9.4
Output P1dB dBm +33 +33 +33
Channel Power (1)
(@-55 dBc IS-95 CDMA ACPR) dBm +24.3 +24.4 +24.3
Channel Power (2)
(@ -50 dBc WCDMA ACLR) dBm +23.5 +23.6 +23.5
Output IP3 (3)
(21 dBm / tone, 1MHz spacing) dBm +47.3 +47.6 +47.2
Noise Figure dB 8.2 8.5 9
Quiescent Current, Icq mA 600
Vpd (4) V +5
Vcc V +5
Notes:
1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±885 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB
@ 0.01% Prob.
2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
0.01% Probability.
3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
4. Vpd is used as device power down voltage (low = RF off).
5. The edge of L2 is placed at 380 mils from the edge of AH322 RFout pin (19 º @ 940 MHz)
6. The edge of C2 is placed at 190 mils from the edge of AH322 RFout pin (9.5 º @ 940 MHz).
7. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
8. 0 Ω jumpers may be replaced with copper traces in the target application layout.
9. DNP implies Do Not Place.
Small Signal Performance
25 C
15
16
17
18
19
20
920 930 940 950 960
Frequency (MHz)
G ain (d B )
-25
-20
-15
-10
-5
0
R e tu rn L o s s (dB )
S21 S11 S22
ACLR vs. Channel Power
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 940 MHz
-60
-55
-50
-45
-40
-35
-30
17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
ACLR (dB m )
+25C -40C +85C
ACLR vs. Channel Power
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C
-60
-55
-50
-45
-40
-35
-30
17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
ACLR (dBc)
920 MHz
940 MHz
960 MHz
ACPR vs. Channel Power
IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 940 MHz
-80
-75
-70
-65
-60
-55
-50
-45
-40
17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
ACPR (dBc)
+25C -40C +85C
ACPR vs. Channel Power
IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 25C
-80
-75
-70
-65
-60
-55
-50
-45
-40
17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
AC PR (dBc)
920 MHz 940 MHz 960 MHz
Gain vs. Pout vs. Temp
Freq. = 940 MHz
15
16
17
18
19
20
21
27 28 29 30 31 32 33 34
Pout (dBm)
G a in (d B )
25C -40C +85C
C8
C5
L2
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com April 2009
AH322
2W High Linearity InGaP HBT Amplifier
Performance Plots for AH322-S8PCB900 contd.
OIP3 vs. Channel Power
Freq. = 940, 941 MHz, 1MHz spacing
35
40
45
50
55
16 17 18 19 20 21 22 23
Output Power / Tone (dBm)
OIP3 (d bm )
25C -40C 85C
OIP3 vs. Channel Power
1 MHz spacing, 25 C
35
40
45
50
55
16 17 18 19 20 21 22 23
Output Power / Tone (dBm)
OIP3 (dB m)
920 MHz 940 MHz 960 MHz
Noise Figure vs. Frequency
25C
0
2
4
6
8
10
920 930 940 950 960
Frequency (MHz)
N F (dB)
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com April 2009
AH322
2W High Linearity InGaP HBT Amplifier
1930 - 1990 MHz Application Circuit (AH322-S8PCB1960)
Typical RF Performance at 25 °
°°
°C
Frequency (MHz) units 1930 1960 1990
Gain dB 13.8 14.1 14.2
Input Return Loss dB 11.8 11.3 10.8
Output Return Loss dB 9 11.8 15.4
Output P1dB dBm +33.2 +33.3 +33.1
Channel Power (1)
(@ -50 dBc WCDMA ACLR) dBm +23.9 +24.4 +23.7
Output IP3 (2)
(24 dBm / tone, 1MHz spacing) dBm +47.2 +50.2 +46.7
Noise Figure dB 4.5
Quiescent Current, Icq mA 500
Vpd (4) V +5
Vcc V +5
Notes:
1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
0.01% Probability.
2. OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing.
3. The multilayer inductor L3 (82nH) is critical for linearity performance.
4. Vpd is used as device power down voltage (low = RF off).
5. The edge of C5 is placed at 247 mils from the edge of AH322 RFout pin (11 º @ 1960 MHz).
6. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
7. 0 Ω jumpers may be replaced with copper traces in the target application layout.
8. DNP implies Do Not Place.
Small Signal Performance
25 C
10
11
12
13
14
15
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
G a in ( d B )
-25
-20
-15
-10
-5
0
R e t u rn L o s s ( dB )
S21 S11 S22
ACLR vs. Channel Power
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 1960 MHz
-65
-60
-55
-50
-45
-40
-35
20 21 22 23 24 25 26 27
Output Channel Power (dBm)
A C LR (dB c)
+25C -40C +85C
ACLR vs. Output Power
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C
-65
-60
-55
-50
-45
-40
-35
20 21 22 23 24 25 26 27
Output Channel Power (dBm)
AC LR (d B c)
1930 MHz 1960 MHz 1990 MHz
Gain vs. Pout vs. Temp
Frequency = 1960 MHz
10
11
12
13
14
15
16
27 28 29 30 31 32 33 34
Pout (dBm)
G ain (dB )
+25C -40C +85C
OIP3 vs. Output Power
1 MHz spacing, 1960 MHz
35
40
45
50
55
20 21 22 23 24 25 26 27
Output Power / Tone (dBm)
OIP3 (dBm )
+25C -40C +85C
OIP3 vs Channel Power
1 MHz spacing, 25C
35
40
45
50
55
20 21 22 23 24 25 26 27
Output Power / Tone (dBm)
O IP 3 (dB m )
1930 MHz 1960 MHz 1990 MHz
C8
C5
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com April 2009
AH322
2W High Linearity InGaP HBT Amplifier
2110 - 2170 MHz Application Circuit (AH322-S8PCB2140)
Typical RF Performance at 25 °
°°
°C
Frequency (MHz) units 2110 2140 2170
Gain dB 13.1 13.4 13.6
Input Return Loss dB 15 14.7 14.2
Output Return Loss dB 6.3 7.8 10
Output P1dB dBm +33
Channel Power (1)
(@ -50 dBc WCDMA ACLR) dBm +24.1 +24.1 +23.8
Output IP3 (2)
(24 dBm / tone, 1MHz spacing) dBm +50.1 +50 +48.4
Noise Figure dB 4.7 4.8 4.7
Quiescent Current, Icq mA 500
Vpd (4) V +5
Vcc V +5
Notes:
1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
0.01% Probability.
2. OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing.
3. The multilayer inductor L3 (82 nH) is critical for linearity performance..
4. Vpd is used as device power down voltage (low = RF off).
5. The edge of C5 is placed at 195 mils from the edge of AH322 RFout pin (22 º @ 2140 MHz).
6. The edge of C8 is placed at 0.5 mils from the edge of AH322 RFout pin (0 º @ 2140 MHz).
7. Zero ohm jumpers may be replaced with copper traces in the target application layout.
8. DNP means Do Not Place.
Small Signal Performance
25C
9
10
11
12
13
14
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S 2 1 (d B )
-25
-20
-15
-10
-5
0
R e tu r n L o s s (d B )
S21 S11 S22
ACLR vs. Channel Power
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 2140 MHz
-65
-60
-55
-50
-45
-40
-35
20 21 22 23 24 25 26 27
Output Channel Power (dBm)
AC LR (dB c)
+25C
-40C
+85C
ACLR vs. Channel Power
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C
-65
-60
-55
-50
-45
-40
-35
20 21 22 23 24 25 26 27
Output Channel Power (dBm)
ACL R (dB c)
2110 MHz
2140 MHz
2170 MHz
Gain vs. Pout vs. Temp
Frequency = 2140 MHz
9
10
11
12
13
14
15
27 28 29 30 31 32 33 34
Pout (dBm)
G ain (dB )
+25C -40C +85C
OIP3 vs. Output Power
1 MHz spacing, 25C
35
40
45
50
55
19 20 21 22 23 24 25 26 27
Output Power / Tone (dBm)
OIP3 (dBm)
2110 MHz
2140 MHz
2170 MHz
OIP3 vs Channel Power
1 MHz spacing, 25C
35
40
45
50
55
19 20 21 22 23 24 25 26
27
Output Power / Tone (dBm)
OIP3 (d Bm )
+25C -40C +85C
C8
C5
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com April 2009
AH322
2W High Linearity InGaP HBT Amplifier
Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill
and have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contact the
heatsink.
5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters (inches). Angles are in degrees.
Product Marking
The component will be marked with an
“AH322G” designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1A
Value: Passes ≥ 250V to < 500V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class III
Value: Passes ≥ 1000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Functional Diagram
Function Pin No.
Iref 8
Input 3
Output / Vcc 6, 7
Vbias 1
GND Backside Paddle
GND 2, 4, 5
1
2
3
4
8
7
6
5
