R5009FNX Nch 500V 9A Power MOSFET Datasheet lOutline VDSS 500V RDS(on) (Max.) 0.84W ID 9A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Type Switching Power Supply Bulk Reel size (mm) - Tape width (mm) - Basic ordering unit (pcs) Taping code 500 - Marking R5009FNX lAbsolute maximum ratings(Ta = 25C) Parameter Symbol Value Unit VDSS 500 V Tc = 25C ID *1 9 A Tc = 100C ID *1 4.4 A 36 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 5.4 mJ Avalanche energy, repetitive EAR *4 3.5 mJ Avalanche current IAR *3 4.5 A Power dissipation (Tc = 25C) PD 50 W Junction temperature Tj 150 C Tstg -55 to +150 C dv/dt *5 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.07 - Rev.B Data Sheet R5009FNX lAbsolute maximum ratings Parameter Symbol Drain - Source voltage slope dv/dt Conditions VDS = 400V, ID = 9A Tj = 125C Values Unit 50 V/ns lThermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 2.5 C/W Thermal resistance, junction - ambient RthJA - - 70 C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 C lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Values Typ. Max. 500 - - V - 580 - V Tj = 25C - 1 100 Tj = 125C - - 10 mA IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 2 - 4 V - 0.65 0.84 W Tj = 125C - 1.37 - f = 1MHz, open drain - 8.2 - Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 9A VDS = 500V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Unit Min. IDSS mA VGS = 10V, ID = 4.5A Static drain - source on - state resistance Gate input resistance www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. RDS(on) *6 Tj = 25C RG 2/13 W 2012.07 - Rev.B Data Sheet R5009FNX lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Values Min. Typ. Max. 4.0 5.7 - Transconductance gfs *6 VDS = 10V, ID = 4.5A Input capacitance Ciss VGS = 0V - 630 - Output capacitance Coss VDS = 25V - 400 - Reverse transfer capacitance Crss f = 1MHz - 25 - Effective output capacitance, energy related Co(er) - 41.5 - Effective output capacitance, time related Turn - on delay time Co(tr) td(on) *6 tr *6 Rise time Turn - off delay time td(off) *6 tf *6 Fall time VGS = 0V VDS = 0V to 400V Unit S pF pF - 40.4 - VDD 250V, VGS = 10V - 24 - ID = 4.5A - 20 - RL = 55.6W - 50 100 RG = 10W - 40 80 ns lGate Charge characteristics(Ta = 25C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Qg *6 VDD 250V - 18 - Gate - Source charge Qgs *6 ID = 9A - 3.5 - Gate - Drain charge Qgd *6 VGS = 10V - 5.5 - Gate plateau voltage V(plateau) VDD 250V, ID = 9A - 5.8 - Unit nC V *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 L 500mH, VDD = 50V, RG = 25W, starting Tj = 25C *4 L 500mH, VDD = 50V, RG = 25W, starting Tj = 25C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 3/13 2012.07 - Rev.B Data Sheet R5009FNX lBody diode electrical characteristics (Source-Drain)(Ta = 25C) Parameter Symbol Inverse diode continuous, forward current Values Conditions IS *1 Unit Min. Typ. Max. - - 9 A - - 36 A - - 1.5 V 48 78 108 ns - 0.2 - mC - 5.2 - A - 610 - A/ms Tc = 25C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *6 trr *6 Reverse recovery time Reverse recovery charge Qrr *6 Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt VGS = 0V, IS = 9A IS = 9A di/dt = 100A/us Tj = 25C lTypical Transient Thermal Characteristics Symbol Value Rth1 0.263 Rth2 0.977 Rth3 2.18 www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Unit Cth1 0.00166 Cth2 0.0191 Cth3 0.46 Ws/K 2012.07 - Rev.B Data Sheet R5009FNX lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 PW = 100ms 100 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 20 0 0 50 100 150 PW = 10ms Operation in this area is limited by RDS(on) 0.1 0.01 200 PW = 1ms 1 Ta=25C Single Pulse 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 10 Ta = 25C Single Pulse Rth(ch-a)(t) = (t)xRth(ch-a) Rth(ch-a) = 70C/W 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.001 0.0001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 5/13 2012.07 - Rev.B Data Sheet R5009FNX lElectrical characteristic curves Fig.5 Avalanche Power Losses Fig.4 Avalanche Current vs Inductive Load 5000 6 Ta = 25C VDD = 50V , RG = 25W VGF = 10V , VGR = 0V 4500 Avalanche Power Losses : PAR [W] Avalanche Current : IAR [A] 5 4 3 2 1 0 0.01 0.1 1 10 100 Coil Inductance : L [mH] Ta = 25C 4000 3500 3000 2500 2000 1500 1000 500 0 1.0E+04 1.0E+05 1.0E+06 Frequency : f [Hz] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [C] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 6/13 2012.07 - Rev.B Data Sheet R5009FNX lElectrical characteristic curves Fig.8 Typical Output Characteristics(II) Fig.7 Typical Output Characteristics(I) 10 VGS= 10V VGS= 6.5V 5 Ta= 25C Pulsed VGS= 6.0V Drain Current : ID [A] Drain Current : ID [A] 4 Ta= 25C Pulsed VGS= 5.5V 5 VGS= 5.0V VGS= 4.5V 0 0 10 20 30 40 VGS= 5.5V 3 2 VGS= 5.0V 1 0 50 VGS= 10V VGS= 6.0V VGS= 4.5V 0 VGS = 6.5V 4 Drain Current : ID [A] Drain Current : ID [A] VGS = 5.5V VGS = 4.5V 0 10 20 30 40 3 VGS = 10V VGS = 6.0V VGS = 5.0V 2 VGS = 4.5V 1 0 50 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 10 Ta = 150C Pulsed VGS = 5.0V 0 8 5 Ta = 150C Pulsed VGS = 6.0V 5 6 Fig.10 Tj = 150C Typical Output Characteristics(II) Fig.9 Tj = 150C Typical Output Characteristics(I) VGS = 10V 4 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] 10 2 7/13 2012.07 - Rev.B Data Sheet R5009FNX Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics 800 100 750 700 650 600 -50 0 50 100 0.1 0.01 0.001 150 Ta = 125C Ta= 75C Ta= 25C Ta= - 25C 1 550 500 VDS= 10V Pulsed 10 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] lElectrical characteristic curves 0 Junction Temperature : Tj [C] Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 10 3 . 2 1 0 50 100 5 6 7 VDS= 10V Pulsed Ta= - 25C Ta= 25C Ta= 75C Ta = 125C 1 0.1 0.01 0.01 150 Junction Temperature : Tj [C] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 4 100 VDS= 10V ID=1mA -50 3 Fig.14 Transconductance vs. Drain Current 5 0 2 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature 4 1 0.1 1 10 100 Drain Current : ID [A] 8/13 2012.07 - Rev.B Data Sheet R5009FNX lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 2 Ta = 25C Pulsed 1.5 1 ID= 9A 0.5 0 ID= 4.5A 0 5 10 15 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] 2 Gate - Source Voltage : VGS [V] VGS= 10V Pulsed 1.5 ID= 9A 1 ID= 4.5A 0.5 0 -50 0 50 100 150 Junction Temperature : Tj [C] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [W] 10 Ta = 125C Ta = 75C Ta= 25C Ta = - 25C Ta = 25C Pulsed 1 0.1 0.1 1 10 100 Drain Current : ID [A] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 9/13 2012.07 - Rev.B Data Sheet R5009FNX lElectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy 10000 5 Ta = 25C Coss Stored Energy : EOSS [uJ] Ciss Capacitance : C [pF] 1000 100 Crss 10 1 Coss Ta = 25C f = 1MHz VGS = 0V 0.01 0.1 1 10 100 4 3 2 1 0 1000 0 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics 12 10000 1000 tf 100 Ta= 25C VDD = 250V VGS = 10V RG = 10W Pulsed 10 Gate - Source Voltage : VGS [V] td(off) Switching Time : t [ns] 400 Drain - Source Voltage : VDS [V] Fig.20 Switching Characteristics td(on) 10 tr 1 200 0.01 0.1 1 10 100 6 4 Ta= 25C VDD = 250V ID = 9A Pulsed 2 0 0 5 10 15 20 25 30 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 8 10/13 2012.07 - Rev.B Data Sheet R5009FNX lElectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 Ta= 25C Pulsed VGS= 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 1 Ta = 125C Ta= 75C Ta= 25C Ta= - 25C 0.1 0.01 0 0.5 1 10 1.5 Source - Drain Voltage : VSD [V] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 100 0.1 1 10 100 Inverse Diode Forward Current : IS [A] 11/13 2012.07 - Rev.B Data Sheet R5009FNX lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 12/13 2012.07 - Rev.B Data Sheet R5009FNX lDimensions (Unit : mm) D TO-220FM E A E1 A1 A A2 A4 F p b1 L Q c e b DIM A A1 A2 A4 b b1 c D E e E1 F L p Q x x A MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.381 INCHES MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.39 0.173 MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189 0.10 0.106 0.11 0.453 0.118 0.083 - 0.118 0.126 0.492 0.134 0.122 0.015 Dimension in mm/inches www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 13/13 2012.07 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. R1120A Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: R5009FNX