Datasheet
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
R5009FNX
Nch 500V 9A Power MOSFET
Tj
°C
mJ
EAR
*4
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
4.5
EAS *3
3.5
mJ
PD
50
5.4
ID,pulse
*2
ID
*1
4.4
A
A
V
30
V/ns
150
Reverse diode dv/dt
IAR
*3
Range of storage temperature
Tstg
Power dissipation (Tc = 25°C)
°C
W
Junction temperature
A
dv/dt *5
15
-55 to +150
Unit
500
VDSS
ID
*1
A
9
Value
Symbol
V
VGSS
36
Continuous drain current
Basic ordering unit (pcs)
Pulsed drain current
Gate - Source voltage
Parameter
Packaging
Tc = 25°C
Taping code
lAbsolute maximum ratings(Ta = 25°C)
Marking
Tc = 100°C
Drain - Source voltage
lFeatures
500V
0.84W
50W
9A
5) Parallel use is easy.
VDSS
Switching Power Supply
RDS(on) (Max.)
ID
PD
1) Low on-resistance.
6) Pb-free lead plating ; RoHS compliant
lOutline
lInner circuit
lPackaging specifications
TO-220FM
2) Fast switching speed.
Tape width (mm)
-
3) Gate-source voltage (VGSS) guaranteed to be 30V.
lApplication
Reel size (mm)
Bulk
-
500
-
R5009FNX
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
(1)
(2)
(3)
1/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
W
Gate input resistance
RG
f = 1MHz, open drain
8.2
Static drain - source
on - state resistance
RDS(on)
*6
W
Tj = 25°C
0.65
Tj = 125°C
1.37
VGS = 10V, ID = 4.5A
Gate threshold voltage
VGS (th)
VDS = 10V, ID = 1mA
Gate - Source leakage current
VGS = 30V, VDS = 0V
-
580
Tj = 25°C
Drain - Source avalanche
breakdown voltage
IDSS
IGSS
V(BR)DS
-
V(BR)DSS
1
V
Symbol
-
Unit
°C/W
-
VGS = 0V, ID = 9A
VGS = 0V, ID = 1mA
Values
V
°C/W
Unit
-
nA
V/ns
Tj = 125°C
Tj = 125°C
V
RthJC
mA
mA
Parameter
Zero gate voltage
drain current
-
lAbsolute maximum ratings
lThermal resistance
Thermal resistance, junction - case
Parameter
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
lElectrical characteristics(Ta = 25°C)
Drain - Source voltage slope
dv/dt
VDS = 400V, ID = 9A
Typ.
Symbol
Conditions
-
Unit
Tsold
RthJA
Symbol
Parameter
Drain - Source breakdown
voltage
VDS = 500V, VGS = 0V
Conditions
Values
Typ.
°C
2/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C
*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
Reverse transfer capacitance
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Typ.
5.7
Transconductance
Input capacitance
Output capacitance
Coss
VDS = 25V
S
Ciss
VGS = 0V
630
gfs
*6
VDS = 10V, ID = 4.5A
pF
pF
41.5
40.4
Crss
f = 1MHz
25
400
Turn - on delay time
td(on)
*6
VDD ⋍ 250V, VGS = 10V
Effective output capacitance,
energy related
Effective output capacitance,
time related
Co(er)
Co(tr)
VGS = 0V
VDS = 0V to 400V
ns
50
40
24
RG = 10W
RL = 55.6W
lGate Charge characteristics(Ta = 25°C)
Rise time
tr
*6
ID = 4.5A
Symbol
Values
20
Typ.
Turn - off delay time
td(off)
*6
Fall time
tf
*6
Total gate charge
Gate - Source charge
Qgs
*6
ID = 9A
Qg
*6
VDD ⋍ 250V
VGS = 10V
Unit
3.5
nC
18
Conditions
5.5
Parameter
5.8
V
Gate plateau voltage
V(plateau)
VDD ⋍ 250V, ID = 9A
Gate - Drain charge
Qgd
*6
3/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
A
A
A
V
ns
Rth1
Peak rate of fall of reverse
recovery current
dirr/dt
Symbol
Value
lTypical Transient Thermal Characteristics
610
Symbol
Value
Unit
Rth3
2.18
Cth3
0.46
A/ms
Tj = 25°C
0.00166
Ws/K
Rth2
0.977
Cth2
0.0191
0.263
Cth1
-
Qrr
*6
Irrm
*6
IS *1
ISM *2
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
0.2
mC
VSD
*6
VGS = 0V, IS = 9A
Typ.
Forward voltage
Reverse recovery time
Tc = 25°C
IS = 9A
di/dt = 100A/us
78
-
Unit
Peak reverse recovery current
Parameter
Symbol
Conditions
Values
Reverse recovery charge
trr
*6
-
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
5.2
4/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
lElectrical characteristic curves
0
20
40
60
80
100
120
050 100 150 200
0.0001
0.001
0.01
0.1
1
10
100
1000
0.0001 0.01 1 100
T
a = 25ºC
Single Pulse
R
th(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
Fig.1 Power Dissipation Derating Curve
Power Dissipation : PD/PD max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r(t)
Pulse Width : PW [s]
0.01
0.1
1
10
100
0.1 1 10 100 1000
Operation in this area
is limited by RDS(on)
PW = 100ms
PW = 1ms
Ta=25ºC
Single Pulse
PW = 10ms
5/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
lElectrical characteristic curves
0
1
2
3
4
5
6
0.01 0.1 1 10 100
Ta = 25ºC
VDD = 50V , RG = 25W
VGF = 10V , VGR = 0V
0
20
40
60
80
100
120
025 50 75 100 125 150 175
Fig.4 Avalanche Current vs Inductive Load
Avalanche Current : IAR [A]
Coil Inductance : L [mH]
Fig.5 Avalanche Power Losses
Avalanche Power Losses : PAR [W]
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : EAS / EAS max. [%]
Junction Temperature : Tj [ºC]
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
1.0E+04 1.0E+05 1.0E+06
Ta = 25ºC
6/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
lElectrical characteristic curves
Fig.7 Typical Output Characteristics(I)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.8 Typical Output Characteristics(II)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
0
5
10
010 20 30 40 50
VGS= 4.5V
Ta= 25ºC
Pulsed
VGS= 5.0V
VGS= 5.5V
VGS= 6.0V
VGS= 6.5V
VGS= 10V
0
1
2
3
4
5
0246810
VGS= 4.5V
VGS= 5.0V
VGS= 5.5V
VGS= 6.0V
VGS= 10V
Ta= 25ºC
Pulsed
0
5
10
010 20 30 40 50
Ta = 150ºC
Pulsed
VGS = 5.5V
VGS = 6.0V
VGS = 4.5V
VGS = 10V VGS = 6.5V
VGS = 5.0V
0
1
2
3
4
5
0 1 2 3 4 5
VGS = 4.5V
VGS = 10V
VGS = 5.0V
VGS = 6.0V
Ta = 150ºC
Pulsed
7/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
lElectrical characteristic curves
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS= 10V
Pulsed
Ta= - 25ºC
Ta= 25ºC
Ta= 75ºC
Ta = 125ºC
0.001
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7
VDS= 10V
Pulsed
Ta = 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= - 25ºC
Fig.11 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V(BR)DSS [V]
Junction Temperature : Tj [°C]
Fig.12 Typical Transfer Characteristics
Drain Current : ID [A]
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : VGS(th) [V]
Junction Temperature : Tj [°C]
Fig.14 Transconductance vs. Drain Current
Drain Current : ID [A]
Transconductance : gfs [S]
500
550
600
650
700
750
800
-50 0 50 100 150
0
1
2
3
4
5
-50 0 50 100 150
.
VDS= 10V
ID=1mA
8/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
lElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: RDS(on) [W]
Gate - Source Voltage : VGS [V]
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [W]
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
Static Drain - Source On-State Resistance
: RDS(on) [W]
Drain Current : ID [A]
0.1
1
10
0.1 1 10 100
Ta = 125ºC
Ta = 75ºC
Ta= 25ºC
Ta = - 25ºC
Ta = 25ºC
Pulsed
0
0.5
1
1.5
2
0 5 10 15
Ta = 25ºC
Pulsed
ID= 4.5A
ID= 9A
0
0.5
1
1.5
2
-50 0 50 100 150
VGS= 10V
Pulsed
ID= 4.5A
ID= 9A
9/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
lElectrical characteristic curves
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
Coss
Ta = 25ºC
f = 1MHz
VGS = 0V
Crss
Ciss
1
10
100
1000
10000
0.01 0.1 1 10 100
Ta= 25ºC
VDD = 250V
VGS = 10V
RG = 10W
Pulsed
td(off)
tf
td(on)
tr
0
1
2
3
4
5
0 200 400
Ta = 25ºC
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.19 Coss Stored Energy
Coss Stored Energy : EOSS [uJ]
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID [A]
Fig.21 Dynamic Input Characteristics
Gate - Source Voltage : VGS [V]
Total Gate Charge : Qg [nC]
0
2
4
6
8
10
12
0 5 10 15 20 25 30
Ta= 25ºC
VDD = 250V
ID = 9A
Pulsed
10/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
lElectrical characteristic curves
0.01
0.1
1
10
100
0 0.5 1 1.5
Ta = 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= - 25ºC
VGS= 0V
Pulsed
10
100
1000
0.1 1 10 100
Ta= 25ºC
Pulsed
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Inverse Diode Forward Current : IS [A]
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
11/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform
12/13
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5009FNX
lDimensions (Unit : mm)
Dimension in mm/inches
TO-220FM
MIN MAX MIN MAX
A 16.60 17.60 0.654 0.693
A1 1.80 2.20 0.071 0.087
A2 14.80 15.40 0.583 0.606
A4 6.80 7.20 0.268 0.283
b 0.70 0.85 0.028 0.033
b1 1.10 1.50 0.043 0.059
c 0.70 0.85 0.028 0.033
D 9.90 10.30 0.39 0.406
E 4.40 4.80 0.173 0.189
e
E1 2.70 3.00 0.106 0.118
F 2.80 3.20 0.11 0.126
L 11.50 12.50 0.453 0.492
p 3.00 3.40 0.118 0.134
Q 2.10 3.10 0.083 0.122
x - 0.381 - 0.015
2.54
0.10
DIM
MILIMETERS
INCHES
D
b1
E1
E
e
b
c
F
A2A1
AL
x A
A4
φp
Q
A
13/13
2012.07 - Rev.B
R1120A
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Notice
ROHM Customer Support System
http://www.rohm.com/contact/
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
ROHM Semiconductor:
R5009FNX