TIP140/141/142
TIP145/146/147
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
TIP141, TIP142, TIP145 AND TIP147 ARE
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MON OLI T HIC DA RLING T O N
CONF IG U R ATIO N
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP140, TIP141 and TIP142 are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration, mounted in
TO-218 plastic package. They are intented for
use in power linear and switching applications.
The complementary PNP types are TIP145,
TIP1 46 and TIP147 respectively .
®
INT E R NAL SCH E M ATI C DIAG RA M
March 2000
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP140 TIP141 TIP142
PNP TIP145 TIP146 TIP147
VCBO Collector-Base Voltage (IE = 0) 60 80 100 V
VCEO Collector-Emitter Volta ge (IB = 0) 60 80 100 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 10 A
ICM Collector Peak Current 20 A
IBBase Current 0.5 A
Ptot Total Dissipation at Tcase 25 oC 125 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types volt age and current values a re negative.
R1 Typ. = 5 K R2 Typ. = 150
123
TO-218
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) for TIP140/145 VCB = 60 V
for TIP141/146 VCB = 80 V
for TIP142/147 VCB = 100 V
1
1
1
mA
mA
mA
ICEO Collector Cut-off
Current (IB = 0) for TIP140/145 VCE = 30 V
for TIP141/146 VCE = 40 V
for TIP142/147 VCE = 50 V
2
2
2
mA
mA
mA
IEBO Emitter Cut-off Cu rrent
(IC = 0) VEB = 5 V 2 mA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA
for TIP140/145
for TIP141/146
for TIP142/147
60
80
100
V
V
V
VCE(sat)* Collector-Emitter
Saturation Voltage IC = 5 A IB = 10 mA
IC = 10 A IB = 40 mA 2
3V
V
VBE(on)* Base-Emitter Voltag e IC = 10 A VCE = 4 V 3 V
hFE* DC Current Gain IC = 5 A VCE = 4 V
IC = 10 A VCE = 4 V 1000
500
ton
toff
RESISTIVE LOAD
Turn-on Time
Turn-off Time
IC = 10 A IB1 = 40 mA
IB2 = -40 mA R L = 3 0.9
4µs
µs
For PNP types volt ag e and c urrent values are negativ e.
Pulsed: Pulse durat ion = 300 µs, duty cycle 1.5 %
TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R 12.2 0.480
Ø 4 4.1 0.157 0.161
R
A
C
D
E
H
FG
L6
¯
L3
L2
L5
12 3
TO-218 (SOT-93) MECHANICAL DATA
P025A
TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird part ies which may resu lt from its use . No li cen s e i s
granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replac es all information previously supplie d. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
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