SANYO SEMICONDUCTOR CORP ecE D MM 7997076 O00704e T A T-27-09F A . PNP/NPN Epitaxial Planar 2018A Silicon Transistors @10578 1 00 Features High-Volta age Switching, AF Power Amp, Output Predriver Applications Very smail-sized package permitting the 25A1257/2SC3143-applied sets to be made small and slim - High breakdown voltage (Vcro=160V)_ - - Small output capacitance ( ):25A1257 Absolute Maximum Ratings at Ta= 25C unit Collector to Base Voltage Voso (-)180 v Collector to Emitter Voltage Vcoro (-)160 Vv Emitter to Base Voltage VEBO ()5 Vv Collector Current Ig ()80 mA Peak Collector Current icp ()150 mA Collector Dissipation Po 200 mW Junction Temperature Tj 125 =C Storage Temperature Tstg -55to+125 C Electrical Characteristics at Ta= 25C min typ max unit Collector Cutoff Current IcrRo Vop=()120V In =0 (-)0.1 pA Emitter CutoffCurrent Ippo Vep=()4V,Ig=0 (-)0.1 pA DC Current Gain hre Vor=()5V,I=()10mA 603K 270K Gain-Bandwidth Product fp Vor=(-)10V Ig=()10mA (130) MHz 150 Output Capacitance Cob Vep=()10V,f= 1MHz (2.4) (3.2) pF 2.0 2.8 Base to Emitter Voltage Vpp Ver =()5V, Ic=()10mA ()1.5 Vv C-E Saturation Voltage Vorsaty Ic=()30mA,Ip=()3mA ()0.7 Vv C-B Breakdown Voltage Visrycpo Ic=()10pA,Ig=0 ()180 Vv C-E Breakdown Voltage Vigryczeo Ic=()imA,Rgg= ()160 Vv E-B Breakdown Voltage Vgryeso In=()10pA,Ic=0 ()5 Vv Turn-on Time ton See specified Test Circuit. (0,15)0.18 ps Storage Time tstg 4 (0.95)1.00 ps Fall Time te 4 (0.15)0.20 ys *% : The 2SA1257/2SC3143 are classified by 10mA hpp as follows : 60 G3 120 | 90 G4 180 [138 GS 270 | Marking 2SA1257:G hpp rank : 3, 4,5, Case Outline 2018A 28C3143 : K (unit: mm) Switching Time Test Circuit _ PW us 1B1 . | n%# 21% 7% / ne INPUT | BUH sg =a 4 1 Cc: Collector S B: Base -8v BY (] mf E: Emitter 101g 1 = 101ga=Ic=10mA th 0.4 SANYO: CP (For PNP, the polarity is reversed.) 7148M0/3187AT/D103KI,MT No.1057-1/3 295 MNSANYO SEMICONDUCTOR CORP 22 D mm 7997076 O007043 1 2$A1257/2$C3143. T-27-09 -% : 4 Yes 25A1287 eo Mes SC gh oan 2803143 Ss 4 40 7 93 - S E v7, = L 2 oh 3-H _0,2mA 0p i . geen 5 5 VA a ] 5 2 -2l HA 20 mA 3 0.1mA 3 _ 8 -10 3 10 Ip=0 Ip==0 % = = + = 0-2 8 ; + b-t Collector to Emitter Voltage, Vcog V Collector to Emitter Voltage,Vcp V ~50 Ic ~ Vee Ic - Vee 2SA1257 2803143 Voe=-5V Vog=6V gp is l i : ! 2 : 2 5 5 9 -20 2 2 g i | : 8 710 31 0 0 / OF =O. 60.8 0 2 D4 os e 0 Base to Emitter Voltage,Vpp V Base to Emitter Voltage, Vpp V 1000 hre_- 1000 hre_~ =-5V DC Current Gain,hpp a) ww 10 -04 1.0 -10 Collector Current,Ig mA -100 --lIe nn wD an ww aux 8 Gain-Bandwidth Product,fp MHz nN 15 7 oa -10 -100 Collector Current,lg mA st ce=5V DC Current Gain,hyg Wm me 8 Nn Ww wn 04 1.0 10 Collector Current,lc mA 8 Gain-Bandwidth Product,f; MHz we _ 7 Oo 10 100 Collector Current,I mA 296SANYO SEMICONDUCTOR CORP 28A1257/28C3143 o Output Capacitance,cy, pF NO ww = Oo -10 Collector to Base Voltage,Vcg ~ V Vv - Ic i = o Saturation Voltage, Vicreat) V ' Se Collector to Emitter -1.0 -10 Collector Current,Ig mA V - Ic Saturation Voltage,Vggreat) ~ V he 2 ee) ft 3 go 77% x a -1.0 -10 -100 Collector Current,lg mA Pc - Ta 300 & = 290 | 900 my 3 N ~ t 3,150 Pp 2 NN 2 100 b N i 8 0 0 $01 Ko Ambient Temperature,Ta C eee D Collector to Emitter Base to Emitter Output Capacitance,c,, pF _ = 1 8 04 Saturation Voltage, Vigrent) V Saturation Voltage, Vagiaay) V mm 7997076 Ooo7044 3 T=27-09 10 10 Collector to Base Voltage,Vcg V Vv - Ic 143 Io/lg=10 10 Collector Current,Ip ~ mA V = Ic 10 Collector Current,I mA 297SANYO SEMICONDUCTOR CORP 1 ecE D MM 7997076 OOOb784 5S me T-U-2O CASE OUTLINES OF SURFACE MOUNT TRANSISTORS @No marking is indicated. @All of Sanyo surface mount transistor case outlines are illustrated below. @All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by typical values. Case Outline[2018A] unit: mm in an a at koe) h- 2.9 __| f f.1->] C: Collector mon B: Base (] i E: Emitter 1! ee ee 2:4 SANYO: CP Case Outline(2038] unit: mm ree = 25 sh: 0.4 E; Emitter Cot B: Base SANYO: PCP Case Outline[2024A] unit: mm an 8] jo E " + 29 [hoe S: Source G: Gate ol tt Hi D: Drain 04 SANYO: CP Case Outline-[2044] unit: mm 6S phe a 1 2 cel ac E B: Base C: Collector =H E; Emitter 2afeobet-23 sanvo: TP-FA Case Outline[2028A] unit: mm iii. a e ql 035. | t 5 o D: Drain q J G: Gate S$: Source 1,7 1.27 SANYO: DP6B Case Outline[2046] unit: mm 0.6 3-04 0.16 rts ae s , T ) | 90.1 + Mw nw Gor | o2 | w 095 A958 |o 2.8 S : Source D: Drain $ O83 G2: Gate 2 i iS Gl: Gate 1 Case Outline[2030A] unit: mm K6.0- gc fl Ao | r -| 3 2 ; 8 y jl ai < QS. & 8 E: Emitter a g C: Collector = B: Base a? hat SANYO : DP6B Case Outline~[{2050] unit: mm 4 ote G T 5 I all.o-01 4 rN aol Sef 10.8 1 1.104 os . G: Gate (| | S: Source +t D: Drain ta a 06 SANYO: CP 37SANYO SEMICONDUCTOR CORP 22 D MM 7997076 OOOL74S 7 ml ted tain, Kat lila eC A ye Fae od Fann rus 2 ei dla a aiad aM AE te a Case Outline[2057] unit: mm rl a] Bie + -Eia -& ; Source pege fs | 1 H D: Drain wo} 0-3 SANYO: MCP Case Outline~ [2066] unit: mm 7- 9] 240 0-95, 0.55 3 vat 3 16 2-8 Of Gl: C2 + cs Collector 1 Collector 2 B2 : Base? EC +: EmitterCommon Bi ; Basel 2.9 raat SANYO + CPS Case Outline[2058] unit: mm 9.425, ag G: Gate S: Source r D: Drain Pee eee +03 a ayy Sey cn! 1 1 PA.-t ad a 1% aLlelleays PO 1 gr: Emittert ete | (OBL i Bint C2 =; Collector? 2.9 E2 ; Emitter2 Case Outline[2059] unit: mm 2.525 a ae bed B;: Base Cs: Collector d E: Emitter gig SANYO: MCP +423 Case Outline[2068] unit: mm og ae efflomled 26 El : Emitter] E2 : Emitter2 : Base2 C2 : Collector 2 s Basel Cl : Collector 1 {--}{=4 | SANYO : CPS Case Outline[2062] unit: mm goo S: Source Gi Gate SANYO: PCP Case Outline[2069] unit: mm R.2 45 eS Oo IIo | % 7 as SE B: Base C: Collector Pi & E: Enitter LJ) SANYO; SMP 2.55 2.55 Case Outline[2065] unit: mm 49 an 4 ot -as-+| be 0.8--4 2.9 - inal S: Source (| D: Drain Tad G: Gate t SANYO: CP t 3 =< i lL oso1 Case Outline-[2070) unit: mm o K O~0-1 ao a " Te 2G] a . oe : pees i ge Gea 29 D2: Drain? SC: Sourse Common D1: Draint [tert SANYO: CPs tr TTsi= tS 38SANYO SEMICONDUCTOR CORP mm 75997076 OOOb76b 7 Case Outline[2071] unit: mm OS Tr (is | Sel 4.0 Hf Tp 4.0 1.78 49 1. 4.0 G: Gate $ | S: Source i [2 D: Drain T-9) 220 Case Outline[2072] unit: mm 08 i (x i ___Te 4,0 1.78 4.0 } or +" 3| G: Gate ] 8S | S: Source Tot te] ot orain 40 1.78 4.0 Case Outline[(2073] unit: mm 0.5 > 3 r CEL Pte G: Gate 18 8: Source =! D: Drain 39