Power Transistors 2SA1500 Silicon PNP epitaxial planar type For power switching Unit: mm 10.50.5 Features Absolute Maximum Ratings (TC=25C) 2.80.2 1.40.1 8.00.2 6.70.3 2.80.2 1.50.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 15.40.3 4.20.3 4.50.2 9.50.2 3.70.2 Unit Collector to base voltage VCBO -400 V Collector to emitter voltage VCEO -400 V Emitter to base voltage VEBO -7 V Peak collector current ICP -8 A Collector current IC -5 A Collector power TC=25C Junction temperature Tj Storage temperature Tstg 40 1 150 C -55 to +150 C 0.6 -0.2 5.080.5 2 1:Base 2:Collector 3:Emitter JEDEC:TO-220(a) EIAJ:SC-46(a) 3 W 1.4 Electrical Characteristics +0.1 2.540.3 PC Ta=25C dissipation 0.80.1 2.50.2 9.3 Ratings 13.50.5 Symbol Solder Dip 1.40.1 Parameter (TC=25C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = -400V, IE = 0 -100 A Emitter cutoff current IEBO VEB = -7V, IC = 0 -100 A Collector to emitter voltage VCEO IC = -10mA, IB = 0 hFE1* VCE = -5V, IC = - 0.5A 20 8 Forward current transfer ratio -400 V 100 hFE2 VCE = -5V, IC = -2A Collector to emitter saturation voltage VCE(sat) IC = -2A, IB = - 0.4A Base to emitter saturation voltage VBE(sat) IC = -2A, IB = - 0.4A Transition frequency fT VCE = -10V, IC = - 0.5A, f = 1MHz Turn-on time ton IC = -2A, 1.0 s Storage time tstg IB1 = - 0.4A, IB2 = 0.4A, 2.5 s Fall time tf VCC = -100V 1.0 s *h FE1 -1.0 -1.5 15 V V MHz Rank classification Rank Q P hFE1 20 to 60 50 to 100 1 Power Transistors 2SA1500 PC -- Ta IC -- VCE 40 TC=25C - 0.8 IB=-10mA -9mA -8mA - 0.6 (1) 30 -7mA -6mA - 0.4 20 -5mA -1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (C) -2 -4 -10 -12 - 0.01 - 0.1 - 0.3 TC=-25C 100C 25C - 0.03 -30 -100 -300 25C TC=100C -30 -25C -10 -3 -1 - 0.1 - 0.01 - 0.03 - 0.1 - 0.3 Cob -- VCB -3 100 30 10 3 -30 Collector to base voltage VCB 3 1 10 1 tf 0.3 -100 (V) -10 -10 ICP -3 IC t=1ms DC -1 10ms - 0.3 ton 0.1 -3 Non repetitive pulse TC=25C -30 tstg 3 -1 Area of safe operation (ASO) - 0.1 - 0.03 0.01 -10 10 -100 0.03 -3 30 Collector current IC (A) Collector current IC (A) Switching time ton,tstg,tf (s) 300 -1 100 0.1 - 0.01 - 0.03 - 0.1 - 0.3 -10 Pulsed tw=1ms Duty cycle=1% IC/IB=5(-IB1=IB2) VCC=-100V TC=25C 30 1000 1 - 0.1 - 0.3 -1 ton, tstg, tf -- IC 100 3000 -100 VCE=-10V f=1MHz TC=25C 300 Collector current IC (A) 10000 -30 0.3 Collector current IC (A) IE=0 f=1MHz TC=25C -10 fT -- IC - 0.3 -10 -3 1000 -100 -3 -1 Collector current IC (A) Transition frequency fT (MHz) -10 -3 -25C VCE=5V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) -8 IC/IB=5 -30 -1 25C -1 hFE -- IC - 0.1 Collector output capacitance Cob (pF) -6 -1000 - 0.01 - 0.1 - 0.3 -3 Collector to emitter voltage VCE (V) VBE(sat) -- IC -100 -1 TC=100C - 0.03 (3) 0 -10 - 0.1 -2mA (2) IC/IB=5 -30 - 0.3 -4mA -3mA - 0.2 10 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=1.4W) 50 - 0.3 VCE(sat) -- IC -100 -1.0 Collector current IC (A) Collector power dissipation PC (W) 60 0 -1 -2 -3 Collector current IC -4 (A) -5 - 0.01 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) 2 Power Transistors 2SA1500 Rth(t) -- t Thermal resistance Rth(t) (C/W) 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink 1000 (1) 100 (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 Time t (s) 3 10 102 103 104