1
P ow er Transistors
2SA1500
Silicon PNP epitaxial planar type
For power switching
■Features
●High-speed switching
●High collector to base voltage VCBO
●Wide area of safe operation (ASO)
●Satisfactory linearity of foward current transfer ratio hFE
■Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–400
–400
–7
–8
–5
40
1.4
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
■Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –400V, IE = 0
VEB = –7V, IC = 0
IC = –10mA, IB = 0
VCE = –5V, IC = – 0.5A
VCE = –5V, IC = –2A
IC = –2A, IB = – 0.4A
IC = –2A, IB = – 0.4A
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –2A,
IB1 = – 0.4A, IB2 = 0.4A,
VCC = –100V
min
–400
20
8
typ
15
max
–100
–100
100
–1.0
–1.5
1.0
2.5
1.0
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
*hFE1 Rank classification
Rank Q P
hFE1 20 to 60 50 to 100
T
C
=25°C
Ta=25°C
Unit: mm
1:Base
2:Collector
3:Emitter
JEDEC:TO–220(a)
EIAJ:SC–46(a)
10.5±0.5 4.5±0.2
15.4±0.3
6.7±0.3
2.8±0.24.2±0.3
2.8±0.2
1.5±0.2
9.3
13.5±0.5
9.5±0.2
1.4±0.1 2.5±0.2
1.4±0.1
0.6
+0.1
–0.2
0.8±0.1
φ3.7±0.2
8.0±0.2
5.08±0.5
2.54±0.3
Solder Dip
132
P ow er Transistors 2SA1500
PC—Ta I
C—V
CE VCE(sat) —I
C
VBE(sat) —I
ChFE —I
CfT—I
C
Cob —V
CB ton, tstg, tf — ICArea of safe operation (ASO)
0 16040 12080 14020 10060
0
60
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C
=1.4W)
(1)
(2)
(3)
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
0 –12–10–8–2 –6–4
0
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
T
C
=25˚C
I
B
=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
– 0.1 –1 –10 –100– 0.3 –3 –30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 I
C
/I
B
=5
T
C
=100˚C
25˚C
–25˚C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
– 0.1 –1 –10 –100– 0.3 –3 –30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 I
C
/I
B
=5
T
C
=–25˚C
25˚C 100˚C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
– 0.1
– 0.3
–1
–3
–10
–30
–100
–300
–1000
V
CE
=5V
T
C
=100˚C 25˚C
–25˚C
Collector current I
C
(A)
Forward current transfer ratio h
FE
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
0.1
0.3
1
3
10
30
100
300
1000 V
CE
=–10V
f=1MHz
T
C
=25˚C
Collector current I
C
(A)
Transition frequency f
T
(MHz)
– 0.1 –1 –10 –100– 0.3 –3 –30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25˚C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF)
0–5–4–1 –3–2
0.01
0.03
0.1
0.3
1
3
10
30
100
t
f
t
on
t
stg
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5(–I
B1
=I
B2
)
V
CC
=–100V
T
C
=25˚C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(µs)
–1 –10 –100 –1000–3 –30 –300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 Non repetitive pulse
T
C
=25˚C
10ms
t=1ms
I
CP
I
C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
2
P ow er Transistors 2SA1500
Rth(t) —t
10
–4
1010
–3
10
–1
10
–2
110
3
10
2
10
4
0.1
1
10
100
10000
1000
(1)
(2)
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
Time t (s)
Thermal resistance R
th
(t) (˚C/W)
3
