45 A
60 A
NEW ADD-A-pakTM Power Modules
THYRISTOR/ THYRISTOR
IRKU/V41, 56 SERIES
Bulletin I27134 rev. B 09/97
1www.irf.com
Parameters IRKU/V41 IRKU/V56 Units
IT(AV) @ 85°C 45 60 A
IT(RMS) 70 95 A
ITSM @ 50Hz 850 1310 A
@ 60Hz 890 1370 A
I2t @ 50Hz 3.61 8.50 KA2s
@ 60Hz 3.30 7.82 KA2s
I2√t 36.1 85.0 KA2√s
VRRM
range 400 to 1600 V
TSTG - 40 to 125 oC
TJ- 40 to125 oC
These IRKU/V series of NEW ADD-A-paks use
power thyristors in two circuit configurations. The
semiconductor chips are electrically isolated from
the base plate, allowing common heatsinks and
compact assemblies to be built. They can be
interconnected to form single phase bridges
(IRKU+IRKV) or 6-pulse midpoint connection
bridge. These modules are intended for general
purpose high voltage applications such as high
voltage regulated power supplies, battery charge
and DC motor speed control circuits.
Major Ratings and Characteristics
Features
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
IRKU/V41, 56 Series
2
Bulletin I27134 rev. B 09/97
www.irf.com
IT(AV) Max. average on-state 45 60 180o conduction, half sine wave,
current TC = 85oC
IT(RMS)Max. RMS on-state 70 95 DC
current @ TC82 80 °C
ITSM Max. peak, one cycle 850 1310 t=10ms No voltage
non-repetitive on-state 890 1370 t=8.3ms reapplied
current 715 1100 t=10ms 100% VRRM
750 1150 t=8.3ms reapplied
940 1450 t=10ms TJ = 25 oC,
985 1520 t=8.3ms no voltage reapplied
I2t Max. I2t for fusing 3.61 8.56 t=10ms No voltage
3.30 7.82 t=8.3ms reapplied
2.56 6.05 t=10ms 100% V RRM
2.33 5.53 t=8.3ms reapplied
4.42 10.05 t=10ms TJ = 25 oC,
4.03 9.60 t=8.3ms no voltage reapplied
I2√t Max. I 2√t for fusing (1) 36.1 85.6 KA2√s t=0.1 to 10ms, no voltage reapplied
VT(TO) Max. value of threshold 0.88 0.85 Low level (3)
voltage (2) 0.91 0.88 High level (4)
rtMax. value of on-state 5.90 3.53 Low level (3)
slope resistance (2) 5.74 3.41 High level (4)
VTM Max. peak on-state ITM = π x IT(AV)
voltage IFM = π x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,
of rise of turned on 150 A/µs ITM =π x IT(AV), Ig
= 500mA,
current tr < 0.5 µs, tp > 6 µs
IHMax. holding current 200 TJ = 25 oC, anode supply = 6V,
resistive load, gate open circuit
ILMax. latching current 400 TJ = 25oC, anode supply = 6V,resistive load
VRRM , maximum VRSM , maximum VDRM , max. repetitive I RRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
08 800 900 800
12 1200 1300 1200
16 1600 1700 1600
(1) I2t for time tx = I2√t x √tx. (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x π x IAV < I < π x IAV (4) I > π x IAV
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Parameters IRKU/V41 IRKU/V56 Units Conditions
A
IRKU/V41, 56 15
On-state Conduction
KA2s
V
mΩ
1.81 1.54 V
mA
Sinusoidal
half wave,
Initial TJ = TJ max.
A
TJ = TJ max
TJ = TJ max
TJ = 25°C
Initial TJ = TJ max.
IRKU/V41, 56 Series
3
Bulletin I27134 rev. B 09/97
www.irf.com
TJJunction operating
temperature range
Tstg Storage temper. range - 40 to 125
RthJC Max. internal thermal
resistance, junction 0.23 0.20 Per module, DC operation
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 83 (3) g (oz)
Case style TO-240AA JEDEC
Thermal and Mechanical Specifications
Parameters IRKU/V41 IRKU/V56 Units Conditions
- 40 to 125
0.1
5
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU41/16S90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
°C
K/W
Nm
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm
IRRM Max. peak reverse and
IDRM off-state leakage current 15 mA TJ = 125 oC, gate open circuit
at VRRM, VDRM
VINS RMS isolation voltage 2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise T J = 125oC, linear to 0.67 VDRM,
of off-state voltage (5) gate open circuit
Triggering
PGM Max. peak gate power 10 10
PG(AV) Max. average gate power 2.5 2.5
IGM Max. peak gate current 2.5 2.5 A
-VGM Max. peak negative
gate voltage
VGT Max. gate voltage 4.0 TJ = - 40°C
required to trigger 2.5 TJ = 25°C
1.7 TJ = 125°C
IGT Max. gate current 270 TJ = - 40°C
required to trigger 150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
Parameters IRKU/V41 IRKU/V56 Units Conditions
0.25 V
6mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
W
V
10
TJ = 125oC,
rated V DRM applied
TJ = 125oC,
rated V DRM applied
Parameters IRKU/V41, 56 Units Conditions
Blocking
V
500 V/µs
IRKU/V41, 56 Series
4
Bulletin I27134 rev. B 09/97
www.irf.com
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction Rect. wave conduction
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRKU/V41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34
IRKU/V56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28 °C/W
All dimensions in millimeters (inches)
IRKU../.. (*)
IRKV../.. (*)
Outlines Table
(*) For terminals connections, see Circuit Configurations Table
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
6.1 ± 0.3
(0.24 ± 0.01) 24 ± 0.5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
(1.18 ± 0.04)
Faston tab. 2.8 x 0.8
20.5 ± 0.75
(0.81 ± 0.03)
15 ± 0.5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
5.8 ± 0.2 5
(0.16 ± 0.01)
4
Pitch 4.0 ± 0.2
(0.23 ± 0.01)
(0.25 ± 0.01)
6.3 ± 0.3
576
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0.02)
92 ± 0.5
20 ± 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0.94 ± 0.02)
(0.79 ± 0.02)
1
Circuit Configurations Table
IRKVIRKU
K1
G1
(4) (5)
+
K2
G2
-
-
(1)
(2)
(3)
(7) (6)
+
K2 G2
-
K1G1
+
(1)
(2)
(4) (5) (7) (6)
(3)
NOTE: To order the Optional Hardware see Bulletin I27900
IRKU/V41, 56 Series
5
Bulletin I27134 rev. B 09/97
www.irf.com
IRK U 56 / 16 S90
Device Code
1 2 345
1- Module type
2- Circuit configuration (See Circuit Configuration Table)
3- Current code
4- Voltage code (See Voltage Ratings Table)
5- dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Ordering Information Table
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
80
90
100
110
120
130
0 102030405
0
Maximum Allowable Cas e Tempera ture (°C
)
30°60° 90° 120° 180°
A vera ge On -state Current (A )
Con duc t ion An gle
IRK.41.. Seri e s
R (DC) = 0.46 K/W
thJC
80
90
100
110
120
130
0 2040608
0
DC
30°60° 90° 120° 180°
Average On-s ta te Cu rrent (A)
Maximum Allowable Case Tempera ture (°C
)
Cond uc t ion P eriod
IRK.4 1.. Series
R (DC) = 0.46 K/W
thJC
0
10
20
30
40
50
60
70
0 102030405
0
180°
120°
90°
60°
30° RMS Limi t
Cond uction Angle
Max im um Average O n-st ate Power Lo s s (W
)
Average On - sta te Cu rren t (A)
IR K.41.. Serie s
Per Junction
T = 125°C
J
0
20
40
60
80
100
0204060
80
DC
180°
120°
90°
60°
30° RMS Limit
Co nduction Pe riod
Maximum Avera g e O n -state P ower L oss ( W
)
Average On-s tate Current (A)
IRK.41 .. Seri es
Per Junction
T = 125°C
J
IRKU/V41, 56 Series
6
Bulletin I27134 rev. B 09/97
www.irf.com
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
Fig. 8 - On-state Power Loss Characteristics
300
400
500
600
700
800
110100
Number Of Equal Amplitu d e Half Cycl e Cu rrent Puls es (N
)
At Any R at ed L oad Co n dition An d With
Rat ed V A pp l ied Fol low ing S urge.
RRM
Pe ak Half Si n e Wave O n- s ta te Curren t (A )
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
IRK.41.. Series
Per J unction
300
400
500
600
700
800
900
0.01 0.1
1
Pul se Train Du ration (s)
Maxi mum Non Repetitive Surge Curren
t
Versus Pulse Trai n D uration. Cont ro
l
Initial T = 125°C
No Voltage Reap plied
Rate d V Reapplied
RRM
J
Of Co nduction May Not Be Maintaine d
.
Pe ak Half S ine Wave On-state Curr en t (A
)
IR K.41.. Ser ies
Per Junct ion
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C
)
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0
50
100
150
200
250
300
350
0 20406080100
Tota l Ou tp ut Cu rr ent (A)
Max im um Tot al Pow er Loss (W )
180°
(Sine)
180°
(Rect)
2 x IRK.41.. Series
Si n gle P ha se Bridg e
Connected
T = 125°C
J
0 20 40 60 80 100 120 140
Max imum Allowable Ambi e nt T e mpe r ature ( °C
)
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140 160 180
Total Output Current (A)
Maximum To tal P ower Los s (W)
60°
(Rect)
3 x IRK.41.. Series
6-Pulse Midpoint
Conn ection Bridge
T = 1 25°C
J
I
o
IRKU/V41, 56 Series
7
Bulletin I27134 rev. B 09/97
www.irf.com
Fig. 10 - Current Ratings CharacteristicsFig. 9 - Current Ratings Characteristics
Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 11 - On-state Power Loss Characteristics Fig. 12 - On-state Power Loss Characteristics
70
80
90
100
110
120
130
0 2040608010
0
DC
30°60°
90°
120° 180°
A ve rage On- state Current (A)
M axi mum A llowab le Case Temp era t u r e ( °C
)
Cond uction P eriod
IRK.56.. Serie s
R (DC) = 0.40 K/W
thJC
70
80
90
100
110
120
130
0 1020304050607
0
Maximum Al lowable Ca s e Temp eratu re (°C
)
30°60° 90° 120° 180°
Average On-state Current (A)
Conduction Angl e
IRK.56.. Series
R (DC) = 0.40 K/W
thJC
0
10
20
30
40
50
60
70
80
90
0 10203040506
0
180°
120°
90°
60°
30°
RMS Limit
Conduct ion Angle
Maximum Average On-state Power Loss (W
)
Average On-state Current (A)
IRK. 56.. Seri es
Pe r Jun cti on
T = 125°C
J
0
20
40
60
80
100
120
02040608010
0
DC
180°
120°
90°
60°
30°
RMS Li mit
Conduction Period
Maximu m Aver age On-s tat e Pow er Loss (W
)
Average On- state Curre nt (A)
IRK.5 6.. Seri es
Per Junct ion
T = 125°C
J
500
600
700
800
900
1000
1100
1200
110100
Numb er Of Eq ual Amplitud e Ha lf Cycle Cur rent Pu lses ( N
)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
A t Any Rat ed Lo a d Cond iti on And Wit h
Rated V Applied Following Surge.
RRM J
Peak Half Si ne W ave O n-state Current (A
)
IRK.56.. Series
Per Junction
400
600
800
1000
1200
1400
0.01 0.1
1
Pe ak Half Sine Wav e On- st ate Cur rent ( A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Curren
t
Versus Pulse Train Duration. Contro
l
I nit ia l T = 1 25°C
No Volt age R eappli ed
Rate d V Reapplied
Of Conduction May Not Be Maintaine d
.
J
RRM
IRK.56.. Se ries
Per Junction
IRKU/V41, 56 Series
8
Bulletin I27134 rev. B 09/97
www.irf.com
Fig. 15 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
Fig. 16 - On-state Power Loss Characteristics
Fig. 17 - On-state Voltage Drop Characteristics Fig. 18 - On-state Voltage Drop Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Tem perature (°C
)
2 K/W
1 K/W
R = 0.1 K/W - Delta R
thSA
0.7 K/W
0.5 K/W
0.3 K/W
0.2 K/W
0
50
100
150
200
250
300
350
400
450
0 20 40 60 80 100 120 140
Tota l O u tp u t Cu r r en t (A)
Max imum T o tal Powe r Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.56.. Series
Single P ha se Bridge
Connected
T = 125°C
J
0 20406080100120140
Maximum Allowable Ambient Temperature (°C
)
R = 0.1 K/W - Delta R
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
0.2 K/W
thSA
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250
T o ta l O u tp u t Cu r r en t ( A )
Maxim um Tot al Pow er Loss (W)
60°
(Rect)
3 x IR K. 56.. S erie s
6-Pulse Midpoint
Conn ection Bridge
T = 125°C
J
I
o
1
10
100
1000
0.511.522.533.544
.5
T = 25°C
J
Instantaneous On-state Current (A )
In s ta n ta ne ou s O n- s ta te Voltag e ( V)
T = 125°C
J
IR K.5 6 .. Series
Per Junc tion
1
10
100
1000
0123456
7
T = 2 5°C
J
Instantaneous On-state Curren t (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
IRK.41.. Series
Per Junction
IRKU/V41, 56 Series
9
Bulletin I27134 rev. B 09/97
www.irf.com
Fig. 20 - Recovery Current CharacteristicsFig. 19 - Recovery Charge Characteristics
Fig. 21 - Thermal Impedance ZthJC Characteristics
Fig. 22 - Gate Characteristics
30
40
50
60
70
80
90
100
110
10 20 30 40 50 60 70 80 90 10
0
Maximum Re verse Recovery Current - Irr (A
)
Ra te Of Fa ll Of Forw a rd Current - di/d t (A/ µ
s)
100 A
50 A
I = 200 A
TM
20 A
10 A
IRK.41.. Seri es
IRK.56.. Seri es
T = 125 °C
J
100
150
200
250
300
350
400
450
500
10 20 30 40 50 60 70 80 90 10
0
1 00 A
50 A
Rate Of Fall Of On-state Current - di/d t (A/µ
s)
M aximum Re verse Rec ove ry Charge - Qrr ( µC
)
I = 200 A
TM
20 A
10 A
IRK.4 1.. Series
IRK.5 6.. Series
T = 125 °C
J
0.01
0.1
1
0.001 0.01 0.1 1 1
0
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W
)
Per Junction
Steady State Value:
R = 0.46 K/W
R = 0.40 K/W
(DC Operation) IRK.41.. Series
IRK. 56.. Seri es
thJC
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100 100
0
(b) (a)
Recta n gular gate pulse
(4) (3) (2) (1)
(1 ) PGM = 100 W, tp = 500 µs
(2) PG M = 50 W , t p = 1 ms
(3) PG M = 20 W , t p = 25 ms
(4) PG M = 10 W , t p = 5 ms
I nstantaneous Gate Curre nt (A)
I nst anta ne o us Gat e Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Recommended load line for
VGD IGD Frequ en cy Limit ed b y P G(A V )
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
IRK.41 .. /. 56. . Se r ies
