ATP212
No. A1507-1/7
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPA
K
0.7
0.4
0.55
9.5
7.3 0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4 2.6
4.6
0.4
0.1
2.3 2.3
ATP212-TL-H
Features
• Low ON-resistance • Large current
•
4V drive • Slim package
•
Halogen free compliance • Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID35 A
Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% 105 A
Allowable Power Dissipation PDTc=25°C40W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 19 mJ
Avalanche Current *2 IAV 18 A
Note :
*1 VDD=10V, L=100μH, IAV=18A
*2 L≤100μH, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : ENA1507A
61312 TKIM/62409PA TKIM TC-00001998
ATP212
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : ATPAK
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
TL
ATP212
LOT No.
1
3
2,4
SANYO Semiconductors
DATA SHEET
ATP212
No. A1507-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V
Zero-Gate Voltage Drain Current IDSS V
DS=60V, VGS=0V 1μA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance | yfs |VDS=10V, ID=18A35 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=18A, VGS=10V 17 23 mΩ
RDS(on)2 ID=9A, VGS=4.5V 23 33 mΩ
RDS(on)3 ID=5A, VGS=4V 25 37 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 1820 pF
Output Capacitance Coss 150 pF
Reverse Transfer Capacitance Crss 100 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
16 ns
Rise Time tr 110 ns
Turn-OFF Delay Time td(off) 125 ns
Fall Time tf87 ns
Total Gate Charge Qg VDS=30V, VGS=10V, ID=35A 34.5 nC
Gate-to-Source Charge Qgs 6.5 nC
Gate-to-Drain “Miller” Charge Qgd 6.8 nC
Diode Forward Voltage VSD IS=35A, VGS=0V 0.96 1.2 V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
ATP212-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=18A
RL=1.67Ω
VDD=30V
VOUT
ATP212
VIN
10V
0V
VIN
ATP212
No. A1507-3/7
RDS(on) -- VGS RDS(on) -- Tc
ID -- VDS ID -- VGS
IS -- VSD
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
Ciss, Coss, Crss -- VDS
06020 30 40 5010
IT14748
IT14747
IT14746
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.001
0.01
7
5
3
2
IT14745
25
°
C
--25
°
C
f=1MHz
Coss
Crss
Tc=75°C
0.1 1.0 223 52357 10
357
5
100
10
3
2
5
7
3
2
5
7
7
0.1 1.0 23 57723 5 100
VDD=30V
VGS=10V
td(off)
tf
td(on)
tr
IT14743 IT14744
0
0
55
16214365897101211 --50 --25 0 25 50 75 100 125 150
14 1513
45
50
35
25
40
30
5
10
20
15
0
55
50
45
40
35
30
25
20
15
10
5
VDS=10V
Single pulse
ID=5A
18A
IT14741 IT14742
0 5.51.5
0
0
35
25
5
15
20
30
10
2.00.2 0.6 1.20.4 0.8 1.61.41.0 1.8 0
60
50
40
3.0 4.51.0 2.5 4.00.5 2.0 3.5 5.0
30
20
10
3.5V
4.5V
VGS=2.5V
--25°C
25
°
C
Tc=75°C
2
0.1
7
5
3
2
10 23 57
16.0V
Ciss
8.0V
10.0V
VGS=4.0V, ID=5A
VGS=10.0V, ID=18A
Tc= --25°C
75
°
C
25
°
C
1.0
7
5
7
3
2
10
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
100
7
5
3
75
°
C
25°C
Tc= --25°C
100
1000
7
5
7
5
5
3
2
3
2
3.0V
4.0V
6.0V
9A
VGS=4.5V, ID=9A
Tc=25°C
Single pulse Single pulse
VGS=0V
Single pulse
VDS=10V
Single pulse
Tc=25°C
Single pulse
ATP212
No. A1507-4/7
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
EAS -- Ta
Avalanche Energy derating factor -- %
Ambient Temperature, Ta -- °C
IT14750
0
025 50 75 100 125 150
100
80
60
20
40
120
175
IT10478
IT14751
IT14749
0
0
1
2
3
4
5
6
7
8
4010 15 20 25 30 35
10
9
5
VDS=30V
ID=35A
A S O
PD -- Tc Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
2
3
2
5
3
7
2
0.1
1.0
3
5
7
2
10
223 57 23 57
0.1 1.0 357
10 100
Operation in this area
is limited by RDS(on).
10
μ
s
100μs
ID=35A
IDP=105A
DC operation
1ms
10ms
100ms
3
5
7
100
0
0
020 40 60
10
5
15
30
35
40
20
25
80 100 120
45
140 160
PW≤10μs
Tc=25°C
Single pulse
ATP212
No. A1507-5/7
Taping Specifi cation
ATP212-TL-H
ATP212
No. A1507-6/7
Outline Drawing Land Pattern Example
ATP212-TL-H
Mass (g) Unit
0.266
* For reference
mm Unit: mm
6.5
6.71.6 2
2.3 2.3
1.5
ATP212
No. A1507-7/7 PS
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the ATP212 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
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different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
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independent device, the customer should always evaluate and test devices mounted in the customer's
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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