SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103DEVICE NPN PNP 2N3903 2N4402 2N4403 1 2N4126 GES5371 GES5373 ES5374 7 G 10 GES5812 GES5817 GES5823 1 SILICON SIGNAL TRANSISTORS BVceo (Vv) TO-92 PACKAGE hee COMPLEMENTARY PAIRS VcE(SAT) MIN.-MAX. @ Ic, Vee (V) 50-150 10mA 50-150 50-1 100-300 50-150 100- 50-150 120-360 50-150 120-360 200 100-300 60-600 100-300 200-400 60-300 30-150 1 50-150 150-500 150-500 60-160 60-160 1 100-200 NIN INI N EDN 150-300 160 i 100-200 100-200 NIN 100-300 1 wafer f a} li] / fo} f if] af af fe] lpn 200-500 1 1 1 107 (V) MAX. @ COMPLEMENT 2N3905 2N3904 2N4125 DQ OOO) Oj;O1a) GES6013 12 GES6015 17 $601 GES2906 (Continued)Silicon Transistors i Ga GI 2N4123 2N4124 The General Electric 2N4123 and 2N4124 are NPN Silicon Planar Epitaxial passivated transistors designed for general pur- pose amplifier applications. absolute maximum ratings: (Ta = 25C unless otherwise specified) Voltages Collector to Emitter Collector to Base Emitter to Base Current Collector Dissipation Total Power Ta < 25C Derate Factor Ta > 25C Total Power Ty < 25C Derate Factor Te >25C Temperature Operating Storage Lead (1/16" + 1/32 from case for 10 sec.) VcEO VcBo VEBO 2N4123 30 40 5 200 350 2.8 1 8 2N4124 25 30 5 200 350 2.8 1 8 -55C to 150C -55C to +150C +260C Volts Volts Volts mA mW mW/C Watt mWw/C | NOTE A--* a s: 1, THREE LEADS 2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE THIS SIDE. 3. (THREE LEADS) b2 APPLIES BETWEEN Ly AND Lo. | gb APPLIES BETWEEN Lo AND 12.70 MM (.500") SEATING PLANE TO-92 EMITTER 2.BASE 3. COLLECTOR INCH 407 482:016 0!9' 3 FROM THE SEATING PLANE. DIAMETER IS UN- CONTROLLED IN L,; AND BEYOND 12.70 MM (.500") FROM SEATING PLANE. electrical characteristics: Static Characteristics Collector-Emitter Breakdown Voltage (Ic = 1mA, Ip = 0) Collector-Emitter Breakdown Voltage (Ic = 1 mA, Vpg = 0) Collector-Base Breakdown Voltage (Ic = 10uA, Ip = 0) Collector-Base Breakdown Voltage (Ic = 10 yA, Ig = 0) Emitter-Base Breakdown Voltage (ig = 10 yA, Ic = 0) Collector Cutoff Current (Vcp = 20V, Ig = 0) Emitter-Base Reverse Current (Ves = 3V, Ic = 0) Forward Current Transfer Ratio (Vcr = 1V, Io = 2mA) (VcE = 1V, Ic = 2 mA) (Vcr = 1V, Ic = 50 mA) (Vcr = 1V, Ic = 50 mA) 2N4123 2N4124 2N4123 2N4124 2N4123 2N4124 2N4123 2N4124 (Ta = 25C unless otherwise specified) SYMBOL V(BR)CEO V(BR)CEO Vier)cBo Vipr)cBo V(BR)EBO Icpo leBo hrg hre thre 405 thre MIN. MAX. UNITS 30 Volts 25 Volts 40 Volts 30 _ Volts 5 _ Volts 50 nA _ 50 nA 50 150 120 360 25 ~ 60 _2N4123 2N4124 Static Characteristics (continued) SYMBOL Collector-Emitter Saturation Voltage (Ic = 50 mA, Ip = 5mA) T VoK(sat) Base-Emitter Saturation Voltage (Ic = 50mA, Ip = 5mA) TV BE(sat) Dynamic Characteristics Collector-Base Capacitance (Vcp = SV, Ip = 0, f = 100 KHz) Cob Emitter-Base Capacitance (Veg =.5V, Ig = 0, f = 100 KHz) Cib Gain Bandwidth Product (Veg = 20V, Ic = 10mA, f = 100 MHz) 2N4123 fry (Veg = 20V, Ic = 10mA, f = 100 MHz) - 2N4124 fy Forward Current Transfer Ratio (Veg = 20V, Ic = 10mA, f = 100 MHz) ~ 2N4123 hfe (Vox = 20V, Ic = 10mA, f = 100 MHz) 2N4124 hfe Forward Current Transfer Ratio (Vcr = 1V, Ic = 2mA, f = 1 KHz) 2N4123 hfe (Veg = 1V, Ic = 2mA, f = 1 KHz) 2N4124 hfe Noise Figure (Broad Band) (Ic = 100uA, Vex = SV, Rs = 1K 2N4123 NF Bandwidth = 10 Hz to 15.7 KHz) 2N4124 NF {Pulse Conditions: Pulse Width < 300us, Duty Cycle < 2%. *Indicates JEDEC Registered Data. 406 MIN. 250 300 2.5 50 120 MAX, 95 200 480 UNITS Volts Volts pF pF MHz MHz dB dBhee - FORWARD CURRENT TRANSFER RATIO hee - FORWARD CURRENT TRANSFER RATIO Vee( set BASE EMITTER SATURATION VOLTAGE - VOLTS 2N4123 Ty # 125C, Vee = IV Ty * 25C, Ve slV Ta 25C, Vee Vee 2 Iv Ta" 55C, J t 10 100 Tc - COLLECTOR CURRENT - mA 1. FORWARD CURRENT TRANSFER RATIO VS. COLLECTOR CURRENT 2N4124 Ta = 125C, Veg = 1V Ta* 25C, Vee = SV Ta 2 20C. Vee * IV Ta = 35C, Vee * IV " i 0 106 Ig ~ COLLECTOR CURRENT - mA 2. FORWARD CURRENT TRANSFER RATIO VS. ~~ & wen 5 COLLECTOR CURRENT .2 2N4123 Ie 2 Ig x 10 2N4124 Vee (sat) 7596 (sat) + * Vee Vee dl I to 100 Ig - COLLECTOR CURRENT - mA 3. BASE EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 407 2N4123 2N41242N4123 2N4124 4 2 #3 2 12 2N4123 < 2N4124 2 ht 3 10 ie 9 5 3 8 wi ? Ig etma 1OmA] [50mA 100mA so Ea 6 13 3 4 = 3 i; BO, doi 01 J 1 10 20 Ip - BASE CURRENT - mA 4. COLLECTOR EMITTER SATURATION VOLTAGE VS. BASE CURRENT 1.0 2N4123 Te Ig X10 Vee (pet) ~ COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS ol i to 100 Ig - COLLECTOR CURRENT - mA 5. COLLECTOR EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 2N4124 Ig tIg x10 Voce get} - COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS - t 10 100 Tc - COLLECTOR CURRENT - mA 6. COLLECTOR EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 408