2/28/00
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
Dimensions in inches
and (millimeters)
TO-226AA (TO-92)
BC327 thru BC328
Small Signal Transistors (PNP)
Features
PNP Silicon Epitaxial Planar T ransistors for switching
and amplifier applications. Especially suitable for
AF-driver stages and low-power output stages.
• These types are also available subd ivided into
three groups, -16, -25, and -40, according to their
DC current gain. As complementary types, the NPN
transistors BC327 and BC338 are recommend ed.
• On special request, these transistors are also
manufactured in the pin configurat ion TO-18.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameters Symbols Value Units
Collector-Emitter Voltage BC327 -VCES 50 V
BC328 30
Collector-Emitter Voltage BC327 -VCEO 45 V
BC328 25
Emitter-Base Voltage -VEBO 5V
Collector Current -IC800 mA
Peak Collector Current -ICM 1A
Base Current -IB100 mA
Power Dissipation at Tamb = 25°C Ptot 625(1) mW
Thermal Resistance Junct ion to Ambient Air RΘJA 200(1) °C/W
Junction Temper ature Tj150 °C
Storage Temperature Range TS– 65 to +150 °C
Notes: (1) Valid provid ed that leads are kept at ambient temperature at a d istance of 2 mm from case.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk - 5K per container
E7/4K per Ammo tape
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Current Gain Group -16 100 160 250
-25 -VCE = 1 V, -IC= 100 mA 160 250 400
DC Current Gain -40 hFE 250 400 630
Current Gain Group -16 60 130
-25 -VCE = 1 V, -IC= 300 mA 100 200
-40 170 320
BC327 -VCE = 45 V 2 100 nA
Collector-Emitter Cutoff Current BC328 -ICES -VCE = 25 V 2 100 nA
BC327 -VCE = 45 V, Tamb = 125°C 10 µA
BC328 -VCE = 25 V, Tamb = 125°C 10 µA
Collector Saturat ion Voltage -VCEsat -IC= 500 mA, -IB= 50 mA 0.7 V
Base-Emitter Voltage -VBE -VCE = 1 V, -IC= 300 mA 1.2 V
Collector-Emitter Breakdown Voltage BC327 -V(BR)CEO -IC= 10 mA 45 V
BC328 25
Collector-Emitter Breakdown Voltage BC327 -V(BR)CES -IC= 0.1 mA 50 V
BC328 30
Emitter-Base Breakdown Voltage -V(BR)EBO -IE= 0.1 mA 5 V
Gain-Bandwidth Product fT-VCE = 5 V, -IC= 10 mA 100 MHz
f = 50 MHz
Collector-Base Capacitance CCBO -VCB = 10 V, f = 1 MHz 12 pF
BC327 thru BC328
Small Signal Transistors (PNP)
BC327 thru BC328
Small Signal Transistors (PNP)
Ratings and Characteristic Curves
BC327 thru BC328
Small Signal Transistors (PNP)
Ratings and Characteristic Curves
BC327 thru BC328
Small Signal Transistors (PNP)
Ratings and Characteristic Curves