© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1Publication Order Number:
NTJS3157N/D
NTJS3157N
Trench Power MOSFET
20 V, 4.0 A, Single N−Channel, SC−88
Features
•Leading Trench Technology for Low RDS(ON) Extending Battery Life
•Fast Switching for Increased Circuit Efficiency
•SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board
Utilization, Same as SC−70−6
•Pb−Free Packages are Available
Applications
•DC−DC Conversion
•Low Side Load Switch
•Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 20 V
Gate−to−Source Voltage VGS ±8.0 V
Continuous Drain
Current (Note 1) Steady
State
TA = 25 °CID3.2 A
TA = 85 °C 2.3
t ≤ 5 s TA = 25 °C 4.0
Power Dissipation
(Note 1)
Steady
State TA = 25 °CPD1.0 W
Pulsed Drain Current tp = 10 msIDM 10 A
Operating Junction and Storage Temperature TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode) IS1.6 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s) TL260 °C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State RqJA 125 °C/W
Junction−to−Ambient − t ≤5 s RqJA 80
Junction−to−Lead – Steady State RqJL 45
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
SOT−363
CASE 419B
STYLE 28
MARKING DIAGRAM &
PIN ASSIGNMENT
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
T92 MG
G
1
6
1
T92 = Device Code
M = Date Code
G= Pb−Free Package
DDS
DDG
(Note: Microdot may be in either location)
V(BR)DSS RDS(on) Typ ID Max
45 mW @ 4.5 V
55 mW @ 2.5 V
70 mW @ 1.8 V
4.0 A
20 V
Top View
SC−88 (SOT−363)
D
D
S
D
D
6
5
4
1
2
3
G
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA20 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJVGS = 0 V, ID = 250 mA12 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 16 V
TJ = 25°C 1.0 mA
TJ = 85°C 5.0
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH)
VGS = VDS, ID = 250 mA
0.40 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ−4.0 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 4.0 A 45 60 mW
VGS = 2.5 V, ID = 3.6 A 55 70
VGS = 1.8 V, ID = 2.0 A 70 85
Forward Transconductance gFS VGS = 10 V, ID = 3.2 A 9.0 S
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
500 pF
Output Capacitance COSS 75
Reverse Transfer Capacitance CRSS 60
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 10 V,
ID = 3.2 A
6.9 15 nC
Gate−to−Source Charge QGS 1.0
Gate−to−Drain Charge QGD 1.8
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time td(on)
VGS = 4.5 V, VDD = 10 V,
ID = 0.5 A, RG = 6.0 W
6.0 15 ns
Rise Time tr12 25
Turn−Off Delay Time td(off) 21 45
Fall Time tf11 25
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS =0 V,
IS = 1.6 A
TJ = 25°C 0.7 1.0 V
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 1.6 A
15 ns
Charge Time Ta12
Discharge Time Tb3.0
Reverse Recovery Charge QRR 5.0 nC
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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3
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0
10
2
62
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
0
Figure 1. On−Region Characteristics
0.5
12
213
10
6
0
0
Figure 2. Transfer Characteristics
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.1
0.05
0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
0.25
3
75 150
ID = 4.0 A
VGS = 4.5 V
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
1
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
8 V
108
VDS ≥ 10 V
0.15
2
1.5
75
ID = 4 A
TJ = 25°C
0.03
25
0.05
0.04
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
13 97
0.06
64
VGS = 2.5 V
TJ = 25°C
0.2
1.8
1.6
8
VGS = 4.5 V
4
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
IDSS, LEAKAGE (nA)
22012
10000
10
VGS = 0 V
TJ = 100°C
18
100
TJ = 150°C
4
6
8
1735 9
VGS = 1.8 V
4 V
1.6 V
1.2 V
1.4 V
TJ = −55°C
TJ = 125°C
0.07
0.09
0.08
0.1
VGS = 1.8 V
68 1614
2 V
1 V
0.8 V
4
8
2.5
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4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS
Figure 7. Capacitance Variation
06
4
1
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID = 3.2 A
TJ = 25°C
8
2
3
5
42
QG(TOT)
QGS QGD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
1
RG, GATE RESISTANCE (OHMS)
t, TIME (ns)
101
100
10
td(off)
Figure 10. Diode Forward Voltage vs. Current
0.8
0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
VGS = 0 V
6
0.60.4
2
3
1
10.2
TJ = 25°C
VGS = 0 V
80
1400
1200
600
200
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
TJ = 25°C
Coss
Ciss
Crss
42012
400
800
1648
VDS = 0 V
Ciss
Crss
VGS VDS
VDS
VDS = 10 V
ID = 0.5 A
VGS = 4.5 V
td(on)
tf
tr
4
5
0.90.70.50.3
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
8
2
0
4
6
10
5731
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5
ORDERING INFORMATION
Device Package Shipping†
NTJS3157NT1 SC−88 3000 Tape & Reel
NTJS3157NT1G SC−88
(Pb−Free)
3000 Tape & Reel
NTJS3157NT2 SC−88 3000 Tape & Reel
NTJS3157NT2G SC−88
(Pb−Free)
3000 Tape & Reel
NTJS3157NT4 SC−88 10,000 Tape & Reel
NTJS3157NT4G SC−88
(Pb−Free)
10,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTJS3157N
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
E0.2 (0.008) MM
123
D
e
A1
A
A3
C
L
654
−E−
b6 PL
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b0.10 0.21 0.30
C0.10 0.14 0.25
D1.80 2.00 2.20
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.20 REF 0.008 REF
HE
HE
E1.15 1.25 1.35
e0.65 BSC
L0.10 0.20 0.30
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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Phone: 81−3−5773−3850
NTJS3157N/D
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