PSMN3R7-100BSE N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK 3 September 2018 Product data sheet 1. General description Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low RDSon and a very strong linear-mode (SOA) performance. PSMN3R7-100BSE complements the latest "hot-swap" controllers - robust enough to withstand 2 substantial inrush currents during turn on, low RDSon to minimize I R losses and deliver optimum efficiency when turned fully ON. 2. Features and benefits * * Fully optimized Safe Operating Area (SOA) for superior linear mode operation 2 Low RDSon for low I R conduction losses 3. Applications * * * * * Hot swap Load switch Soft start E-fuse Telecommunication systems based on a 48 V backplane/supply rail 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 C Tj 175 C - - 100 V ID drain current VGS = 10 V; Tmb = 25 C; Fig. 2 - - 120 A IDM peak drain current pulsed; tp 10 s; Tmb = 25 C; Fig. 3 - - 780 A Ptot total power dissipation Tmb = 25 C; Fig. 1 - - 405 W VGS = 10 V; ID = 25 A; Tj = 25 C; Fig. 12 - 3.36 3.95 m ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 14; Fig. 15 - 45.2 77 nC - 176 246 nC ID = 120 A; Vsup 100 V; RGS = 50 ; VGS = 10 V; Tj(init) = 25 C; unclamped; Fig. 4 - - 542 mJ [1] Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S [1] non-repetitive drainsource avalanche energy Continuous current is limited by package PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain[1] 3 S source mb D mounting base; connected to drain Graphic symbol mb D G mbb076 2 1 S 3 D2PAK (SOT404) [1] It is not possible to make connection to pin 2. 6. Ordering information Table 3. Ordering information Type number Package PSMN3R7-100BSE Name Description Version D2PAK plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body SOT404 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 C Tj 175 C - 100 V VDGR drain-gate voltage 25 C Tj 175 C; RGS = 20 k - 100 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 C; Fig. 1 - 405 W ID drain current VGS = 10 V; Tmb = 25 C; Fig. 2 [1] - 120 A VGS = 10 V; Tmb = 100 C; Fig. 2 [1] - 120 A - 780 A IDM peak drain current pulsed; tp 10 s; Tmb = 25 C; Fig. 3 Tstg storage temperature -55 175 C Tj junction temperature -55 175 C Tsld(M) peak soldering temperature - 260 C Source-drain diode IS source current Tmb = 25 C - 120 A ISM peak source current pulsed; tp 10 s; Tmb = 25 C - 780 A - 542 mJ Avalanche ruggedness EDS(AL)S [1] non-repetitive drainID = 120 A; Vsup 100 V; RGS = 50 ; source avalanche energy VGS = 10 V; Tj(init) = 25 C; unclamped; Fig. 4 Continuous current is limited by package PSMN3R7-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 2 / 12 PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK 03aa16 120 aaa-028866 200 ID (A) Pder (%) 150 80 (1) 100 40 50 0 0 50 100 150 Tmb (C) 0 200 0 25 50 75 100 125 150 175 Tmb (C) 200 VGS 10 V (1) Capped at 120A due to package Fig. 1. ID (A) Normalized total power dissipation as a function of mounting base temperature Fig. 2. Continuous drain current as a function of mounting base temperature aaa-028222 103 Limit RDSon = VDS / ID tp = 10 s 102 100 s DC 1 ms 10 10 ms 100 ms 1 10-1 10-1 1 10 102 VDS (V) 103 Tmb = 25 C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN3R7-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 3 / 12 PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK IAL (A) aaa-028867 103 102 (1) (2) 10 1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 C; (2) Tj (init) = 100 C Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Min Typ Max Unit Rth(j-mb) thermal resistance from Fig. 5 junction to mounting base Conditions - 0.3 0.37 K/W Rth(j-a) thermal resistance from junction to ambient - 50 - K/W aaa-028868 1 Zth(j-mb) (K/W) = 0.5 10-1 0.2 0.1 0.05 P 10-2 0.02 = tp T single shot t tp 10-3 10-6 Fig. 5. 10-5 10-4 10-3 10-2 T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics PSMN3R7-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 4 / 12 PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V; Tj = 25 C 100 - - V ID = 250 A; VGS = 0 V; Tj = -55 C 90 - - V gate-source threshold voltage ID = 1 mA; VDS=VGS; Tj = 25 C; Fig. 10; Fig. 11 2 2.66 4 V ID = 1 mA; VDS=VGS; Tj = 175 C; Fig. 11 1 - - V ID = 1 mA; VDS=VGS; Tj = -55 C; Fig. 11 - - 4.6 V VDS = 100 V; VGS = 0 V; Tj = 25 C - 0.026 2 A VDS = 100 V; VGS = 0 V; Tj = 175 C - - 500 A VGS = 20 V; VDS = 0 V; Tj = 25 C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 25 C; Fig. 12 - 3.36 3.95 m VGS = 10 V; ID = 25 A; Tj = 100 C; Fig. 13 - - 7.3 m VGS = 10 V; ID = 25 A; Tj = 175 C; Fig. 13 - - 10.7 m f = 1 MHz 0.49 0.98 1.96 ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 14; Fig. 15 - 176 246 nC ID = 0 A; VDS = 0 V; VGS = 10 V - 71 99 nC ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 14; Fig. 15 - 49.5 74 nC - 30 - nC VGS(th) IDSS IGSS RDSon RG drain leakage current gate leakage current drain-source on-state resistance gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS(th) pre-threshold gatesource charge QGS(th-pl) post-threshold gatesource charge - 19.7 - nC QGD gate-drain charge - 45.2 77 nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 - 4.9 - V Ciss input capacitance - 11692 16370 pF Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; Fig. 16 - 657 887 pF Crss reverse transfer capacitance - 353 494 pF td(on) turn-on delay time - 40 60 ns tr rise time - 64 97 ns td(off) turn-off delay time - 98 147 ns tf fall time - 69 104 ns VDS = 50 V; RL = 2 ; VGS = 10 V; RG(ext) = 5 Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 C; Fig. 17 - 0.79 1.2 V trr reverse recovery time - 70 91 ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 50 V; Fig. 18 - 195 254 nC PSMN3R7-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 5 / 12 PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK aaa-028869 160 ID (A) 10 V 7V aaa-028870 30 RDSon (m) 25 6.5 V 120 20 6V 80 15 VGS = 5.5 V 10 40 5V 5 4.5 V 0 Fig. 6. 3.5 V 0 1 2 3 VDS (V) 0 4 0 4 8 12 16 VGS (V) 20 Tj = 25 C Tj = 25 C; ID = 25 A Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-028871 100 gfs (S) aaa-028872 160 ID (A) 80 120 60 80 40 40 20 0 175C 0 20 40 60 80 ID (A) 0 100 Tj = 25 C; VDS = 8 V Fig. 8. Product data sheet 1 2 3 4 5 6 7 VGS (V) 8 VDS = 8 V Forward transconductance as a function of drain current; typical values PSMN3R7-100BSE 0 Tj = 25C Fig. 9. Transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 6 / 12 PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK aaa-028873 10-1 ID (A) VGS(th) (V) 10-2 aaa-028874 5 4 10-3 Min Typ Max 3 Max Typ 10-4 2 Min 10-5 10-6 1 0 1 2 3 4 0 -60 5 VGS (V) Tj = 25 C; VDS = 5 V 5.5 V 30 60 90 120 150 Tj (C) 180 Fig. 11. Gate-source threshold voltage as a function of junction temperature aaa-028875 5V 0 ID = 1 mA ; VDS = VGS Fig. 10. Sub-threshold drain current as a function of gate-source voltage 30 RDSon (m) 25 -30 a 6V 003aak756 3 2.4 6.5 V 20 1.8 15 10 7V 5 8V 0 1.2 0.6 VGS = 10 V 0 20 40 60 80 100 120 140 ID (A) 0 -60 160 -30 0 30 60 90 120 150 Tj (C) 180 Tj = 25 C Fig. 12. Drain-source on-state resistance as a function of drain current; typical values PSMN3R7-100BSE Product data sheet Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 7 / 12 PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK VGS (V) aaa-028877 10 VDS ID 8 VGS(pl) 80 V 6 50 V VGS(th) VDS = 20 V 4 VGS QGS1 2 0 QGS2 0 40 80 120 160 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. Gate charge waveform definitions 200 Tj = 25 C; ID = 25 A Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-028878 105 C (pF) aaa-028879 160 IS (A) 120 Ciss 104 80 103 Coss 40 175C Crss 102 10-1 1 10 VDS (V) 0 102 VGS = 0 V; f = 1 MHz 0 0.2 0.4 Tj = 25C 0.6 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source-drain (diode forward) current as a as a function of drain-source voltage; typical function of source-drain (diode forward) values voltage; typical values 003aal160 ID (A) trr ta tb 0 0.25 IRM IRM t (s) Fig. 18. Reverse recovery timing definition PSMN3R7-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 8 / 12 PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK 10. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 b2 c b e e Q 0 5 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 b b2 c 4.5 1.40 0.85 1.45 0.64 4.1 1.27 0.60 1.05 0.46 D D1 E e 11 1.6 10.3 1.2 9.7 2.54 HD Lp Q 15.8 2.9 2.6 14.8 2.1 2.2 sot404_po Outline version References IEC JEDEC JEITA European projection Issue date 06-03-16 13-02-25 SOT404 Fig. 19. Package outline D2PAK (SOT404) PSMN3R7-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 9 / 12 PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK 11. Soldering Footprint information for reflow soldering of D2PAK package SOT404 10.85 10.60 10.50 1.50 0.30 2.25 2.15 8.15 8.35 8.275 1.50 4.60 16.35 0.30 0.20 1.70 7.40 4.85 5.40 7.50 7.95 8.075 3.10 3.00 0.20 2.54 1.55 1.30 1.20 occupied area solder resist solder lands solder paste Dimensions in mm Issue date 17-05-24 17-05-26 sot404_fr Fig. 20. Reflow soldering footprint for D2PAK (SOT404) PSMN3R7-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 10 / 12 PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK 12. Legal information injury, death or severe property or environmental damage. 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Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 11 / 12 PSMN3R7-100BSE Nexperia N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 2 8. Thermal characteristics............................................... 4 9. Characteristics.............................................................. 4 10. Package outline.......................................................... 9 11. Soldering................................................................... 10 12. Legal information......................................................11 (c) Nexperia B.V. 2018. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 3 September 2018 PSMN3R7-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 3 September 2018 (c) Nexperia B.V. 2018. All rights reserved 12 / 12