PSMN3R7-100BSEJ - NEXPERIA - Datasheet.Directory

PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

3 September 2018 Product data sheet

1. General description

Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified

to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low

RDSon and a very strong linear-mode (SOA) performance.

PSMN3R7-100BSE complements the latest "hot-swap" controllers - robust enough to withstand

substantial inrush currents during turn on, low RDSon to minimize I2R losses and deliver optimum

efficiency when turned fully ON.

2. Features and benefits

•Fully optimized Safe Operating Area (SOA) for superior linear mode operation

•Low RDSon for low I2R conduction losses

3. Applications

•Hot swap

•Load switch

•Soft start

•E-fuse

•Telecommunication systems based on a 48 V backplane/supply rail

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 100 V

IDdrain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - - 120 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - - 780 A

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 405 W

Static characteristics

RDSon drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 12

- 3.36 3.95 mΩ

Dynamic characteristics

QGD gate-drain charge - 45.2 77 nC

QG(tot) total gate charge

ID = 25 A; VDS = 50 V; VGS = 10 V;

Fig. 14; Fig. 15 - 176 246 nC

Avalanche ruggedness

EDS(AL)S non-repetitive drain-

source avalanche

energy

ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

Fig. 4

- - 542 mJ

[1] Continuous current is limited by package

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain[1]

3 S source

mb D mounting base; connected to

drain

1 3

D2PAK (SOT404)

mbb076

[1] It is not possible to make connection to pin 2.

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PSMN3R7-100BSE D2PAK plastic, single-ended surface-mounted package (D2PAK); 3

terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x

4.3 mm body

SOT404

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 100 V

VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 100 V

VGS gate-source voltage -20 20 V

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 405 W

VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 120 AIDdrain current

VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 120 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 780 A

Tstg storage temperature -55 175 °C

Tjjunction temperature -55 175 °C

Tsld(M) peak soldering

temperature

- 260 °C

Source-drain diode

ISsource current Tmb = 25 °C - 120 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 780 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-

source avalanche energy

ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

Fig. 4

- 542 mJ

[1] Continuous current is limited by package

Product data sheet 3 September 2018 2 / 12

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

Tmb (°C)

0 20015050 100

03aa16

120

Pder

(%)

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

aaa-028866

0 25 50 75 100 125 150 175 200

100

150

200

Tmb (°C)

(A)(A)

(1)(1)

VGS ≥ 10 V

(1) Capped at 120A due to package

Fig. 2. Continuous drain current as a function of

mounting base temperature

aaa-028222

10-1 1 10 102103

10-1

102

103

VDS (V)

(A)(A)

DCDC

100 ms100 ms

10 ms10 ms

1 ms1 ms

100 µs100 µs

tp = 10 µstp = 10 µs

Limit RDSon = VDS / ID

Tmb = 25 °C; IDM is a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

Product data sheet 3 September 2018 3 / 12

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

aaa-028867

10-3 10-2 10-1 1 10

102

103

tAL (ms)

IAL

(A)(A)

(1)(1)

(2)(2)

(1) Tj (init) = 25 °C; (2) Tj (init) = 100 °C

Fig. 4. Avalanche rating; avalanche current as a function of avalanche time

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from

junction to mounting

base

Fig. 5 - 0.3 0.37 K/W

Rth(j-a) thermal resistance from

junction to ambient

- 50 - K/W

aaa-028868

10-6 10-5 10-4 10-3 10-2 10-1 1

10-3

10-2

10-1

tp (s)

Zth(j-mb)

(K/W)(K/W)

single shotsingle shot

δ = 0.5δ = 0.5

0.20.2

0.10.1

0.050.05

0.020.02 P

δ = T

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

Product data sheet 3 September 2018 4 / 12

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

Symbol Parameter Conditions Min Typ Max Unit

ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-source

breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V

ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 10;

Fig. 11

2 2.66 4 V

ID = 1 mA; VDS=VGS; Tj = 175 °C;

Fig. 11

1 - - V

VGS(th) gate-source threshold

voltage

ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 11 - - 4.6 V

VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.026 2 µAIDSS drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 12

- 3.36 3.95 mΩ

VGS = 10 V; ID = 25 A; Tj = 100 °C;

Fig. 13

- - 7.3 mΩ

RDSon drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 175 °C;

Fig. 13

- - 10.7 mΩ

RGgate resistance f = 1 MHz 0.49 0.98 1.96 Ω

Dynamic characteristics

ID = 25 A; VDS = 50 V; VGS = 10 V;

Fig. 14; Fig. 15

- 176 246 nCQG(tot) total gate charge

ID = 0 A; VDS = 0 V; VGS = 10 V - 71 99 nC

QGS gate-source charge - 49.5 74 nC

QGS(th) pre-threshold gate-

source charge

- 30 - nC

QGS(th-pl) post-threshold gate-

source charge

- 19.7 - nC

QGD gate-drain charge

ID = 25 A; VDS = 50 V; VGS = 10 V;

Fig. 14; Fig. 15

- 45.2 77 nC

VGS(pl) gate-source plateau

voltage

ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 - 4.9 - V

Ciss input capacitance - 11692 16370 pF

Coss output capacitance - 657 887 pF

Crss reverse transfer

capacitance

VDS = 50 V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C; Fig. 16

- 353 494 pF

td(on) turn-on delay time - 40 60 ns

trrise time - 64 97 ns

td(off) turn-off delay time - 98 147 ns

tffall time

VDS = 50 V; RL = 2 Ω; VGS = 10 V;

RG(ext) = 5 Ω

- 69 104 ns

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.79 1.2 V

trr reverse recovery time - 70 91 ns

Qrrecovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 50 V; Fig. 18 - 195 254 nC

Product data sheet 3 September 2018 5 / 12

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

aaa-028869

01234

120

160

VDS (V)

(A)(A)

3.5 V3.5 V

4.5 V4.5 V

5 V5 V

VGS = 5.5 VVGS = 5.5 V

6 V6 V

6.5 V6.5 V7 V7 V10 V10 V

Tj = 25 °C

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

aaa-028870

0 4 8 12 16 20

VGS (V)

RDSon

(mΩ)(mΩ)

Tj = 25 °C; ID = 25 A

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

aaa-028871

0 20 40 60 80 100

100

ID (A)

gfs

(S)(S)

Tj = 25 °C; VDS = 8 V

Fig. 8. Forward transconductance as a function of

drain current; typical values

aaa-028872

012345678

120

160

VGS (V)

(A)(A)

Tj = 25°CTj = 25°C175°C175°C

VDS = 8 V

Fig. 9. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

Product data sheet 3 September 2018 6 / 12

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

aaa-028873

012345

10-6

10-5

10-4

10-3

10-2

10-1

VGS (V)

(A)(A)

TypTypMinMin MaxMax

Tj = 25 °C; VDS = 5 V

Fig. 10. Sub-threshold drain current as a function of

gate-source voltage

aaa-028874

-60 -30 0 30 60 90 120 150 180

Tj (°C)

VGS(th)

(V)(V)

TypTyp

MaxMax

MinMin

ID = 1 mA ; VDS = VGS

Fig. 11. Gate-source threshold voltage as a function of

junction temperature

aaa-028875

0 20 40 60 80 100 120 140 160

ID (A)

RDSon

(mΩ)(mΩ) 5 V5 V 5.5 V5.5 V 6 V6 V

6.5 V6.5 V

7 V7 V

8 V8 V

VGS = 10 VVGS = 10 V

Tj = 25 °C

Fig. 12. Drain-source on-state resistance as a function

of drain current; typical values

003aak756

-60 -30 0 30 60 90 120 150 180

0.6

1.2

1.8

2.4

Tj (°C)

Fig. 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

Product data sheet 3 September 2018 7 / 12

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

aaa-028877

0 40 80 120 160 200

QG (nC)

VGS

(V)(V)

50 V50 V

VDS = 20 VVDS = 20 V

80 V80 V

Tj = 25 °C; ID = 25 A

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

Fig. 15. Gate charge waveform definitions

aaa-028878

10-1 1 10 102

102

103

104

105

VDS (V)

(pF)(pF)

Ciss

Coss

Crss

VGS = 0 V; f = 1 MHz

Fig. 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

aaa-028879

0 0.2 0.4 0.6 0.8 1 1.2

120

160

VSD (V)

(A)(A)

Tj = 25°CTj = 25°C175°C175°C

VGS = 0 V

Fig. 17. Source-drain (diode forward) current as a

function of source-drain (diode forward)

voltage; typical values

003aal160

t (s)

(A)

IRM

0.25 IRM

tatb

trr

Fig. 18. Reverse recovery timing definition

Product data sheet 3 September 2018 8 / 12

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

10. Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT404

sot404_po

06-03-16

13-02-25

Unit

max

nom

min

4.5

4.1

1.40

1.27

1.45

1.05

0.64

0.46

11 1.6

1.2

Dimensions (mm are the original dimensions)

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404

A1b

0.85

0.60

b2c D D1E e HDLpQ

2.54

15.8

14.8

2.6

2.2

10.3

9.7

2.9

2.1

0 5 mm

scale

e e

1 3

mounting

base

Fig. 19. Package outline D2PAK (SOT404)

Product data sheet 3 September 2018 9 / 12

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

11. Soldering

SOT404Footprint information for reflow soldering of D2PAK package

sot404_fr

occupied area

solder paste

solder resist

solder lands

Issue date

Dimensions in mm

17-05-24

17-05-26

5.40

8.075

2.15

1.50

0.30

3.00

2.25

4.60

8.358.15

7.95

4.85

8.275

16.35

1.55

0.20

1.30

2.54

1.20

0.30

10.50

10.60

1.50

10.85

3.10

1.700.20

7.50

7.40

Fig. 20. Reflow soldering footprint for D2PAK (SOT404)

Product data sheet 3 September 2018 10 / 12

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

12. Legal information

Data sheet status

Document status

[1][2]

Product

status [3]

Definition

Objective [short]

data sheet

Development This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification This document contains data from

the preliminary specification.

Product [short]

data sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

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changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

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Product data sheet 3 September 2018 11 / 12

Nexperia PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

Contents

1. General description...................................................... 1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data.................................................... 1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Limiting values............................................................. 2

8. Thermal characteristics............................................... 4

9. Characteristics.............................................................. 4

10. Package outline.......................................................... 9

11. Soldering................................................................... 10

12. Legal information......................................................11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 3 September 2018

Product data sheet 3 September 2018 12 / 12