PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
3 September 2018 Product data sheet
1. General description
Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified
to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low
RDSon and a very strong linear-mode (SOA) performance.
PSMN3R7-100BSE complements the latest "hot-swap" controllers - robust enough to withstand
substantial inrush currents during turn on, low RDSon to minimize I2R losses and deliver optimum
efficiency when turned fully ON.
2. Features and benefits
Fully optimized Safe Operating Area (SOA) for superior linear mode operation
Low RDSon for low I2R conduction losses
3. Applications
Hot swap
Load switch
Soft start
E-fuse
Telecommunication systems based on a 48 V backplane/supply rail
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 100 V
IDdrain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - - 120 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - - 780 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 405 W
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
- 3.36 3.95
Dynamic characteristics
QGD gate-drain charge - 45.2 77 nC
QG(tot) total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15 - 176 246 nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalanche
energy
ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
- - 542 mJ
[1] Continuous current is limited by package
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 D drain[1]
3 S source
mb D mounting base; connected to
drain
mb
1 3
2
D2PAK (SOT404)
S
D
G
mbb076
[1] It is not possible to make connection to pin 2.
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN3R7-100BSE D2PAK plastic, single-ended surface-mounted package (D2PAK); 3
terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x
4.3 mm body
SOT404
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 100 V
VGS gate-source voltage -20 20 V
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 405 W
VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 120 AIDdrain current
VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 120 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 780 A
Tstg storage temperature -55 175 °C
Tjjunction temperature -55 175 °C
Tsld(M) peak soldering
temperature
- 260 °C
Source-drain diode
ISsource current Tmb = 25 °C - 120 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 780 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalanche energy
ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
- 542 mJ
[1] Continuous current is limited by package
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 2 / 12
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
Tmb (°C)
0 20015050 100
03aa16
40
80
120
Pder
(%)
0
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
aaa-028866
0 25 50 75 100 125 150 175 200
0
50
100
150
200
Tmb (°C)
ID
ID
(A)(A)
(1)(1)
VGS ≥ 10 V
(1) Capped at 120A due to package
Fig. 2. Continuous drain current as a function of
mounting base temperature
aaa-028222
10-1 1 10 102103
10-1
1
10
102
103
VDS (V)
ID
ID
(A)(A)
DCDC
100 ms100 ms
10 ms10 ms
1 ms1 ms
100 µs100 µs
tp = 10 µstp = 10 µs
Limit RDSon = VDS / ID
Limit RDSon = VDS / ID
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 3 / 12
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
aaa-028867
10-3 10-2 10-1 1 10
1
10
102
103
tAL (ms)
IAL
IAL
(A)(A)
(1)(1)
(2)(2)
(1) Tj (init) = 25 °C; (2) Tj (init) = 100 °C
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from
junction to mounting
base
Fig. 5 - 0.3 0.37 K/W
Rth(j-a) thermal resistance from
junction to ambient
- 50 - K/W
aaa-028868
10-6 10-5 10-4 10-3 10-2 10-1 1
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
Zth(j-mb)
(K/W)(K/W)
single shotsingle shot
δ = 0.5δ = 0.5
0.20.2
0.10.1
0.050.05
0.020.02 P
t
tp
T
tp
δ = T
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 4 / 12
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
Symbol Parameter Conditions Min Typ Max Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-source
breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V
ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 10;
Fig. 11
2 2.66 4 V
ID = 1 mA; VDS=VGS; Tj = 175 °C;
Fig. 11
1 - - V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 11 - - 4.6 V
VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.026 2 µAIDSS drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
- 3.36 3.95
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13
- - 7.3
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13
- - 10.7
RGgate resistance f = 1 MHz 0.49 0.98 1.96 Ω
Dynamic characteristics
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
- 176 246 nCQG(tot) total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V - 71 99 nC
QGS gate-source charge - 49.5 74 nC
QGS(th) pre-threshold gate-
source charge
- 30 - nC
QGS(th-pl) post-threshold gate-
source charge
- 19.7 - nC
QGD gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
- 45.2 77 nC
VGS(pl) gate-source plateau
voltage
ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 - 4.9 - V
Ciss input capacitance - 11692 16370 pF
Coss output capacitance - 657 887 pF
Crss reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
- 353 494 pF
td(on) turn-on delay time - 40 60 ns
trrise time - 64 97 ns
td(off) turn-off delay time - 98 147 ns
tffall time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
- 69 104 ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.79 1.2 V
trr reverse recovery time - 70 91 ns
Qrrecovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V; Fig. 18 - 195 254 nC
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 5 / 12
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
aaa-028869
01234
0
40
80
120
160
VDS (V)
ID
ID
(A)(A)
3.5 V3.5 V
4.5 V4.5 V
5 V5 V
VGS = 5.5 VVGS = 5.5 V
6 V6 V
6.5 V6.5 V7 V7 V10 V10 V
Tj = 25 °C
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
aaa-028870
0 4 8 12 16 20
0
5
10
15
20
25
30
VGS (V)
RDSon
RDSon
(mΩ)(mΩ)
Tj = 25 °C; ID = 25 A
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-028871
0 20 40 60 80 100
0
20
40
60
80
100
ID (A)
gfs
gfs
(S)(S)
Tj = 25 °C; VDS = 8 V
Fig. 8. Forward transconductance as a function of
drain current; typical values
aaa-028872
012345678
0
40
80
120
160
VGS (V)
ID
ID
(A)(A)
Tj = 25°CTj = 25°C175°C175°C
VDS = 8 V
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 6 / 12
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
aaa-028873
012345
10-6
10-5
10-4
10-3
10-2
10-1
VGS (V)
ID
ID
(A)(A)
TypTypMinMin MaxMax
Tj = 25 °C; VDS = 5 V
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
aaa-028874
-60 -30 0 30 60 90 120 150 180
0
1
2
3
4
5
Tj (°C)
VGS(th)
VGS(th)
(V)(V)
TypTyp
MaxMax
MinMin
ID = 1 mA ; VDS = VGS
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
aaa-028875
0 20 40 60 80 100 120 140 160
0
5
10
15
20
25
30
ID (A)
RDSon
RDSon
(mΩ)(mΩ) 5 V5 V 5.5 V5.5 V 6 V6 V
6.5 V6.5 V
7 V7 V
8 V8 V
VGS = 10 VVGS = 10 V
Tj = 25 °C
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
003aak756
-60 -30 0 30 60 90 120 150 180
0
0.6
1.2
1.8
2.4
3
Tj (°C)
aa
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 7 / 12
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
aaa-028877
0 40 80 120 160 200
0
2
4
6
8
10
QG (nC)
VGS
VGS
(V)(V)
50 V50 V
VDS = 20 VVDS = 20 V
80 V80 V
Tj = 25 °C; ID = 25 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aaa508
VGS
VGS(th)
QGS1
QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 15. Gate charge waveform definitions
aaa-028878
10-1 1 10 102
102
103
104
105
VDS (V)
CC
(pF)(pF)
Ciss
Ciss
Coss
Coss
Crss
Crss
VGS = 0 V; f = 1 MHz
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
aaa-028879
0 0.2 0.4 0.6 0.8 1 1.2
0
40
80
120
160
VSD (V)
IS
IS
(A)(A)
Tj = 25°CTj = 25°C175°C175°C
VGS = 0 V
Fig. 17. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
003aal160
0
t (s)
ID
(A)
IRM
0.25 IRM
tatb
trr
Fig. 18. Reverse recovery timing definition
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 8 / 12
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
10. Package outline
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT404
sot404_po
06-03-16
13-02-25
Unit
mm
max
nom
min
4.5
4.1
1.40
1.27
1.45
1.05
0.64
0.46
11 1.6
1.2
A
Dimensions (mm are the original dimensions)
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404
A1b
0.85
0.60
b2c D D1E e HDLpQ
2.54
15.8
14.8
2.6
2.2
10.3
9.7
2.9
2.1
0 5 mm
scale
e e
E
b
D1
HD
D
b2
Q
Lp
c
A1
A
1 3
2
mounting
base
Fig. 19. Package outline D2PAK (SOT404)
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 9 / 12
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
11. Soldering
SOT404Footprint information for reflow soldering of D2PAK package
sot404_fr
occupied area
solder paste
solder resist
solder lands
Issue date
Dimensions in mm
17-05-24
17-05-26
5.40
8.075
2.15
1.50
0.30
3.00
2.25
4.60
8.358.15
7.95
4.85
8.275
16.35
1.55
0.20
1.30
2.54
1.20
0.30
10.50
10.60
1.50
10.85
3.10
1.700.20
7.50
7.40
Fig. 20. Reflow soldering footprint for D2PAK (SOT404)
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 10 / 12
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
12. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification This document contains data from
the preliminary specification.
Product [short]
data sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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Short data sheet — A short data sheet is an extract from a full data sheet
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 11 / 12
Nexperia PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data.................................................... 1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 2
8. Thermal characteristics............................................... 4
9. Characteristics.............................................................. 4
10. Package outline.......................................................... 9
11. Soldering................................................................... 10
12. Legal information......................................................11
© Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 3 September 2018
PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 September 2018 12 / 12