2008 .9 .11 1/2
SEMICONDUCTOR
TECHNICAL DATA PG15FBUSC
Single Line TVS Diode for ESD
Protection in Portable Electronics
Revision No : 1
Protection in Portable Electronics Applications.
FEATURES
·350 Watts peak pulse power (tp=8/20μs)
·Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 15A(tp=8/20μs)
·Bidirectional Type Pin Configuration Structure.
·Small package for use in portable electronics.
·Suitable replacement for Multi-Layer Varistors in ESD protection applications.
·Protects on I/O or power line.
·Low clamping voltage.
·Low leakage current.
APPLICATIONS
·Cell phone handsets and accessories.
·Microprocessor based equipment.
·Personal digital assistants (PDA’s)
·Notebooks, desktops, & servers.
·Portable instrumentation.
·Pagers peripherals.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Peak Pulse Power (tp=8/20μs) PPK 350 W
Peak Pulse Current (tp=8/20μs) IPP 12 A
Operating Temperature Tj-55~150 ℃
Storage Temperature Tstg -55~150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Stand-Off Voltage VRWM - - - 15 V
Reverse Breakdown Voltage VBR It=1mA 16.7 - - V
Reverse Leakage Current IRVRWM=15V - - 1 μA
Clamping Voltage VCIPP=12A, tp=8/20μs- - 29 V
Junction Capacitance CJVR=0V, f=1MHz - - 75 pF
Lot No.