2SB1509-S - ON Semiconductor L.L.C.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP/NPN Epitaxial Planar Silicon Transistors

High-Current Switching Applications

Ordering number:ENN3715

2SB1509/2SD2282

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

51304TN (PC)/N1098HA (KT)/5111MH, JK (KOTO) No.3715–1/4

Package Dimensions

unit:mm

2039D

[2SB1509/2SD2282]

˚C

Electrical Characteristics at Ta = 25˚C

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PML

( ) : 2SB1509

Specifications

Absolute Maximum Ratings at Ta = 25˚C

* : The 2SB1509/2SD2282 are classified by 1A hFE as follows : Continued on next page.

knaRQRS

hEF 041ot07002ot001082ot041

Tc=25˚C

Applications

· Relay drivers, high-speed inverters, converters.

Features

· Low collector-to-emitter saturation voltage :

VCE(sat)=–0.5V max.

· Wide ASO and highly registant to breakdown.

· Micaless package facilitating easy mounting.

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

OBC 06)–(V

egatloVrettimE-ot-rotcelloCV

OEC 05)–(V

egatloVesaB-ot-rettimEV

OBE 6)–(V

tnerruCrotcelloCI

C51)–(A

)esluP(tnerruCrotcelloCI

PC 03)–(A

noitapissiDrotcelloCP

C0.3W

05W

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

tnerruCffotuCrotcelloCI

OBC VBC I,V04)–(= E0=1.0Am

tnerruCffotuCrettimEI

OBE VBE I,V4)–(= C0=1.0Am

niaGtnerruCCD hEF 1V

EC I,V2)–(= CA1)–(=*07*082

hEF 2V

EC I,V2)–(= CA8)–(=03

tcudorPhtdiwdnaB-niaGf

TVEC I,V5)–(= CA1)–(=02zHM

16.0

2.0

2.8

1.0

4.0 21.0

5.0

8.0

22.0

20.4

5.6 3.1

2.0

0.6

5.45

123

3.5

3.4

2SB1509/2SD2282

No.3715–2/4

Switching Time Test Circuit

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

egatloVnoitarutaSrettimE-ot-rotcelloCV

)tas(EC ICI,A8)–(= BA4.0)–(= )62.0–()5.0–(V

81.04.0V

egatloVnwodkaerBesaB-ot-rotcelloCV

OBC)RB( ICI,Am1)–(= E0=06)–(V

egatloVnwodkaerBrettimE-ot-rotcelloCV

OEC)RB( ICR,Am1)–(= EB =∞05)–(V

egatloVnwodkaerBesaB-ot-rettimEV

OBE)RB( IEI,Am1)–(= C0=6)–(V

emiTNO-nruTt

no .tiucrictsetdeificepseeS2.0sµ

emiTegarotSt

gts .tiucrictsetdeificepseeS )5.0(sµ

0.1sµ

emiTllaFt

f.tiucrictsetdeificepseeS1.0sµ

Continued from preceding page.

PW=20µs

tr, tf≤15ns

INPUT

20V

50Ω

1Ω

IB1

IB2

100µF 470µF

--5V

10Ω

OUTPUT

10IB1= --10IB2=IC=2A

(For PNP, the porarity is reversed.)

100Ω

ITR09857

IC -- VBE(on)

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4

--8

--4

--12

--20

--16

2SB1509

VCE= --2V

ITR09858

IC -- VBE(on)

0 0.2 0.4 0.80.6 1.0 1.2 1.4

2SD2282

VCE=2V

ITR09855

IC -- VCE

0 --0.4--0.2 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0

--2

--4

--6

--8

--10

--12

--14

--16

--18

--20

IB=0

--60mA

--40mA

--20mA

--1A

ITR09856

IC -- VCE

0 0.40.2 0.80.6 1.21.0 1.6 1.81.4 2.0

IB=0

--600mA

--200mA

--100mA

--80mA

2SB1509

600mA

200mA

80mA

60mA

40mA

2SD2282

20mA

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Base-to-Emitter Voltage, VBE(ON) –V Base-to-Emitter Voltage, VBE(ON) –V

Collector Current, IC–A

2SB1509/2SD2282

No.3715–3/4

ITR09865

A S O

10ms

1ms

--1.0

355

5--10 --100

--1.0

--10

--0.1

ICP=–30A

IC=–15A

DC operation

ITR09861

VCE(sat) -- IC

5--0.1 2

--0.01 2335

--1.0 23 5 235

--10

--0.1

--1.0

--10

--0.01

IC / IB=

ITR09864

VBE(sat) -- IC

55777

1.0 2

0.1 2323 5 10

323

1.0

100

ITR09862

VCE(sat) -- IC

50.1 2

0.01 2335

1.0 235 235

0.1

1.0

0.01

ITR09863

VBE(sat) -- IC

55777

--1.0 2

--0.1 2323 5 --10

323

--1.0

--10

--100

IC / IB=10,

100ms

ITR09866

A S O

1.0

355

510 100

1.0

0.1

ITR09859

hFE -- IC

--0.1 32357 7

--1.0 --10

52357 2 32

100

1000

ITR09860

hFE -- IC

0.1 3235 1.0 10

523 57 7 7232

100

1000

VCE=2V

VCE= --2V

2SB1509

IC / IB=

2SD2282

500µs

200µs

PT≤100µs

10ms

1ms

ICP=30A

IC=15A

DC operation

100ms

500µs

PT≤200µs

2SB1509 2SD2282

IC / IB=10,

2SD2282

DC Current Gain, hFE

Collector Current, IC–A

DC Current Gain, hFE

Collector Current, IC–A

Collector-to-Emitter

Saturation Voltage, VCE(sat) –V

Collector Current, IC–A

Base-to-Emitter

Saturation Voltage, VBE(sat) –V

Collector Current, IC–A

Base-to-Emitter

Saturation Voltage, VBE(sat) –V

Collector Current, IC–A

Collector-to-Emitter

Saturation Voltage, VCE(sat) –V

2SB1509

100µs to 100ms : Single pulse

Tc=25°C

2SD2282

100µs to 100ms : Single pulse

Tc=25°C

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –VCollector-to-Emitter Voltage, VCE –V

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of May, 2004. Specifications and information herein are subject to

change without notice.

2SB1509/2SD2282

PS No.3715–4/4

0 20 40 60 80 100 120 140 160

0.4

0.8

1.2

1.6

2.0

3.2

2.4

2.8

3.0

PC -- Ta

ITR09867

2SB1509 / 2SD2282

No heat sink

0 20 40 60 80 100 120 140 160

PC -- Ta

ITR09868

2SB1509 / 2SD2282

Collector Dissipation, PC–W

Ambient Temperature, Ta –˚C

Collector Dissipation, PC–W

Ambient Temperature, Ta –˚C