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KSC2334 KSC2334 High Speed Switching Industrial Use * Complement to KSA1010 TO-220 1 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted 1.Base 2.Collector Parameter 3.Emitter Symbol VCBO Collector-Base Voltage Value 150 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 100 V 7 IC Collector Current (DC) 7 V A ICP *Collector Current (Pulse) 15 A IB Base Current (DC) 3.5 A PC Collector Dissipation (TC=25C) 40 W Collector Dissipation (TA=25C) 1.5 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C * PW300s, Duty Cycle10% Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = 5A, IB1= 0.5A, L = 1mH Min. 100 VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 5A, IB1 = -IB2 = 0.5A VBE(off) = -5V, L = 180H, Clamped 100 V VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 10A, IB1 =1A, IB2 = -0.5A, VBE(off) = -5V, L = 180H, Clamped 100 V ICBO Collector Cut-off Current VCB = 100, IE = 0 ICER Collector Cut-off Current VCE = 100V, RBE = 51@TC =125C ICEX1 ICEX2 Collector Cut-off Current VCE = 100V, VBE(off) = -1.5V VCE = 100V, VBE(off) = -1.5V @ TC= 125C IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE1 hFE2 hFE3 * DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A VCE = 5V, IC = 5A 40 40 20 Max. Units V 10 A 1 mA 10 1 A mA 10 A 240 VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 0.5A 0.6 VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 0.5A 1.5 V tON Turn On Time 0.5 s tSTG Storage Time 0.5 s tF Fall Time VCC = 50V, IC = 5A IB1 = -IB2 = 0.5A RL = 10 1.5 s V * Pulse Test: PW350s, Duty Cycle2%Pulsed hFE Classification Classification R O Y hFE2 40 ~ 80 70 ~ 140 120 ~ 240 (c)2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 KSC2334 4 1000 IB = 90mA VCE = 5V IB = 70mA IB = 80mA IB = 60mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 IB = 100 mA Typical Characteristics IB = 50mA 3 IB = 40mA IB = 30mA 2 IB = 20mA 1 100 10 IB = 10mA 1 0.01 0 0 1 2 3 4 5 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain 10 100 IC/IB = 10 V BE(sat) 1 0.1 V CE(sat) 0.01 0.01 0.1 1 50 s 10 0 30 s 0 s 10 Di Lim ssip ite atio d n 1m s 10 ms 10 0m s 1 d ite m Li IC[A], COLLECTOR CURRENT IC MAX. (Pulse) b S/ VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 0.1 0.01 10 1 10 IC[A], COLLECTOR CURRENT 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 160 50 45 PC[W], POWER DISSIPATION 140 120 dT(%), Ic DERATING 1 100 80 S/b Limited 60 Dissipation Limited 40 20 40 35 30 25 20 15 10 5 0 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 5. Derating Curve of Safe Operating Areas (c)2001 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 200 225 250 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, August 2001 SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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