SIEMENS FEATURES + Internal RBE for High Stability + Current Transfer Ratio is Tested at 2.0 mA and 0.7 mA Input IL/ILD/ILQ66 Series: - 1,100% min. at IF=2 mA, Vep=10V - 2,300% min. at l-F=2 MA, Vep=10 V - 3,400% min. at l-=0.7 mA, Vefp=10 V - 4,500% min. at l-=2 MA, Vep=5 V * Four Available CTR Categories per Package Type * BV ceq>60 V + Standard DIP Packages + Underwriters Lab File #E52744 * VDE 0884 Available with Option 1 DESCRIPTION IL66, ILD66, and ILQ66 are optically coupled isola- tors employing Gallium Arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isclation between driving and load cir- cuits, with no crosstalk between channels. Maximum Ratings Emitter (Each Channel) Peak Reverse Voltage... ee eceeeeeeterteeees 6V Continuous Forward Current... 60 mA Power Dissipation at 25C ooo. 100 mW Derate Linearly from 25C oo... 1.33 mW/PC Detector (Each Channel) Power Dissipation at 25C Ambient........... 150 mW Derate Linearly from 25G 200... 2.0 mWPC Package Isolation Test Voltage (t=1 sec.) Ce eee eee eee nee e ie 5300 VACams Total Package Power Dissipation at 25C VLG occ eect ect eeeettteeesteeeeneaees 250 mW es sr 400 mW LOB cece et eect ee cceetteee 500 mW Derate Linearly from 25C ILO 8 ee eee eee teeeteeeteeeteeneenee renee 3.3 MWIG | = 5.33 mWPC [LOQG6 oe eee e eect ttett tenes 6.67 mW/G CEEP AGE... eee 7 min mm CIOAPANCE ott tte erie etee 7 min mm Gomparative Tracking Index... 175 Isolation Resistance Vig= 500 V, Ta=25C ee >10'7 9 Vig= 500 V, Ta=100C oe >101 Oo Storage Temperature ......0..00000... 65C to +125G Operating Temperature................ 65C to + 100C Lead Soldering Time at 260C ooo. 10 sec. SINGLE CHANNEL IL66 SERIES DUAL CHANNEL ILD66 SERIES QUAD CHANNEL ILQ 66 SERIES PHOTODARLINGTON OPTOCOUPLER Dimensions in inches (mm) Bh oy PinOnel.D. 248 C0 l Anoce aE; : ae Base 256 woo) Calhode [2 | sah Collector KT TgT Ts] 9335 (8.50) Ne [3| |4 | Emitter 343 (8.70) 300 (7.62) a 80} { he min. | .130 (3.30 fo 711 a .150 (3.81 ; I j ese! 110 (2.79 18 (0.4 020 (.051) min 010 150 (3.84 018 (0.45 020 {. ; 022 (088) 031 (0.80 i014 (38 > 035 (0.90 300 (7.62 100 (2.54) Typ. B47 (8.82) Pin One I.D. i op 2 me i Anode [1] ke Emitter 255 (6.48) Cathode ai 17] Collector 268 (6.81) Cathode [3/5 [6] Collector te is fl ia Anode ata Emitter __ 379 (9.63) 3908.91} 305 Typ. .75) Typ. 1030 (.76) .130 (3.30) | 045 (1.14) -150 (3.81) bateatah 4 4 AHHH TYP. w_| 10". 92) 3 , 43) 080 (76) oo Ce) 040 (1.02) 008 ( 022 (88) 100 (2.54) T O12 (.30) . . yp. Anode [1] haart Emitter Pin cathode tT H5] Collector One Cathode [3/7 14] Collector See ere Anode (a}t Sp Emitter 256 (6.48) ee H2| Emitter 268 (6.81) cothode [| Hi] Collector oj Waal tant Gaal ca Cathode a 10] Collector _ 779 (19.77 cs 790 poo Anode [8 | ha Emitter 030 (.76) .305 Typ, | fet .045 (1.14) .180 (3.30) ear ae 7-150 (3.81) . : | | | 1) |} 4 Teun Ae Typ. L115 (2.92) 18a 3076), 399 135 (3.43) 018. 040 (1.02 022 (56) 008 (.20)_.| 100 (2.54) Typ. 012 (.30) 51Electrical Characteristics (T,)=25C) Symbol Min. Typ. Max.. Unit Condition GaAs Emitter Forward Voltage 1.25 1.5 V Ilp=20 mA Reverse Current 0.1 10 LA Vp=6.0 V Capacitance 2 pF Vp=O V Photodarlington Breakdown Voltage Collector-Emitter BYcEo 60 Vv Io=1 mA, Ip=O Collector-Base (IL66) BYcRo 60 Vv Ig=10 WA Leakage Current, leEo 1.0 100 nA Vop=50 V, Ip=0 Collector-Emitter Capacitance, Collector-Emitter 3.4 pF Vop=10V Coupled Characteristics Current Transfer Ratio CTR IL/ILD/ALQ66-1 100 400 % lpF=2 MA, Vop=10 V ILLD/ALQ66-2 300 500 % Ip=2 MA,Vog=19 V IL/ILD/ALQ66-3 400 500 % Ip=0.7 MA, Veg=10 V ILILD/ALQ66-4 500 750 % lpe2 mA, Vog=5 V Saturation Voltage, VeEsat 0.9 1.0 V Ig=10 mA, Ip=10 mA Collector- Emitter Rise Time -1, -2, -4 tr 200 ps Vec=10 Fall Time -1, -2, -4 te 200 ps lp=2 mA, Re=100 2 Rise Time -3 tp 200 ps |-=0.7 mA Fall Time -3 te 200 us Voc=10 V, Rp=100 2 Figure 1. Forward voltage versus forward current VF - Forward Voltage - V 141 1.3 1.2 1.1 1.9 0.9 0.8 0.7 A Pir arn rnnnnern nr ree i nnn REE EEE EEE EEE . jth ninnveisinveveeneneieenaseens Ta = 100C ere EE rere ere ete ee ete, 1 10 100 IF - Forward Current - mA Figure 2. Normalized non-saturated and saturated CTRee versus LED curren NCTRce - Normalized CTRce 2.0 15 1.0 05 0.0 Normalized to: : Ta = 25C : pm Yigg = Byrnes IF = i Vee=5V feceeeseeeeseneseeee diets dbel ees : peng Hrnnnnconnninnnwinnniannnnnnnnnnt ener Vee =1 4 1 10 100 IF - LED Current- mA Figure 3. Normalized non-saturated and saturated CTRece versus LED current 12 g Normalizedto: i : 40) frm 18 = 25 Corerennrnernnnnhiennnnnnn| F , Vee =5V Vee =5V 3 Os |F = 10 Prigesefest eclipse ; AOA AM RRR R RE Ac 3 0.6 Previn Sree E -_ 2 Od Bennnsnnennenentanenns ronnie enced CLAMMAAMAAAMAM, VB Bhavecnrerreti gh cnet titer denny & : Vee = 1 5 0.0 i = 1 1 10 100 1000 IF - LED Current - mA Figure 4. Non-saturated and saturated collector emitter current versus LED current 1ooo0 i Vce=5 1000 pron ei 4 eaeenecersiesee sgtlecmss.s.mevitesn nee enn 100 Pannen peer eey ees retearere: YO peste ets ee sete een nnee : : enerhrrndrcoee : 5 : F E E 5 e : F E E 5 : F F E 5 F : o = Ice - Collector-emitter current - mA a terrace 001 ; A 1 1 100 IF - LED Current - mA ILALDALQ66 5-2Figure 5. current 1000 Collector-base photocurrent versus LED 100 Icb - Photocurrent- wa 10 fonvnnrrnncnncncnnn TD parncnnncnenrnnnn . ; ; 2 prc oed: * PRED IL EEE I TELE I TEED E EE Ceerereeere i : : : 1 10 100 IF - LED Current - mA Figure 6. Collector-emitter current versus LED current 10000 1000 190 10 1 4d 01 007 Ice - Collector-emitter current - mA porrennegpies! nn A OMNI! SAAC wen ESTES EEE ESL SLAVE I SS Ta = 25C; Vce=5V einer reveenenesiirnnrrnrnens Vce 4 SO BASIS oo NI errrethee Merhecrre tier e resin : reer ner. ee : tenner tener, AAMBALLRALEMAREH AES ROSEMROL ARCOLA REBAR ERROR E ener nes Pree rr rn 1 10 100 Ib - Base Current - ps 1000 Figure 7. Non-saturated and saturated HFE versus LED current 25000 20000 15000 10000 HFE - Forward Gain 5000 0 A 4 ry Il Nw an 3 oo t t Son nen enna nentegfien niga nanny : Vee =5V r penirennrennnnnny RAMA AREER teeeenessslies Vo | Yh Freee rrenierrerrere 10 100 1000 Ib - Base Current - pA Figure 8. High/low propagation delay versus collector load resistance and LED current 50 f 3 a Qo Delay - us he ao 2202 : : : terran a oer Vin = 5 Vv ae 3 i Wih=1.5 5 Ar rensannnnninrrensannnnthnnnssnny 3 3 : i ; seveuststen J csessustanafeeensntvee 2 5 5 2 5 : 7 s 2 5 3 i seeenaee Bac aeeeneseeeeuembesseeeneneeoeane ; ; ; : - = Ta = 25C Eeserress| tpHL - High/Low Propagation 5 10 15 20 IF - LED Current - mA Figure 9. Low/high propagation delay versus collector load resistance and LED current 150] ro Terry rrr < Q ao " a <= terror, Vih=15V TIT i rrr ten Bore nase ennenerenenineceicireenesene ensure tinier rere Bee | cm eer Re aro. wee TOKO na 2K Q ane i nN Dt) 5 3 3 i tpLH - Low/High Propagation Delay - ps ~d uo a 5 10 IF - LED Current Figure 10. Switching waveform IF -mA -tp tR ~ tPLH j VmH=1.5 tH Figure 11. Switching schematic Voo=10 V F=10 KHz, DF=50% 20 ILALDALQ66