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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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FCPF150N65FL1 N-Channel SuperFET(R) II FRFET(R) MOSFET 650 V, 24 A, 150 m Features Description * 700 V @ TJ = 150C SuperFET(R) II MOSFET is Fairchild Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. SuperFET II FRFET(R) MOSFET combines a faster and more rugged intrinsic body diode performance with fast switching, aimed at achieving better reliability and efficiency especially in resonant switching applications. SuperFET II FRFET is very suitable for the switching power applications such as server/telecom power, Solar inverter, FPD TV power, computing power, lighting and industrial power applications. * Typ. RDS(on) = 133 m * Ultra Low Gate Charge (Typ. Qg = 72 nC) * Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF) * 100% Avalanche Tested * RoHS Compliant Applications * Telecom/Server Power Supplies * Solar Inverters * Computing Power Supplies * FPD TV Power/Lighting D G D S G TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4.7 A EAR Repetitive Avalanche Energy (Note 1) 2.98 mJ dv/dt Parameter FCPF150N65FL1 650 - DC 20 - AC (f > 1 Hz) - Continuous (TC = 25oC) - Pulsed A 14.9* (Note 1) 72* A (Note 2) 663 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL V 30 24* - Continuous (TC = 100oC) Unit V - Derate Above 25oC V/ns 50 39 W 0.31 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCPF150N65FL1 RJC Thermal Resistance, Junction to Case, Max. 3.2 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 (c)2015 Fairchild Semiconductor Corporation FCPF150N65FL1 Rev. 1.0 1 Unit oC/W www.fairchildsemi.com FCPF150N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET May 2015 Part Number FCPF150N65FL1 Top Mark FCPF150N65F Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. VGS = 0 V, ID = 10 mA, TJ = 25C 650 - - VGS = 0 V, ID = 10 mA, TJ = 150C 700 - - - 0.72 - Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage BVDSS / TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10 mA, Referenced to 25oC VDS = 650 V, VGS = 0 V - - 10 VDS = 520 V, VGS = 0 V,TC = 125oC - 86 - VGS = 20 V, VDS = 0 V - - 100 V V/oC A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 2.4 mA 3 - 5 V Static Drain to Source On Resistance - 133 150 m gFS Forward Transconductance VGS = 10 V, ID = 12 A VDS = 20 V, ID = 12 A - 22 - S Dynamic Characteristics - 2810 3737 pF - 91 121 pF - 0.77 - pF - 54 - pF VDS = 0 V to 400 V, VGS = 0 V - 361 - pF VDS = 380 V, ID = 12 A, VGS = 10 V - 72 94 nC - 15 - nC Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz Coss eff. Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance VDS = 100 V, VGS = 0 V, f = 1 MHz (Note 4) f = 1 MHz - 31 - nC - 0.69 - - 28 66 ns - 15 40 ns - 73 156 ns - 6 22 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 12 A, VGS = 10 V, Rg = 4.7 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 24 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 72 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12 A - - 1.2 V trr Reverse Recovery Time - 123 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 12 A, dIF/dt = 100 A/s - 597 - nC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 4.7 A, RG = 25 , Starting TJ = 25C. 3. ISD 12 A, di/dt 200 A/s, VDD 380 V, Starting TJ = 25C. 4. Essentially independent of operating temperature. (c)2015 Fairchild Semiconductor Corporation FCPF150N65FL1 Rev. 1.0 2 www.fairchildsemi.com FCPF150N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250s Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 10 o 150 C 10 o 25 C o -55 C *Notes: 1. 250s Pulse Test o 2. TC = 25 C 1 0.1 1 VDS, Drain-Source Voltage[V] 10 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.25 0.20 VGS = 10V 0.15 VGS = 20V o 10 150 C 1 o 25 C 0.1 0.01 *Notes: 1. VGS = 0V o 0.10 *Note: TC = 25 C 0 20 40 60 ID, Drain Current [A] 80 0.001 0.0 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 1000 Coss 100 1 0.1 0.1 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 10 10000 10 2. 250s Pulse Test Figure 6. Gate Charge Characteristics 100000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.30 RDS(ON) [], Drain-Source On-Resistance 3 *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 100 VDS, Drain-Source Voltage [V] (c)2015 Fairchild Semiconductor Corporation FCPF150N65FL1 Rev. 1.0 6 4 2 0 50 3 VDS = 130V VDS = 325V VDS = 520V 8 *Note: ID = 12A 0 16 32 48 64 Qg, Total Gate Charge [nC] 80 www.fairchildsemi.com FCPF150N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.5 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 12A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 100 25 10s 20 1ms ID, Drain Current [A] ID, Drain Current [A] 100s 10 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 o 1. TC = 25 C 15 10 5 o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 15 EOSS, [J] 12 9 6 3 0 0 100 200 300 400 500 600 VDS, Drain to Source Voltage [V] (c)2015 Fairchild Semiconductor Corporation FCPF150N65FL1 Rev. 1.0 700 4 www.fairchildsemi.com FCPF150N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET Typical Performance Characteristics (Continued) FCPF150N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve o ZJC(t), Thermal Response [ C/W] 10 1 0.5 0.2 0.1 PDM 0.1 0.05 t1 0.02 0.01 0.01 o Single pulse 1E-3 -5 10 (c)2015 Fairchild Semiconductor Corporation FCPF150N65FL1 Rev. 1.0 t2 *Notes: 1. ZJC(t) = 3.2 C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 -1 0 10 10 10 10 t1, Rectangular Pulse Duration [sec] 5 1 10 2 10 www.fairchildsemi.com FCPF150N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms (c)2015 Fairchild Semiconductor Corporation FCPF150N65FL1 Rev. 1.0 6 www.fairchildsemi.com FCPF150N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2015 Fairchild Semiconductor Corporation FCPF150N65FL1 Rev. 1.0 7 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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