DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST50; BST51; BST52 NPN Darlington transistors Product specification Supersedes data of 2001 Feb 20 2004 Dec 09 Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 FEATURES PINNING * High current (max. 0.5 A) PIN * Low voltage (max. 80 V) 1 emitter * Integrated diode and resistor. 2 collector 3 base DESCRIPTION APPLICATIONS * Industrial switching applications such as: - Print hammer - Solenoid - Relay and lamp driving. 2 3 DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complements: BST60, BST61 and BST62. MARKING 3 TYPE NUMBER 2 1 sym080 MARKING CODE BST50 AS1 BST51 AS2 BST52 AS3 1 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BST50 BST51 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads BST52 2004 Dec 09 2 VERSION SOT89 Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BST50 - 60 V BST51 - 80 V BST52 - 90 V BST50 - 45 V BST51 - 60 V BST52 - 80 V - 5 V collector-emitter voltage VBE = 0 V VEBO emitter-base voltage open collector IC collector current (DC) - 1 A ICM peak collector current - 2 A IB base current (DC) - 100 mA Ptot total power dissipation - 1.3 W Tj junction temperature - 150 C Tamb ambient temperature -65 +150 C Tstg storage temperature -65 +150 C Tamb 25 C; note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-a) thermal resistance from junction to ambient note 1 Rth(j-s) thermal resistance from junction to soldering point VALUE UNIT 96 K/W 16 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". 2004 Dec 09 3 Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICES PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector-emitter cut-off current BST50 VBE = 0 V; VCE = 45 V - - 50 nA BST51 VBE = 0 V; VCE = 60 V - - 50 nA BST52 VBE = 0 V; VCE = 80 V - - 50 nA IEBO emitter-base cut-off current IC = 0 A; VEB = 4 V - - 50 nA hFE DC current gain VCE = 10 V; note 1; (see Fig.2) IC = 150 mA 1000 - - IC = 500 mA 2000 - - IC = 500 mA; IB = 0.5 mA - - 1.3 V IC = 500 mA; IB = 0.5 mA; Tj = 150 C - - 1.3 V VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage IC = 500 mA; IB = 0.5 mA - - 1.9 V fT transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz - 200 - MHz - 400 - ns - 1500 - ns Switching times (between 10% and 90% levels); (see Fig.3) ton turn-on time toff turn-off time ICon = 500 mA; IBon = 0.5 mA; IBoff = -0.5 mA Note 1. Pulse test: tp 300 s; 0.02. 2004 Dec 09 4 Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 MGD838 5000 handbook, full pagewidth hFE 4000 3000 2000 1000 0 10-1 102 10 1 VCE = 10 V. Fig.2 DC current gain; typical values. VCC VBB ndbook, full pagewidth RB RC Vo (probe) oscilloscope 450 (probe) 450 R2 Vi DUT R1 MLB826 Vi = 10 V; T = 200 s; tp = 6 s; tr = tf 3 ns. R1 = 56 ; R2 = 10 k; RB = 10 k; RC = 18 . VBB = -1.8 V; VCC = 10.7 V. Oscilloscope: input impedance Zi = 50 . Fig.3 Test circuit for switching times. 2004 Dec 09 5 oscilloscope IC (mA) 103 Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Dec 09 REFERENCES IEC JEDEC JEITA TO-243 SC-62 6 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Dec 09 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA76 (c) Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp8 Date of release: 2004 Dec 09 Document order number: 9397 750 13877