DATA SH EET
Product specification
Supersedes data of 2001 Feb 20 2004 Dec 09
DISCRETE SEMICONDUCTORS
BST50; BST51; BST52
NPN Darlington transistors
b
ook, halfpage
M3D109
2004 Dec 09 2
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
FEATURES
•High current (max. 0.5 A)
•Low voltage (max. 80 V)
•Integrated diode and resistor.
APPLICATIONS
•Industrial switching applications such as:
– Print hammer
– Solenoid
– Relay and lamp driving.
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complements: BST60, BST61 and BST62.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BST50 AS1
BST51 AS2
BST52 AS3
PIN DESCRIPTION
1 emitter
2 collector
3 base
321 1
2
3
sym080
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BST50 SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads SOT89
BST51
BST52
2004 Dec 09 3
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BST50 −60 V
BST51 −80 V
BST52 −90 V
VCES collector-emitter voltage VBE =0V
BST50 −45 V
BST51 −60 V
BST52 −80 V
VEBO emitter-base voltage open collector −5V
ICcollector current (DC) −1A
ICM peak collector current −2A
IBbase current (DC) −100 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −1.3 W
Tjjunction temperature −150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 96 K/W
Rth(j-s) thermal resistance from junction to soldering point 16 K/W
2004 Dec 09 4
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp≤300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES collector-emitter cut-off current
BST50 VBE =0V; V
CE =45V −−50 nA
BST51 VBE =0V; V
CE =60V −−50 nA
BST52 VBE =0V; V
CE =80V −−50 nA
IEBO emitter-base cut-off current IC= 0 A; VEB =4V −−50 nA
hFE DC current gain VCE = 10 V; note 1; (see Fig.2)
IC= 150 mA 1000 −−
IC= 500 mA 2000 −−
VCEsat collector-emitter saturation
voltage IC= 500 mA; IB= 0.5 mA −−1.3 V
IC= 500 mA; IB= 0.5 mA;
Tj= 150 °C−−1.3 V
VBEsat base-emitter saturation voltage IC= 500 mA; IB= 0.5 mA −−1.9 V
fTtransition frequency IC= 500 mA; VCE =5V;
f = 100 MHz −200 −MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton turn-on time ICon = 500 mA; IBon = 0.5 mA;
IBoff =−0.5 mA −400 −ns
toff turn-off time −1500 −ns
2004 Dec 09 5
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
5000
1000
2000
3000
4000
MGD838
10−11IC (mA)
hFE
10 102103
VCE =10V.
Fig.3 Test circuit for switching times.
n
dbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
Vi
VCC
Vi= 10 V; T = 200 µs; tp=6µs; tr=t
f≤3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB=10kΩ; RC=18Ω.
VBB =−1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi=50Ω.
2004 Dec 09 6
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 99-09-13
04-08-03
wM
e1
e
EHE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
2004 Dec 09 7
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified
© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Contact information
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Printed in The Netherlands R75/05/pp8 Date of release: 2004 Dec 09 Document order number: 9397 750 13877
