Radar Pulsed Power Transistor
2.7-2.9GHz, 36V, 100µsec, 170W MAPR-002729-170M00
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Preliminary 1/2007
1
RoHS
Compliant
PRELIMINARY: Datasheets contain information regarding a product M/A-COM has under development. Performance is based on engineer-
ing tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment
to produce in volume is not guaranteed.
Features
190W, 53% efficiency, typical RF performance
36V, 24W nominal RF input drive
Designed for ATC radar applications
NPN silicon microwave power transistor
Common base, Class-C configuration
High efficiency inter-digitated geometry
Gold metallization system
Internal input and output pre-matching
Hermetic metal/ceramic package
OUTLINE DRAWING
MAXIMUM RATINGS
Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 27 A
Storage Temperature TSTG -65 to +200 °C
Junction Temperature TJ 200 °C
ELECTRICAL CHARACTERISTICS AT 25°C
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
BROADBAND TEST FIXTURE IMPEDANCE
F (MHz) Z IF (Ω) Z OF (Ω)
2700 5.1 – 5.1j 1.8 – 2.1j
2800 5.2 – 4.7j 1.8 – 1.8j
2900 5.3 – 4.3j 1.8 – 1.4j
Parameter Symbol Min Max Units Test Conditions
Collector-Emitter Breakdown
Voltage BVCES 65 - V IC=50mA
Collector-Emitter Leakage
Current ICES - 15 mA VCE=36V
Thermal Resistance RTH - 0.35 °C/W VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Power Output Pout 170 - Wpk VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Power Gain GP 8.5 - dB VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Collector Efficiency ηC 40 - % VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Input Return Loss RL 10 - dB VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Load Mismatch Stability VSWR-S - 1.5:1 - VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Load Mismatch Tolerance VSWR-T - 2:1 - VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Radar Pulsed Power Transistor
2.7-2.9GHz, 36V, 100µsec, 170W MAPR-002729-170M00
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Preliminary 1/2007
2
RoHS
Compliant
PRELIMINARY: Datasheets contain information regarding a product M/A-COM has under development. Performance is based on engineer-
ing tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment
to produce in volume is not guaranteed.
Out put P ower
170
180
190
200
210
220
2.7 2.8 2.9
Freq (GHz)
Pout ( W )
Gain
8.0
8.2
8.4
8.6
8.8
9.0
2.7 2.8 2.9
Freq (GHz)
Gain (dB)
Efficiency
40
45
50
55
60
2.7 2.8 2.9
Freq (GHz)
EF F ( %
)
Return Loss
-20
-15
-10
-5
0
2.7 2.8 2.9
Freq (GHz)
RL (dB)
Measured RF Performance
Radar Pulsed Power Transistor
2.7-2.9GHz, 36V, 100µsec, 170W MAPR-002729-170M00
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Preliminary 1/2007
3
RoHS
Compliant
PRELIMINARY: Datasheets contain information regarding a product M/A-COM has under development. Performance is based on engineer-
ing tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment
to produce in volume is not guaranteed.
Droid 6010.5
Dielectric Constant Er = 10.5
Dielectric Thickness h = 25mils
Radar Pulsed Power Transistor
2.7-2.9GHz, 36V, 100µsec, 170W MAPR-002729-170M00
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Preliminary 1/2007
4
RoHS
Compliant
PRELIMINARY: Datasheets contain information regarding a product M/A-COM has under development. Performance is based on engineer-
ing tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment
to produce in volume is not guaranteed.
