3875081 GE SOLID STATE - O1 18902 OD 7-35-25 G E SOLID STATE O1 DEG 3875081 0018902 5 {7 XO =| of WOKS Se IRFD112,113 FIELD EFFECT POWER TRANSISTOR 100, 60 VOLTS RDS(ON) = 0.82 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- o ness and rellability. This design has been optimized to give superior performance in most switching applications including: switching power . : supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear CASE STYLE 4-PIN DIP transfer characteristics makes it well suited for many linear DIMENSIONS ARE IN INCHES AND (MILLIMETERS) applications such as audio amplifiers and servo motors. Features ona Fae @ Polysilicon gate Improved stability and reliability fe0 245 (6 22} e No secondary breakdown Excellent ruggedness __ oe 4 : e Ultra-fast switching Independent of temperature =s __ Voltage controlled High transconductance . Gan Low input capacitance Reduced drive requirement sowueas itl] ois 0022 (0 56) t Excellent thermal stability Ease of paralleling ie + fore 4 015 (254) (380 maximum ratings (Ta = 25C) (unless otherwise specified) RATING SYMBOL IRFD112 IRFD113 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Rag = 1M VpGR 100 60 Volts Continuous Drain Current @ Ta = 26C" Ip 0.80 0.80 A @ Ta = 100C) . 0.54 0.54 A Pulsed Drain Current!?) IDM 6.4 6.4 A Gate-Source Voltage Vas +20 20 Volts Totat Power Dissipation @ Ta = 25C a) 1.2 1.2 Watts Derate Above 25C 9.6 9.6 mW Operating and Storage Junction Temperature Range Ty, Tsta -5 to 150 -5 to 150 C thermal characteristics Thermal Resistance, Junction to Ambient" Rega 105 105 C/W Maximum Lead Temperature for Soldering Purposes; %" from Case for 5 Seconds TL 300 300 C (1) Device mounted to vertical pc board in free air with drain lead soldered to 0.20 in? minimum copper run area. (2) Repetitive Rating: Pulse width Ilmited by max. junction temperature. 235G E SOLID STATE Oh de fsa7soaa co1asoa 7? f 7-25-25 electrical characteristics (T, = 25C) (unless otherwise specified) | CHARACTERISTIC [symB0L| MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRFD112 BVpss 100 _ _ Volts (Vas = OV, Ip = 250 A) IRFD113 60 Zero Gate Voltage Drain Current loss _ (Vpg = Max Rating, Vag = OV, Ta = 25C) _ _ 250 LA (Vps = Max Rating, x 0.8, Vas = OV, Ta = 125C) _ oo 1000 Gate-Source Leakage Current on characteristics* Gate Threshold Voltage Ta = 25C | VascTH) 2.0 _ 4.0 Volts (Vps = Vas: Ip = 250 #A) On-State Drain Current. | 0.8 _ _ A (Vas = 10V, Vps = 10V) D(ON) . Static Drain-Source On-State Resistance (Vag = 10V, Ip = 0.8A) Rps(on) _ 0.60 0.80 Ohms Forward Transconductance (Vpg = 10V, Ip = 0.84) Ofs 0.56 0.75 mhos dynamic characteristics input Capacitance Vas = 0V Ciss -_- 145 200 pF Output Capacitance Vos = 25V Coss _ 65 100 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 20 25 pF switching characteristics* Turn-on Delay Time Vos = 30V ta(on) _ 15 _ ns Rise Time Ip = 0.8A, Vag = 15V tr 15 ns Turn-off Delay Time Raen = 500, Reg = 12.59. ta(oft) _ 30 _ ns Fall Time (Res (Equiv,) = 100) tf _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is - _ 0.8 A Pulsed Source Current Ism _ _ 6.4 A Diode Forward Voltage _ (Ta = 25C, Vag = OV, Ig = 0.8) so 08 2.0 Volts Reverse Recovery Time ter _ 90 _ ns (Ig = 1.0A, dis/dt = 100A/us, Ta = 125C) Qar _ 0.2 _ uc *Pulse Test: Pulse width < 300 us, duty cycle = 2% 10 24 25y8 22 CONDITIONS: R CONDITIONS: Ip = 0.8 A. Vg = 10V 100, DS(ON D7 0.8 A. Vas _ a VasyTh) CONDITIONS: Ip = 260nA, Ving = Vas a # te < & 3 w 1 ms z 16 'OSION) 3 , = $ 9 14 z 10ms B12 5 > 49 3 k 2 g Z 01 100ms $ 08 Vest 3 R06 TION IN THIS AREA iRFDI2 oS MAY BE LIMITED BY Ragiany IRFO113, 04 SINGLE PULSE 02 =55% oy Lae be ; Tot 10... 100 100 =) 0 40, 80 "120 160 Vpgs ORAIN-SOURCE VOLTAGE {VOLTS} T,, JUNCTION TEMPERATURE (C) MAXIMUM SAFE OPERATING AREA TYPICAL NORMALIZED Rogion; AND Vasitn) VS. TEMP. 236